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Вітаємо Михайла Захаровича Згуровського із 75-річчям KPI4U-1 чт, 01/30/2025 - 13:00

Infineon Technologies AG introduces new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER family. The devices are designed for the latest IGBT and SiC technologies.  Furthermore, they support Infineon’s new HybridPACK Drive G2 Fusion module, the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies. The pre-configured third-generation EiceDRIVER products, 1EDI302xAS (IGBT) and 1EDI303xAS (SiC/ Fusion), are AEC-qualified and ISO 26262-compliant, ideal for traction inverters in cost-effective and high-performant xEV platforms.

The devices 1EDI3025AS, 1EDI3026AS and 1EDI3035AS provide a strong output stage of 20 A and drive high-performance inverters of all power classes up to over 300 kW. The variants 1EDI3028AS and 1EDI3038AS with an output stage of 15 A are ideal for use in entry-level battery electric vehicle (BEV) and plug-in hybrid electric vehicle (PHEV) inverters as well as for the excitation circuit of externally excited synchronous machines (EESM). In addition, the devices are equipped with the new tunable soft-off feature, which provides excellent short-circuit performance to support the latest SiC and IGBT technologies.

Various monitoring functions, such as an integrated self-test for desaturation protection (DESAT) and overcurrent protection (OCP), improve the handling of latent system errors while the new primary and secondary safe-state interface enables versatile system safety concepts. In addition, a continuously sampling 12-bit delta-sigma ADC with integrated current source can read the voltage directly from temperature measurement diodes or an NTC. The gate drivers also provide reinforced insulation according to VDE 0884-17:2021-10 to enable safe isolation following standardized qualification and production testing procedures. Furthermore, the compact package (PG-DSO-20) and excellent compatibility with the latest power stage technologies help customers to drive system integration and reduce design cycle times.

Availability

The new EiceDRIVER isolated gate driver ICs for EV (1EDI3025AS, 1EDI3026AS, 1EDI3028AS, 1EDI3035AS, 1EDI3038AS) can be ordered now and samples are available. More information is available at www.infineon.com/eicedriver-xev.

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Semiconductors are the backbone of modern electronics, enabling faster, smaller, and more power-efficient devices. As India moves towards becoming a global hub for semiconductor manufacturing and design, the demand for cutting-edge chip technology is rising. The integration of advanced fabrication techniques, AI-driven chip design, and the push for indigenous semiconductor production are set to transform India’s electronics ecosystem.

The Need for Faster and Smaller Electronics

The electronics industry is driven by the demand for compact and high-performance devices, including smartphones, wearables, automotive electronics, and IoT devices. Key trends pushing the semiconductor industry forward include:

• Moore’s Law Advancements: Continuous scaling down of transistor sizes following the path of Extreme Ultraviolet Lithography (EUVL) for enhanced patterning precision and increased transistor density.
• AI and Edge Computing: Implementation of neuromorphic computing architectures using emerging materials like Resistive RAM (ReRAM) and Phase-Change Memory (PCM).
• 5G and Beyond: Deployment of compound semiconductors such as Gallium Nitride (GaN) and Indium Phosphide (InP) for high-frequency, high-power RF applications.
• Energy Efficiency: Adoption of tunnel field-effect transistors (TFETs) and spintronic devices for ultra-low-power computing.

Key Semiconductor Technologies Driving Miniaturization 1. Advanced Node Process Technologies

With the shift to 5nm, 3nm, and upcoming 2nm process nodes, semiconductor manufacturers are pushing the limits of physics. These smaller nodes provide:

• Increased effective channel mobility by integrating high-k metal gate (HKMG) stacks and strained silicon engineering.
• Improved electrostatic control over transistors through stacked nanosheet transistors.
• Higher integration density through Self-Aligned Quadruple Patterning (SAQP).

2. FinFET and GAAFET Transistor Architectures

• FinFET (Fin Field-Effect Transistor) technology dominates sub-10nm nodes, offering superior gate control through multi-gate designs.
• GAAFET (Gate-All-Around FET) represents the next evolution, transitioning towards nanosheet transistors, reducing leakage currents and enhancing threshold voltage tuning.

3. 3D Packaging and Chiplet Architecture

• 3D stacking (TSV – Through-Silicon Via) allows for vertical integration, minimizing signal propagation delays and interconnect parasitics.
• Chiplet-based designs using advanced heterogeneous integration enable diverse functional blocks to be assembled with high-bandwidth interconnects such as UCIe (Universal Chiplet Interconnect Express).

India’s Semiconductor Roadmap

India is aggressively pushing for semiconductor self-sufficiency through initiatives like Semicon India Program and partnerships with global leaders. The focus areas include:

• Domestic Fab Development: India is investing in semiconductor fabs with partnerships involving TSMC, Intel, and GlobalFoundries.
• Design and IP Development: Indian startups and research institutions are working on AI-powered EDA (Electronic Design Automation) tools leveraging machine learning for physical design optimization.
• Material Advancements: R&D in wide-bandgap semiconductors like SiC (Silicon Carbide) and GaN (Gallium Nitride) for high-efficiency power electronics.

Key Players and Initiatives in India

• ISMC Analog Fab: A proposed semiconductor fab with Israeli collaboration focusing on mixed-signal and RF chip manufacturing.
• Vedanta-Foxconn JV: Focused on setting up a 28nm technology node semiconductor fab in India.
• Tata Electronics: Exploring advanced semiconductor packaging and system-in-package (SiP) solutions.
• India Semiconductor Mission (ISM): A government-backed initiative to accelerate semiconductor fabrication, design, and advanced packaging capabilities.

Challenges and Future Outlook

While India is making significant strides in semiconductor manufacturing, challenges remain:

• Supply Chain Dependencies: Reliance on foreign suppliers for high-purity silicon wafers and photolithography tools.
• Skilled Workforce: Need for specialized talent in quantum computing, cryogenic electronics, and advanced packaging.
• High CAPEX Requirements: Semiconductor fabs require multi-billion-dollar investments with long ROI cycles.

Despite these challenges, India’s semiconductor sector is set to grow rapidly with government support, strategic partnerships, and technological innovations. The move towards faster, smaller, and more efficient semiconductors will drive India’s electronics industry forward, making the country a key player in the global semiconductor race.

Conclusion

The evolution of semiconductors is enabling smaller, faster, and more efficient electronics, shaping the future of computing, connectivity, and automation. With India’s push towards self-reliance in semiconductor manufacturing and the adoption of next-gen technologies like AI-driven chip design, 3D stacked transistors, and advanced node fabrication, the country is poised to become a global semiconductor powerhouse. As investments grow and expertise expands, India’s role in the semiconductor revolution will only strengthen, paving the way for a digitally empowered future.

The post Semiconductors for Faster and Smaller Electronics in India appeared first on ELE Times.

Amtech Electrocircuits, a leading provider of manufacturing solutions, is proud to present insights into the key trends driving innovation and growth in 2025. From advanced automation and sustainability to AI integration and supply chain diversification, these trends are setting the stage for the next era of manufacturing excellence.

“These emerging trends align closely with our mission to deliver cutting-edge solutions that enhance efficiency, sustainability, and resilience across the electronics manufacturing industry,” said Jay Patel, CEO at Amtech. “Amtech is here to help our partners seize new opportunities and drive success in 2025 and beyond.”

Top Trends to Watch in 2025:

1. AI and Machine Learning Integration: Transforming processes like predictive maintenance, automated quality control, and production optimization, AI is enhancing efficiency and reducing downtime across the industry.
2. Advanced Automation and Robotics: Collaborative robots (cobots) and lights-out manufacturing are revolutionizing production by enabling autonomous, high-throughput operations with minimal human intervention.
3. Reshoring and Regionalization: Companies are prioritizing local manufacturing to mitigate global uncertainties and build resilient supply chains with faster lead times.
4. Sustainability and Circular Economy: Greener practices, energy efficiency, and resource recycling are driving the shift toward a circular economy, ensuring environmental and economic benefits.
5. Smart Manufacturing and IoT: Real-time data from interconnected devices in smart factories is powering predictive analytics and better decision-making, elevating productivity and quality.
6. Additive Manufacturing (3D Printing): Moving beyond prototyping, 3D printing is enabling the production of complex components with reduced waste, particularly in high-value sectors like aerospace and medical devices.
7. High-Mix, Low-Volume Production: Flexible production systems are meeting the growing demand for customized solutions without compromising efficiency or quality.
8. Enhanced Cybersecurity Measures: With connected systems comes the need for robust cybersecurity to protect sensitive data and ensure operational integrity.
9. Workforce Transformation: Upskilling employees to work alongside advanced technologies and addressing labor shortages through automation are reshaping the manufacturing workforce.
10. Global Supply Chain Diversification: Exploring alternative sourcing strategies and partnerships is critical to building supply chain resilience and agility.

Amtech is dedicated to supporting its customers as they navigate these trends and transform their operations. With innovative solutions tailored to high-mix, low-volume production, sustainability initiatives, and smart manufacturing technologies, Amtech helps businesses embrace change and position themselves as industry leaders.

The post Amtech Shares Key Trends Shaping the Future of Electronics Manufacturing in 2025 appeared first on ELE Times.

Right before I packed up the device to get it mailed out, a fault showed up in the hours section where one of the hours nixie was displaying a 0 and a 6 at the same time, ended up doing last minute debugging, reinforcing the frame supporting the components, adjusted the wires on the 5vdc power rail to prevent shorts, etc. Mailed the device out yesterday, and am waiting on bated breath that the thing shows up in Hawaii in working order. Fingers crossed! At any rate, based on some questions on my original post, some people wanted the schematics to this clock. I tried to scan the schematic as an image and will post it here for reference. Note that the microcontroller came preprogrammed and I don’t have the source code. The most important thing is the BCD decoder and nixie drivers. You can use any generic MPU or controller you want. In this implementation, the only inputs to the BCDs are the serial clock (SCK), receive clock (RCK), and serial data (SI) for each hour and minutes display. Serial clear (SCLR) are tied hi to 5v rail, and the output enable (G) is tied low to ground, basically always keeping the outputs enabled to the nixie driver. There are many many things you can do with a 8bit BCD; a nixie clock is one of those things. For this implementation, you’d just have to write a program for your favorite controller (arduino, esp32, etc) to provide the SCK, RCK, and SI signals (as per the timing diagram outlined in the HC595 data sheet) for each hours, minutes, and seconds of the nixie display. I also posted another picture of other clock kits I bought from AliExpress. I can’t stop buying shit from that place. It’s like a drug lol. With that said, I really miss the clock I sent off to my grandpa, and I kinda want one for myself. So much so, that I’m planning to buy another kit from fecking AliExpress and give this another go to see if I can make this one better, or it’s still going to be ugly haha submitted by /u/Asuntofantunatu [link] [comments]

After the release of DeepSeek’s R1, a reasoning LLM that matches the performance of OpenAI’s latest o1 model, trade media is abuzz with speculations about the future of artificial intelligence (AI). Has the AI bubble burst? Is it the end of Nvidia’s spectacular AI ride?

EE Time’s Sally Ward-Foxton takes a closer look at the engineering-centric aspects of this talk of the town, explaining how DeepSeek tinkered with AI models as well as interconnect bandwidth and memory footprint. She also provides a detailed account of Nvidia’s chips utilized in this AI head-turner and what it means for Nvidia’s future.

Read the full story at EDN’s sister publication, EE Times.

 

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The post DeepSeek’s AI stunner and the future of Nvidia appeared first on EDN.

BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has filed three US patent applications (provisional patents) for next-generation high-power tunable GaN lasers, and published its results in a technical paper presented at SPIE Photonics West 2025 in San Francisco, CA, USA...

submitted by /u/Ok-Violinist-765 [link] [comments]

• 1st PPA in France for STMicroelectronics, aiming at 100% renewable sourcing by 2027
• Power comes from 2 recent wind and solar farms of 75 MW operated by TotalEnergies

TotalEnergies and STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, have signed a physical Power Purchase Agreement to supply renewable electricity to STMicroelectronics sites in France. This 15-year contract, started in January 2025, represents an overall volume of 1.5 TWh.

TotalEnergies will provide STMicroelectronics with the renewable power (including the guarantee of origin) produced by two recent wind and solar farms of 75 MW operated by TotalEnergies. This power comes with structuration services to transform intermittent production in a constant volume (“baseload”) of green electricity. It’s the first time in France that such a 15-year contract is provided. The positive impact of the wind and solar projects on the environment and on the communities was a key success factor in the signing of the deal. 

“We are delighted to sign this agreement with STMicroelectronics, which demonstrates our ability to provide long-term and innovative clean firm power solutions tailored to our customers’ needs,” said Sophie Chevalier, Senior Vice President Flexible Power & Integration at TotalEnergies. “TotalEnergies aims to be a preferred partner to support tech industry players towards their decarbonization efforts, and this agreement showcases our commitment and capabilities.” 

“This first PPA in France marks yet another important step towards ST’s goal of becoming carbon neutral in its operations (Scope 1 and 2 emissions, and partially scope 3) by 2027, including the sourcing of 100% renewable energy by 2027,” said Geoff West, EVP and Chief Procurement Officer at STMicroelectronics. “PPAs will play a major role in our transition, and we have already signed several to support ST’s operations in Italy and Malaysia. Starting in 2025, this PPA with TotalEnergies will provide a significant level of renewable energy for ST’s operations in France, which includes R&D, design, sales and marketing and large-volume chip manufacturing.”

TotalEnergies and electricity

As part of its ambition to get to net zero by 2050, TotalEnergies is building a world class cost-competitive portfolio combining renewables (solar, onshore and offshore wind) and flexible assets (CCGT, storage) to deliver clean firm power to its customers. By mid-2024, TotalEnergies’ gross renewable electricity generation installed capacity reached 24 GW. TotalEnergies will continue to expand this business to reach 35 GW in 2025 and more than 100 TWh of net electricity production by 2030.

The post Renewable Power: TotalEnergies Will Supply 1.5 TWh to STMicroelectronics in France over 15 Years appeared first on ELE Times.

Atomic layer deposition (ALD) equipment provider and materials science company Forge Nano Inc of Thornton, CO, USA has completed its new 2000ft2 semiconductor cleanroom, which enables it to manufacture multiple commercial TEPHRA ALD cluster tools to accommodate growing demand from the semiconductor market...

In honor of workbench Wednesday --- here is my home lab submitted by /u/Horror_Baseball_5987 [link] [comments]

submitted by /u/Traditional_Jury [link] [comments]

Infineon Technologies AG of Munich, Germany says that its new CoolSiC Automotive MOSFET 1200V has been selected by Germany-based international automotive supplier FORVIA HELLA for its next-generation 800V DC–DC charging solution...

Infineon Technologies AG of Munich, Germany says that its new CoolSiC Automotive MOSFET 1200V has been selected by Germany-based international automotive supplier FORVIA HELLA for its next-generation 800V DC–DC charging solution...

Quantum Science Ltd of Daresbury, Warrington, UK — which is developing and commercializing INFIQ infrared quantum dot (QD) nanomaterials and technologies for infrared imaging and sensing markets — is expanding into a new manufacturing facility as it prepares for upcoming growth in the short-wave infrared (SWIR) imaging and sensing markets...

Quantum Science Ltd of Daresbury, Warrington, UK — which is developing and commercializing INFIQ infrared quantum dot (QD) nanomaterials and technologies for infrared imaging and sensing markets — is expanding into a new manufacturing facility as it prepares for upcoming growth in the short-wave infrared (SWIR) imaging and sensing markets...

This design idea (DI) takes an unusual path to a power-handling DAC by merging an upside-down LM337 regulator with a simple (just one generic chip) PWM circuit to make a 20-V, 1-A current source. It’s suitable for magnet driving, battery charging, and other applications that might benefit from an agile and inexpensive computer-controlled current source. It profits from the accurate internal voltage reference, overload, and thermal protection features of that time proven and famous Bob Pease masterpiece! 

Wow the engineering world with your unique design: Design Ideas Submission Guide

Full throttle (PWM duty factor = 1) current output accuracy is entirely determined by R4’s precision and the ±2% (guaranteed, typically lots better) accuracy of the LM337 internal reference. It’s thus independent of the (sometimes dodgy) precision of logic supplies as basic PWM DACs often are not.

Figure 1 shows the circuit.

Figure 1 LM337 mates with a generic hex inverter to make an inexpensive 1-A PWM current source. (* = 1% metal film)
Iout = 1.07(DF – 0.07), Iout > 0

ACMOS inverters U1b through U1e accept a 10 kHz PWM signal to generate a -50 mV to +1.32 V “ADJ” control signal for the U2 current regulator proportional to the PWM duty factor (DF). Of course, other PWM frequencies and resolutions can be accommodated with the suitable scaling of C1 and C2. See the “K” factor arithmetic below.

DF = 0 drives ADJ > 1.25 V and causes U2 to output the 337’s minimum current (about 5 mA) as shown in Figure 1’s caption.

Iout = 1.07(DF – 0.07)

The 7% zero offset was put in to insure that DF = 0 will solidly shut off U2 despite any possible mismatch between its internal reference and the +5 V rail. It’s always struck me as strange that a negative regulator like the 337 sometimes needs a positive control signal, but in this case it does.

U1a generates an inverse of the PWM signal, providing active ripple cancellation as described in “Cancel PWM DAC ripple with analog subtraction.” Since ripple filter C1 and C2 capacitors are shown sized for 8 bits and a 10-kHz PWM frequency, for this scheme to work properly with different frequency and resolution, the capacitances will need to be multiplied by a factor K:

K = 2(N – 8) (10kHz/Fpwm)
N = bits of PWM resolution
Fpwm = PWM frequency

If more current capability is wanted, the LM337 is rated at 1.5 A. That can be had by simply substituting a heavier-duty power adapter and making R4 = 0.87 ohms. Getting even higher than that limit, however, would require paralleling multiple 337s, each with its own R4 to ensure equal load sharing.

Finally, a word about heat. U2 should be adequately heatsunk as dictated by heat dissipation equal to output current multiplied by the (24 V – Vout) differential.  Up to double-digit wattage is possible, so don’t skimp in the heatsink area. The 337s go into automatic thermal shutdown at junction temperatures above 150oC so U2 will never cook itself. But make sure it will pass the wet-forefinger-sizzle “spit test” anyway so it won’t shut off sometime when you least expect (or want) it to!

Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

 Related Content

• 0 V to -10 V, 1.5 A LM337 PWM power DAC
• Classic 3-leg adjustable regulators have a shunt mode? Who knew?
• Cancel PWM DAC ripple with analog subtraction
• Cancel PWM DAC ripple with analog subtraction—revisited
• Cancel PWM DAC ripple with analog subtraction but no inverter
• Fast-settling synchronous-PWM-DAC filter has almost no ripple

The post 1-A, 20-V, PWM-controlled current source appeared first on EDN.

Finally bought a house with space for a big workbench. Modeled this up in fusion 360 and built it this past weekend. A big step up from my old set up. submitted by /u/Mclevius-Donaldson [link] [comments]

The Internet of Things (IoT) has transformed industries by connecting billions of devices worldwide. From smart homes and industrial automation to healthcare and smart cities, IoT applications rely on robust wireless technologies for seamless communication. As IoT continues to expand, selecting the right wireless technology is crucial for optimizing performance, range, power consumption, and security. This article explores the latest and most effective IoT wireless technologies in 2025, helping businesses and developers make informed decisions.

1. Low Power Wide Area Networks (LPWANs)

LPWAN technologies are ideal for long-range, low-power IoT applications. These networks support devices that need to send small amounts of data over vast distances while consuming minimal power. Key LPWAN technologies include:

LoRa (Long Range)

LoRa operates in unlicensed spectrum bands and is widely used in smart cities, agriculture, and industrial applications. The latest advancements in LoRaWAN (LoRa Wide Area Network) include:

• Higher data rates through improved modulation schemes.
• Enhanced security with end-to-end encryption and authentication.
• Better network scalability supporting millions of connected devices.

NB-IoT (Narrowband IoT)

NB-IoT is a cellular-based LPWAN technology designed for applications requiring reliable, low-power, and cost-effective connectivity. Recent upgrades include:

• Improved indoor coverage, making it ideal for smart meters and asset tracking.
• Lower power consumption, enabling battery life of up to 10 years.
• Wider adoption in 5G networks for massive IoT deployments.

Sigfox

Sigfox is another LPWAN technology focused on low-cost, low-energy IoT communications. The latest enhancements include:

• Ultra-low power operation, extending device lifespan.
• Improved downlink capabilities, enabling bidirectional communication.
• Global network expansion, increasing its availability in new regions.

2. 5G for IoT

5G technology is revolutionizing IoT by offering high-speed, low-latency connectivity. It is particularly beneficial for applications requiring real-time data processing, such as autonomous vehicles, smart factories, and remote healthcare.

Key Benefits of 5G for IoT:

• Ultra-reliable low-latency communication (URLLC) for mission-critical applications.
• Massive Machine-Type Communications (mMTC) for large-scale IoT networks.
• Network slicing, allowing dedicated virtual networks for specific IoT applications.

As 5G infrastructure expands, its integration with AI and edge computing will further enhance IoT capabilities.

3. Wi-Fi 6 and Wi-Fi 7

Wi-Fi continues to be a dominant wireless technology for IoT in homes, businesses, and industrial environments. The introduction of Wi-Fi 6 (802.11ax) and Wi-Fi 7 (802.11be) brings significant improvements:

Wi-Fi 6 Features:

• Higher speeds and capacity, supporting multiple IoT devices simultaneously.
• Lower latency, improving performance in real-time applications.
• Better power efficiency, extending battery life for IoT sensors.

Wi-Fi 7 Advancements:

• Multi-link operation (MLO), enhancing reliability and reducing congestion.
• 320 MHz channel width, offering faster data rates.
• Optimized IoT connectivity, ensuring seamless device communication in dense environments.

4. Bluetooth Low Energy (BLE) and Bluetooth 5.3

Bluetooth remains a leading short-range IoT communication technology. The latest Bluetooth 5.3 update brings:

• Improved energy efficiency, extending battery life for wearables and sensors.
• Enhanced security features, protecting IoT devices from cyber threats.
• Better connection stability, reducing interference in crowded environments.

BLE is widely used in healthcare, smart home devices, and asset tracking due to its low power consumption and compatibility with smartphones.

5. Zigbee and Z-Wave Zigbee

Zigbee is a low-power mesh networking protocol commonly used in smart home and industrial IoT applications. Recent improvements include:

• Faster data transmission, increasing responsiveness in IoT ecosystems.
• Interoperability with Matter, a unified IoT standard for smart devices.
• Enhanced security, protecting connected devices from hacking.

Z-Wave

Z-Wave operates in the sub-1GHz frequency band, reducing interference with Wi-Fi networks. The latest advancements include:

• Longer range, improving connectivity for smart home automation.
• Stronger security protocols, preventing unauthorized access.
• Expanded device support, integrating with more IoT platforms.

6. Ultra-Wideband (UWB)

UWB is gaining traction for high-precision location tracking in IoT applications. Key advantages include:

• Centimeter-level accuracy, making it ideal for asset tracking and secure access control.
• High data transmission rates, improving real-time communication.
• Low power consumption, ensuring extended device life.

Choosing the Right Wireless Technology for IoT

Selecting the best IoT wireless technology depends on several factors:

• Range: LPWAN for long-range, Bluetooth/Zigbee for short-range.
• Power Consumption: LPWAN and BLE for energy efficiency.
• Data Rate: 5G and Wi-Fi 7 for high-speed applications.
• Security: Zigbee, Z-Wave, and Bluetooth 5.3 for enhanced protection.

Conclusion

As IoT adoption accelerates, the demand for reliable and efficient wireless connectivity continues to grow. From LPWAN and 5G to Wi-Fi 7 and UWB, the latest IoT wireless technologies offer tailored solutions for various applications. Businesses and developers must stay updated with these advancements to optimize their IoT deployments, ensuring seamless connectivity, enhanced security, and improved performance.

By leveraging the right wireless technology, organizations can unlock the full potential of IoT, driving innovation across industries and creating smarter, more connected ecosystems.

The post The Latest IoT Wireless Technologies: Enabling the Future of Connectivity appeared first on ELE Times.

Другий візит Надзвичайного і Повноважного Посла Японії в Україні Масаші Накаґоме kpi ср, 01/29/2025 - 13:36