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The new power MOSFET offers low ON-resistances combined with a compact 2.0 mm × 2.0 mm package.

This project is a compact evaluation PCB designed for the nPM1100 Power Management IC by Nordic Semiconductor. The board provides the essential circuitry to evaluate the core features of the PMIC in a minimal footprint while exposing all IO pins for external interfacing. PCB dimensions: 22 mm × 16 mm PCB layers: 2 All components: Surface-mounted on the top layer Header pitch: Standard 2.54 mm (0.1") More info on GitHub https://github.com/P-rth/LIPL-Assessment/blob/main/ProblemStatemet2%2Freadme.md submitted by /u/antihumanracerobot [link] [comments]

It's not finished yet, but it will be soon. Only one PCB is left once I finish that and do the wiring, it'll be done. submitted by /u/Careful-Rich9823 [link] [comments]

Today’s car buyers, whether purchasing premium or economy models, expect to charge multiple devices simultaneously through in-vehicle USB ports. To meet this demand, automakers are replacing legacy USB Type-A ports with multiple USB Type-C ports that support the latest USB power delivery (PD) standards. These standards enable significantly higher power levels—up to 48 V and 240 W—suitable for fast-charging laptops, tablets, and phones.

USB PD controllers operate alongside internal or external DC/DC converters, which add their own thermal stress to the system. This challenge becomes even more critical in automotive, industrial, and other space-constrained designs where airflow is minimal and ambient temperatures are high. If left unmanaged, excessive heat can damage or degrade system reliability. Elevated temperatures accelerate the aging of semiconductors and passive components, cause solder joint fatigue, and, in the worst cases, can lead to printed circuit board (PCB) delamination or thermal runaway. These risks make thermal management a priority in system-level USB PD designs, especially when long-term reliability or safety are requirements. In this power tip, I’ll explore different methods to manage heat and improve system reliability when implementing automotive USB PD solutions.

A typical 12-V battery automotive system needs these components to implement a USB PD charging port:

• A DC/DC converter. The converter steps the 12-V battery voltage up to the desired USB output (commonly 5 V to 20 V, up to 60 W, or even 48 V and 240 W with the latest USB PD specifications).
• A controller that supports USB PD. This controller is at the heart of modern high-power charging systems, negotiating power roles and voltage levels with connected devices. The TPS26744E-Q1 from Texas Instruments (TI) is an example of a dual-port automotive controller that manages USB PD profiles and controls the associated DC/DC converter.

Challenges when designing high-power USB PD from a 12-V rail include:

• Wide voltage variations: Both input (car battery) and output (USB Type-C port and connected load) voltages vary significantly, requiring a reliable and flexible power architecture.
• High current requirements: Delivering 100 W from a 12-V input can require more than 10 A of input current, necessitating large inductors, low drain-to-source on-resistance MOSFETs, and careful PCB layout to manage losses on the power components.
• Thermal bottlenecks: Most designs use buck-boost converters with four external MOSFETs, which can introduce substantial thermal stress under high load conditions, especially at low input voltages and high output power.

The shift to 48-V systems

The automotive industry is transitioning toward 48-V power architectures, which simplifies USB PD designs and improves thermal efficiency. With a higher input voltage, a buck-only topology is sufficient, replacing the more complex buck-boost design. You’ll need fewer external components (no four-FET bridge, and with significantly reduced inductor size and current rating requirements).

For example, TI’s LM72880-Q1 is an integrated automotive-grade buck converter suitable for 48-V input USB PD applications. Figure 1 shows two USB PD DC/DC converters: a buck-boost converter off a 12-V battery to the left and a buck converter only off a 48-V battery to the right. You can see that the total solution size and components are much lower for the 48-V based system. The 48V-based solution achieves a 58% reduction in PCB area, from 1.75 in² to 0.74 in².

Figure 1 Buck-boost topology for 12-V architecture versus a buck-only topology for the 48-V architecture. Source: Texas Instruments

Lower switching frequencies can help

Switching frequency has a direct impact on power loss. Higher frequencies reduce the size of passive components but increase switching losses in MOSFETs; lower frequencies reduce switching losses but increase inductor ripple, and may require larger output filters.

Figure 2 compares the same board working at different switching frequencies, with 400 kHz to the left and 200 kHz to the right.

Figure 2 Thermal images of the same board working at a switching frequency of 400 kHz (left) versus 200kHz (right). Source: Texas Instruments

The thermal test comparing a 400 kHz versus 200 kHz switching frequency (both at a 54-V input, 5-A output, and with fan cooling) shows that lowering the frequency reduces converter temperature by 18°C. The inductor temperature does rise slightly from 60°C to 63°C, indicating the need for output filtering to balance the heat distribution.

Thicker copper, more PCB layers

PCB design plays a crucial role in thermal management. Increasing copper thickness and adding more layers can significantly reduce temperature rise, especially when fan cooling is not available.

Figure 3 shows thermal images from two similarly sized boards. The board on the left is four layers, each with 1 oz of copper. The board on the right is six layers, with 2 oz of copper for the top and bottom layers and 1 oz of copper for the inner layers.

Figure 3 Thermal images of two PCBs: one with four layers with 1 oz of copper each (left) and one with six layers with 2 oz outer layers and 1 oz inner layers (right). Source: Texas Instruments

Both boards operate at a 48-V input and a 20-V output with 400 kHz switching. The board on the right carries 5 A versus 4.25 A for the board on the left, yet experiences 50% less temperature rise from improved heat dissipation. This underscores the importance of investing in copper-heavy PCB stacks for thermally demanding automotive applications.

Thermal foldback

Traditional protection methods often rely on thermal shutdown, completely disabling the system when a temperature threshold is crossed. While thermal shutdown protects hardware, this approach is abrupt and disruptive. In applications where continuous operation is preferable to complete shutdown—such as in automotive infotainment, industrial USB charging, or consumer docking stations—thermal shutdown simply doesn’t provide a good user experience.

USB PD controllers today, including those from TI, support firmware-configurable thermal foldback, a more sophisticated, dynamic thermal response system that reduces power delivery as temperature rises. Instead of cutting power entirely, the controller steps down the VBUS output power, allowing the system to cool while still maintaining basic functionality. It’s a “fail-soft” approach that maintains safety and system uptime.

TI’s USB PD controllers monitor system temperature through an external negative temperature coefficient thermistor connected to an analog-to-digital converter input. The firmware evaluates this voltage to assess temperature conditions. As the temperature rises, the system progresses through configurable thermal phases, each with increasing levels of power reduction.

In Figure 4, thermal foldback is divided into three thermal phases, each representing a higher level of thermal severity:

• Phase 1: Mild temperature rise. Power is reduced slightly to reduce thermal buildup.
• Phase 2: Intermediate temperature. Power delivery is throttled further to stabilize the system.
• Phase 3: High-temperature alert. Power is significantly reduced or disabled to avoid dangerous overheating.

Figure 4 Thermal thresholds rising and falling with three main phases of thermal foldback. Source: Texas Instruments

Each phase is defined by two voltage thresholds: a rising (Vth_R) and falling (Vth_F) threshold, creating hysteresis to prevent rapid toggling between phases when temperatures hover around a transition point.

In response to phase transitions, the USB PD controller will renegotiate the USB PD contract with the connected sink device. The maximum power allowed in each phase is configurable, offering precise control. For example, if the maximum port power is 100 W, thermal foldback could reduce the power to 60 W when entering phase 1, 27 W in phase 2, and 7.5 W in phase 3.

Thermal foldback is no longer a luxury feature; it’s a necessity in high-power USB PD designs. With firmware-configurable behavior, TI’s USB PD controllers give engineers the flexibility to maintain safe, efficient operation under thermal stress without sacrificing usability or system availability. By stepping power down intelligently instead of shutting off entirely, thermal foldback improves product reliability, extends component life, and delivers a better end-user experience in demanding environments.

USB PD thermal management

Thermal management is an important design consideration in automotive USB PD applications. By leveraging higher-voltage systems, optimizing switching frequency, and investing in PCB design, you can significantly reduce heat-related stress and improve overall reliability. TI offers a range of automotive-grade USB PD controllers and DC/DC converters, such as the TPS26744E-Q1 and LM72880-Q1, to help you design compact, efficient, and thermally reliable USB Type-C charging solutions.

Josh Mandelcorn has been at Texas Instrument’s Power Design Services team for two decades focused on designing power solutions for automotive and communications / enterprise applications. He has designed high-current multiphase converters to power core and memory rails of processors handling large rapid load changes with stringent voltage under / overshoot requirements. He previously designed off-line AC to DC converters in the 250W to 2 kW range with a focus on emissions compliance. He is listed as either an author or co-author on 17 US patents related to power conversion. He received a BSEE degree from the Carnegie-Mellon University, Pittsburgh, Pennsylvania.

Seong Kim is an Applications Engineer at Texas Instruments, where he focuses on automotive USB Power Delivery and DC/DC converter solutions. With over a decade of experience at TI, Seong has supported a wide range of embedded and power designs – from Wi-Fi/Bluetooth MCUs for IoT to high-speed USB-C and PD systems in automotive environments. He works closely with automotive OEMs and Tier-1s to enable reliable fast-charging systems, and is regarded as a go-to expert on PD integration challenges. Seong has authored technical collateral and training materials used across TI’s global customer base, and is listed as an inventor on a pending U.S. patent related to USB Power Delivery. He holds a BSEE from the University of Texas at Dallas and is based in Dallas, Texas.

Stefano Panaro is a Systems Engineer in Texas Instrument’s Power Design Services team focused on designing power solution for Automotive and Communications applications. His main focus is on the design of DCDC converters, with a power level ranging from mW to kW. He received his BS in ECE and his MS in Electronic Engineering from Politecnico di Torino, Italy.

Related Content

• A quick and practical view of USB Power Delivery (USB-PD) design
• USB Power Delivery: incompatibility-derived foibles and failures
• Power Tips #130: Migrating from a barrel jack to USB Type-C PD
• Power Tips #75: USB Power Delivery for automotive systems
• Power Tips #142: A comparison study on a floating voltage tracking power supply for ATE

Additional resources

• For more information, see the reference design from TI, “Automotive, 24V to 60V input, two-port USB Power Delivery 60W maximum per port reference design.”

The post Power Tips #143: Tips for keeping the power converter cool in automotive USB PD applications appeared first on EDN.

5V, Up to 64KB Flash Memory, Rich Peripherals, and High Noise Immunity Empowering Industrial and Home Appliance Applications

Nuvoton Technology released the enhanced 1T-8051 microcontroller series – NuMicro MG51, tailored for applications such as home appliances, LED dimming, motor control, and industrial automation.

Key Features of the NuMicro MG51 Series:

• High-Speed Core: 1T-8051 core running up to 24 MHz.
• Rich Memory: Up to 64 KB of Flash memory, 4 KB of SRAM, and 4 KB of LDROM.
• Robust Operation: Wide voltage (2.4V-5.5V) and industrial temperature (-40°C to +105°C) support.
• High Noise Immunity: 7 kV ESD (HBM) and 4.4 kV EFT protection.
• Advanced Control: Up to 12-channel PWM for precise motor control.
• Flexible Communication: Up to 5 UARTs, SPI, and I²C interfaces.
• High-Precision Sensing: 15-channel, 12-bit ADC with 500 kSPS sampling rate.
• Ample I/O: Up to 46 GPIOs with flexible interrupt configuration.

Running at speeds of up to 24 MHz, the MG51 series features up to 64 KB of Flash memory, 4 KB of SRAM, and 4 KB of LDROM. It integrates rich communication and control peripherals, supports 5V operation, industrial-grade temperature range, and robust noise immunity. Multiple package options are available, including the 48-pin version that supports up to 46 external interrupt-capable I/Os, offering developers excellent design flexibility and application scalability.

The MG51 is equipped with four 16-bit timers and up to five independent UARTs. These include two UARTs with built-in error detection and automatic address recognition, and three ISO 7816-3 compliant interfaces (which can also function as UARTs with automatic parity check support). One SPI and one I²C interface are also provided to support various communication and data transfer needs.

The series supports up to 12-channel PWM outputs, making it ideal for small motor applications such as fans and pumps. It also integrates up to 15-channel 12-bit ADCs with 500 kSPS continuous conversion, capable of real-time sensing of temperature, current, and light, making it highly suitable for smart appliances, energy control modules, and automation systems.

MG51 provides 24 interrupt sources and four levels of interrupt priority. Combined with flexible I/O configuration, it is ideal for systems requiring multi-point input control and event triggering, such as LED dimming, keypad control, audio, and alarm modules. The series operates reliably across a wide industrial temperature range, from -40°C to +105°C, and features high noise immunity with ESD protection of up to 7 kV and EFT protection of up to 4.4 kV. It supports a wide operating voltage range from 2.4V to 5.5V, ensuring stable performance across diverse power environments.

In terms of chip security, this series offers three protection mechanisms.

• Prevents program readout via ICP pins through Flash lock bits.
• Built-in 128-byte Security Protection ROM (SPROM). In security mode, the SPROM region is executable-only and inaccessible for code or data read. In non-security mode, it can also be used as Data Flash.
• Provides a 96-bit Unique Identification (UID) and a customizable 128-bit Unique Customer Identification (UCID).

Package options include TSSOP20/28, QFN20/33, and LQFP32/48—six types in total—addressing the needs of space-constrained applications. The entire MG51 series is now in mass production and fully available.

Comprehensive development resources are also offered, including the NuMaker development boards and Nu-Link debuggers. MG51 is compatible with Keil C51, IAR EW8051, and NuEclipse SDCC development toolchains. Notably, NuEclipse is Nuvoton’s in-house cross-platform embedded development suite for 8051 and Arm cores, designed specifically for the NuMicro MCU series. It integrates multiple Eclipse plug-ins and tools, enabling developers to efficiently build, compile, and debug projects within the familiar Eclipse framework across both Linux and Windows platforms, thereby accelerating development and reducing time-to-market.

The post Nuvoton Technology Launches 8-bit NuMicro MG51 Series Microcontrollers appeared first on ELE Times.

The USA smartphone market continues to be in its 2025 dimension, along the lines of innovation, competition, and consumer loyalty. With a global battle for supremacy, users look towards what they consider best: AI-powered photography, 5G capabilities, foldable designs, and extended software support. Here is a more detailed breakdown of the top 10 smartphone brands in the USA, based upon innovation, customer faith, and general performance.

1. Apple

Apple, based in Cupertino, California, is by far the most recognized name in U.S. smartphones. The iPhones hold nearly 55% of the market share, with the iPhone 15 generation leading both premium and mainstream smartphone markets. Most choose Apple basically because of the iOS ecosystem, longevity of software support, and proprietary chips. Satellite connectivity, Dynamic Island, and cutting-edge camera systems continue to set the standards for user expectations.

2. Samsung

Samsung from Seoul holds the second-biggest share of the U.S. smartphone market. With a couple of good Galaxy S and Z Fold/Flip series models, Samsung continues to claim the top place in Android innovation. The Galaxy S24 Ultra and Z Fold5 have set benchmarks with AMOLED displays, S Pen functionality, and foldable designs. With powerful specs and One UI, Samsung offers options across all price points.

3. Google Pixel

The Google Smartphone Division is located in Mountain View, California, steadily increasing market presence in the U.S. Pixel 8 Pro glorifies Google’s expertise in computational photography, pure Android experience, and AI-based features such as Magic Eraser and real-time call screening. 7 years of software support beginning with the Pixel 8 series-however, Google has set a new bar for Android longevity.

4. OnePlus

OnePlus, a subsidiary of BBK Electronics, and headquartered in Shenzhen in China, has made a big market among tech-savvy users in the U.S. OnePlus 12 flaunts a set of flagship-level specifications with Snapdragon 8 Gen 3, an awe-inspiring AMOLED display, and Hasselblad-powered cameras. Known for its fast charging and smooth OxygenOS, OnePlus offers performance-oriented devices at competitive prices.

5. Motorola

Founded in the US and now owned by Lenovo, Motorola is now based in Chicago, Illinois. It has staged quite a good comeback with the Moto G and Edge series, which promise great performance and near stock Android. Its iconic Razr foldables are the epitome of nostalgia meeting modern-day tech. Motorola targets those looking for affordable phones with long battery.

6. TCL

TCL, the highest-rated company for televisions and displays, ventures into the smartphone field with its operating headquarters in Huizhou, China. Although still minor on volume basis, TCL has been garnering attention for its budget smartphones that never compromise on display or build quality. The customers are attracted by phones like the TCL 50 XL 5G for the affordable 5G-ready phone.

7. ASUS

ASUS, with headquarters in Taipei, Taiwan, caters to the niche gaming phone market in the U.S. ROG Phone 8 Pro, with a 165Hz refresh rate and huge battery, along with cooling accessories for hours of intense gaming, is the ultimate power phone. While not exactly mainstream, ASUS appeals greatly to gamers and power users.

8. Sony Xperia

Sony Mobile, based out of Tokyo, aims at some niche professional users and content creators in the U.S. Its Xperia 1 V has a 4K OLED screen and Zeiss-tuned cameras, perfect for videography and media consumption. Though it sells in smaller numbers, Sony phones are well-regarded for their abilities as multimedia devices and for their stylish looks.

9. Honor

Honor, a quickly scaling brand situated in Shenzhen, China, has been making waves in the global markets and slowly making entry into the U.S. scenario, predominantly through online platforms and unlocked devices. Formerly a sub-brand of Huawei, Honor is now an independent entity, known for its stylish design, robust hardware, and relative value offerings. Its newest flagship, Honor Magic6 Pro, is the powerful contender that comes with Snapdragon 8 Gen 3, 120Hz OLED display, and Elite AI photography.

10. BLU

BLU Products is a smartphone company located in Miami, Florida, offering ultra-affordable unlocked Indian handsets. Blu targets entry-level users with simplistic smartphones that go for sale on the web or prepaid carrier plans. Up-to-date spec-wise, G91s provides a set of features under $150: an ideal purchase for buyers watchful of their budget or just a second phone for a user.

Tech Table: Specifications Comparison

Brand	Flagship Model	Display	Processor	RAM / Storage
Apple	iPhone 15 Pro Max	6.7″ Super Retina XDR OLED 120Hz	Apple A17 Pro	8GB / up to 1TB
Samsung	Galaxy S24 Ultra	6.8″ QHD+ AMOLED 2X, 120Hz	Snapdragon 8 Gen 3	16GB / up to 512GB
Google	Pixel 8 Pro	6.7″ LTPO OLED, 120Hz	Google Tensor G3	12GB / 128GB–1TB
OnePlus	OnePlus 12	6.8″ AMOLED ProXDR, 120Hz	Snapdragon 8 Gen 3	16GB / up to 512GB
Motorola	Moto Edge+ (2024)	6.7″ OLED, 165Hz	Snapdragon 8 Gen 2	8GB / 512GB
TCL	TCL 50 XL 5G	6.8″ FHD+ LCD, 120Hz	MediaTek Dimensity 6100	6GB / 128GB
ASUS	ROG Phone 8 Pro	6.78″ AMOLED, 165Hz	Snapdragon 8 Gen 3	16GB / up to 1TB
Sony	Xperia 1 V	6.5″ 4K OLED, 120Hz	Snapdragon 8 Gen 2	12GB / 256GB
Honor	Honor Magic6 Pro	6.8″ LTPO OLED, 120Hz	Snapdragon 8 Gen 3	12GB / up to 1TB
Blu	BLU G91s	6.5″ HD+ LCD, 60Hz	MediaTek Helio G80	4GB / 128GB

 

Flagship Model & Price Range Comparison:

Brand	Flagship Model	Approx. Price (In USD)
Apple	iPhone 15 Pro Max	$1,199
Samsung	Galaxy S24 Ultra	$1,299
Google	Pixel 8 Pro	$999
OnePlus	OnePlus 12	$799
Motorola	Moto Edge+	$699
TCL	TCL 50 XL 5G	$299
ASUS	ROG Phone 8 Pro	$1,099
Sony	Xperia 1 V	$1,299
Honor	Honor Magic6 Pro	$899
Blu	BLU G91s	$149

Conclusion:

In 2025, the U.S. smartphone market remains dynamic yet is dominated by a select few powerhouses, with Apple holding the throne with unparalleled brand loyalty and ecosystem strength; Samsung, the Android flagbearer, maintains its position by innovation-first approach; while the Pixel lineup from Google is changing the way AI is integrated with mobile tech.

The post Top 10 Smartphone Brands in USA appeared first on ELE Times.

Indium phosphide (InP)-based optical communications device developer and manufacturer HieFo Corp of Alhambra, CA, USA (formed from management buy-out of the chips business and wafer fabrication operations of Emcore Corp in May 2024) has announced the commercial release of its new HOT25 specialty distributed feedback (DFB) laser chip, engineered specifically for optical time domain reflectometer (OTDR) applications in fiber-optic test & measurement equipment. HieFo says that, like most other products in its portfolio, the OTDR product is the result of an in-house R&D project without relying on any legacy technology from Emcore...

A Mississippi State University faculty member has earned a US National Science Foundation (NSF) CAREER award to develop the next generation of energy-efficient, transparent and environmentally friendly LED lighting...

The news about TSMC exiting the gallium nitride (GaN) foundry business has stunned the semiconductor industry, also laying the groundwork for integrated device manufacturers (IDMs) like Infineon Technologies to seize the moment and fill the vacuum.

Technology and trade media are abuzz with how GaN power device manufacturing is different from traditional power semiconductors, and how it doesn’t create strong demand for foundry services. Industry watchers are also pointing to the rising price pressure from Chinese GaN fabs as a driver for TSMC’s exit.

To offer clarity on this matter, EDN recently spoke with Johannes Schoiswohl, senior VP and GM of Business Line GaN Systems at Infineon. We began with asking how GaN manufacturing differs from mainstream silicon fabrication. “They are fundamentally not so different because we start with a silicon wafer and then grow epitaxy of GaN on top of it,” he said.

The dedicated epitaxial machines conduct the process of growing a GaN layer on top of a silicon substrate. “That’s the key difference,” Schoiswohl added. “From then onward, when GaN epi is grown, we use processes and tools similar to silicon fabrication.”

Figure 1 Johannes Schoiswohl explains the engineering know-how required in GaN fabrication. Source: Infineon

GaN’s journey to 300 mm

While China’s Innoscience claims to be the world’s largest 8-inch GaN IDM, operating a dedicated GaN-on-silicon facility, Infineon is hedging its bets on 300-mm GaN manufacturing. The German chipmaker plans to produce the first 300-mm GaN samples by the end of 2025 and kickstart volume manufacturing in 2026.

That will make Infineon the first semiconductor manufacturer to successfully develop 300-millimeter GaN power wafer technology within its existing high-volume manufacturing infrastructure. “We were able to move from 6-inch to 8-inch quickly and now to 300-mm because we could use the existing silicon equipment, and that’s beautiful from a capex perspective,” said Schoiswohl.

Figure 2 GaN production on 300-mm wafers is technically more advanced and significantly more efficient compared to established 200-mm wafers. Source: Infineon

What’s really new is the 300-mm epi tool, he added. “Moving to 300-mm fabrication is indeed challenging because there are a lot of engineering issues that need to be resolved,” Schoiswohl said. The GaN layer on top of the silicon layer has a different crystal structure, which causes a lot of strain and mismatch. Additionally, there could be a significant amount of wafer breakage. “It means that a lot of engineering know-how will go into the 300-mm GaN fabrication,” he said.

In a report published in Star Market Daily, Innoscience CEO Weiwei Luo acknowledged significant barriers that hinder the commercial realization of 12-inch or 300-mm GaN wafers. He especially mentioned the lack of metal-organic chemical vapor deposition (MOCVD) equipment capable of supporting 300-mm GaN epitaxy; MOCVD is the core equipment for the epitaxial growth of GaN layers.

Regarding MOVCD tools for 300-mm wafers, Schoiswohl acknowledged that Infineon is currently in the early stages. “We are working closely with MOCVD equipment vendors.”

GaN fabrication model

TSMC’s exit has raised questions about why the foundry model is losing traction in GaN. According to Innoscience CEO Luo, power GaN devices aren’t well-suited for the traditional foundry model because they require close coupling between design, epitaxy, process, and application. That’s where the foundry-client model struggles while the IDM model offers the agility and control.

Infineon’s Schoiswohl says that GaN manufacturing isn’t low margin, but what you need to do is ensure value creation. “First and foremost, you need to be cost-competitive,” he said. “You need to drive down costs aggressively, and for that, you must have a cost-effective manufacturing technology, which is 300-mm GaN wafers in this case.”

Second, IDMs like Infineon can innovate at the system level. “It’s not enough to simply develop a GaN transistor,” Schoiswohl said. “We need to have gate drivers and controllers and thus demonstrate how to create a system that offers maximum value.”

Figure 3 The system approach for GaN devices complements cost competitiveness. Source: Infineon

With optimized controllers and gate drivers, engineers can create GaN solutions that bring the system costs down. That makes GaN a meaningful and profitable business; however, this is far more challenging for a foundry than an IDM.

With 300-mm enablement and a focus on the system-level approach, Schoiswohl is confident that GaN can eventually reach cost parity with silicon. “The progress on product level triggers innovation on system level, where gate drivers and controller ICs are optimized for high-frequency implementations and new topologies.”

Future of GaN technology

While Infineon is doubling down on GaN manufacturing, Schoiswohl foresees massive advancements in the performance of GaN from a design standpoint. “We’ll see a huge drop in parasitic capacitance and on-state resistance in a given form factor.”

That, in turn, could harness the release of high-voltage bi-directional switches, where devices are analytically integrated into one die. You could turn it on and off in both directions, which enables a lot of new topologies.

With TSMC’s exit from the GaN fabrication business, will IDMs be the winners in this power electronics segment? Will GaN heavyweight Infineon be able to execute its 300-mm GaN roadmap as planned? Will other fabs follow suit after TSMC’s departure? These questions make the GaN turf a lot more fun to watch.

Related Content

• Navitas Previews New Fab Plans, ‘Bidirectional GaN’
• The diverging worlds of SiC and GaN semiconductors
• A brief history of gallium nitride (GaN) semiconductors
• Infineon Successfully Develops World’s First 300 mm Power Gan Technology
• Power GaN Manufacturing Landscape: Foundries and Vertically Integrated IDMs Compete

The post A new IDM era kickstarts in the gallium nitride (GaN) world appeared first on EDN.

MacDermid Alpha Electronics Solutions, the electronics business of Elements Solutions Inc, launched macdermidalpha.com – a unified global website built to deepen digital engagement. The launch marks a significant milestone in the business’ ongoing commitment to delivering more meaningful, interactive, and impactful experiences for its customers, talent, and stakeholders worldwide.

This digital transformation creates an intuitive platform designed to elevate MacDermid Alpha’s brand visibility, empower user engagement, and drive business growth in today’s fast-moving electronics landscape.

“This is more than a website – it’s a platform for connection,” said Julia Murray, Vice President, Global Marketing Communications, MacDermid Alpha Electronics Solutions. “We designed this experience to support our customers and partners in the ways that matter most – to highlight the depth of our expertise and connect our global team and culture more closely with the communities we serve.”

Reimagining the Digital Experience for Deeper Connections

This launch is driven by a customer-first, stakeholder-aligned approach, focused on accessibility, relevance, and responsiveness:

• For Customers:The website offers simplified navigation by industry and application, robust technical resources that help engineers, buyers, and partners find what they need – faster.
• For Talent:A dynamic careers section spotlights MacDermid Alpha’s culture, innovation, and purpose-driven mission as part of Elements Solutions, providing job seekers with an inside look at what it means to grow with a global technology leader.
• For Stakeholders:From media and investors to collaborators, the platform offers streamlined access to insights, brand stories, and thought leadership – reinforcing transparency and strengthening MacDermid Alpha Electronics Solutions’ role as a trusted partner in electronics manufacturing.

Built to Engage, Designed to Inspire

• Unified Brand Experience:A single global platform with consistent messaging reinforces the strength of the MacDermid Alpha brand and technology portfolio and provides a seamless journey across all lines of business.
• Relationship-Driven:The website integrates engagement and fosters meaningful connections at every stage – whether it is a customer exploring new solutions or a potential future colleague discovering career opportunities.
• Optimized for Discovery:With advanced SEO and content strategy, MacDermid Alpha is expanding its reach and increasing discoverability among new audiences in the electronics industries and regions.

A Catalyst for Growth

This next-generation digital presence is designed not only to inform, but to engage, inspire, and convert. It is a critical component of MacDermid Alpha’s broader digital marketing strategy to:

• Engage with customers through intuitive UX and technical resources.
• Strengthen global brand presence across global markets.
• Attract top talent through enhanced careers section.
• Deepen relationships with media, industry influencers, and stakeholders.

The post MacDermid Alpha Electronics Solutions Unveils Unified Global Website to Deepen Customer, Talent, and Stakeholder Engagement appeared first on ELE Times.

Although I have been messing around with PCB software for a while, I just recently built my very first PCBs and got both to work. The 1st one is the main PCB for a battle bot I made (there is supposed to be an ESP32 in the middle, but I removed it to show what is under). The 2nd one is its controller. submitted by /u/No_Name_3469 [link] [comments]

submitted by /u/Linker3000 [link] [comments]

Could be used as a part of an alarm system. Its a 555 timer in astable mode driving the TRIAC's gate at around 2Hz, powered by a capacitive dropper to be able to run directly from mains without a separate PSU. submitted by /u/Athosworld [link] [comments]

Recent research breakthroughs are pushing semiconductors far beyond traditional logic and memory roles into chemical catalysis, sustainable manufacturing, and quantum photonics.

🎓 Міжгалузеві освітні програми kpi ср, 07/30/2025 - 20:27

❗️Навчання, стажування і практика з новими партнерами! Освітня програма "Страхова та фінансова математика" kpi ср, 07/30/2025 - 20:01

Learn how UALink offers an open, high-speed interconnect for AI accelerators, that enables scalable, low-latency, and energy-efficient AI systems for next-gen workloads.

submitted by /u/LegalAd8550 [link] [comments]

“Two halves make a whole” is a very old and often true maxim. For example, it’s almost always true when said about AC phase angle power control. You rarely want significant alternating half-cycle asymmetry due to the (usually undesirable) DC load current component that unequal half-cycle conduction angles create. A nicely balanced, DC-free, whole, and symmetrical full-wave power is therefore the desired output waveform.

Wow the engineering world with your unique design: Design Ideas Submission Guide

So, what to do if you have an application that needs better symmetry than available thyristors can deliver without some fine-tuning? For example, in Figure 1, Q2’s datasheet specifies ±3 V = ±8% of polarity-dependent trigger voltage asymmetry. Or suppose that (for some bizarre reason) you actually want precisely controllable amounts of deliberate half-cycle conduction angle inequality. What then? 

Figure 1 offers a simple solution for both problems. It implements independent control of positive and negative half-cycle phase angles using separate and independent trigger-time constant-setting PWM channels: One for positive half cycles, another for negative. Where:

Positive half wave timeconstant = R1C1 / DF+

Negative half wave timeconstant = R1C1 / DF-

DF = PWM duty factor = 0 to 1

Figure 1 Q1 and Q3 provide independent triggering-time constants for opposite polarity half-waves.

The power control method in play is phase angle conduction via QUADRAC thyristor Q2. It’s wired in the traditional way except that opto-isolators Q1 and Q3 fill in for the usual manual phase adjustment pot. The duty factor (DF) of the PWM inputs sets the phototransistor’s average conductance. Diodes D1 and D2 select whichever optoisolator corresponds with an instantaneous 60-Hz half-wave polarity. The type H11D1 300-V opto has a typical current transfer ratio of 80% which makes ~10 mA of PWM drive current necessary. Current limiter R2’s 330 Ω assumes a 5-V rail and a low impedance driver. That will need adjustment if either assumption doesn’t apply to your system. The PWM cycle rate isn’t critical but should be circa 10 kHz. 

The full-throttle output efficiency is around 99%, but Q2’s maximum junction temperature rating is only 110 °C. So, adequate heatsinking of Q2 will be wise if RMS output >200 W is expected.

The adjustment range for each half-cycle phase spans an upper limit of DF = 1, which sets a maximum conductance angle of ~2.6 radians and 95% = 117 Vrms output power, down to DF = 0 and zero power. Figure 2 shows the approximate relationship between DF and conduction angle, while Figure 3 illustrates its inverse.

Figure 2 Thyristor conduction angle R [R = pi – 0.60 DF-(2/pi)] versus PWM DF, where the y-axis is in radians and the x-axis is the unitless DF.

Figure 3 The PWM DF [((pi – R)/0.60)-(pi/2)] versus the desired conduction angle R. The y-axis is the DF, and the x-axis is in radians.

 Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

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• PWM + Quadrac = Pure Power Play
• DC Motor Drive Basics – Part 1: Thyristor Drive Overview
• 555 timer triggers phase-control circuit

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