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🎥 Відкрито R&D-лабораторію «Монтаж та експлуатація електротехнічного обладнання»

Новини - 2 години 1 хв тому
🎥 Відкрито R&D-лабораторію «Монтаж та експлуатація електротехнічного обладнання»
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KPI4U-2 чт, 06/11/2026 - 13:06
Текст

⚡️Ще один крок до сучасної інженерної освіти в КПІ ім. Ігоря Сікорського — відкриття R&D-лабораторії «Монтаж та експлуатація електротехнічного обладнання».

КПІ ім. Ігоря Сікорського відвідала делегація PCM & MAT Kosovo (Республіка Мальта)

Новини - 2 години 47 хв тому
КПІ ім. Ігоря Сікорського відвідала делегація PCM & MAT Kosovo (Республіка Мальта)
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kpi чт, 06/11/2026 - 13:01
Текст

⚙️ Під час візиту делегації міжнародної організації PCM & MAT Kosovo (Республіка Мальта) йшлося про перспективу створення на базі КПІ міжнародного навчально-тренінгового центру з протимінної безпеки та гуманітарного розмінування. Він готуватиме фахівців із виявлення та знешкодження вибухонебезпечних предметів і управління ризиками на територіях, що постраждали від війни.

Обговорення перспективних напрямів співпраці між КПІ та американськими партнерами

Новини - 2 години 58 хв тому
Обговорення перспективних напрямів співпраці між КПІ та американськими партнерами
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kpi чт, 06/11/2026 - 12:50
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КПІ ім. Ігоря Сікорського відвідали CEO America-Ukraine Strategic Partners (AUSP) разом із представниками Американсько-Української Ділової Ради (USUBC)

Vishay Extends ILHB Ferrite Beads for Wider Automotive EMC Support

ELE Times - 3 години 17 хв тому

Vishay Intertechnology, Inc. announces an expansion of its ILHB series of Automotive Grade multilayer chip ferrite beads for high current filtering. The Vishay Dale devices now offer higher current capability, smaller case sizes, and a wider range of impedance values to meet a broader set of EMC noise reduction requirements.

The ILHB series is now available in 0402, 0603, 0805, 1008, and 1206 case sizes with current handling up to 6 A and impedance values from 10 Ω to 2700 Ω. The expanded lineup allows designers to achieve higher current handling in smaller packages, while delivering two to three times the current capability for the same package size and impedance value.

The immense range of sizes, current handling, and impedance values allows the ILHB ferrite beads to be used in a wider array of EMC noise reduction applications. These include high current, high frequency, and signal-specific filtering in automotive energy distribution and management systems; industrial automation systems; home and building controls; computers and computer peripherals; consumer devices; white goods; medical instrumentation; avionics; and telecom infrastructure.

The ILHB product datasheets optimize with additional design parameters that help engineers estimate bead performance across more frequencies without consulting multiple performance graphs to simplify device selection. These parameters include impedance peak value and frequency, the frequency at which impedance drops below the nominal value, and the X- and R-frequency crossover point.

The AEC-Q200 qualified devices feature a silver (Ag) inner conductor with copper (Cu), nickel (Ni), and tin (Sn) plating. The ferrite beads operate over a temperature range from -55 °C to +125 °C and are RoHS-compliant, halogen-free, and Vishay Green.

Device Specification Table:

Part number IHLB-0402 IHLB-0603 IHLB-0805 IHLB-1008 IHLB-1206
Case size 0402 0603 0805 1008 1206
Dimensions (mm) 1.0 x 0.5 x 0.5 1.6 x 0.8 x 0.8 2.0 x 1.2 x 0.85 2.5 x 2.0 3.2 x 1.6
Z at 100 MHz (W) 10 to 1800 22 to 2500 17 to 2700 300 to 600 19 to 1000
DCR max. (mW) 18 to 2400 7 to 1800 10 to 800 30 10 to 300
Rated DC current at 85 °C (1) (A) 0.05 to 3.1 0.05 to 6 0.2 to 6 4 0.5 to 6
Zpk (2) (W) 19 to 3738 28 to 2526 21.6 to 31 868 554 to 670 32.68 to 1167
F at Zpk (3) (MHz) 97 to 1329 78 to 1000 72 to 1132 122 to 155 61 to 2921
Z typ. at 100 MHz (W) 10 to 2038 22 to 2200 17 to 2713 309 to 517 17.2 to 1000
F at ZDO (4) (MHz) 125 to > 10 000 100 to 8000 84 to 8000 138 to 222 100 to > 10 000
XL / XR x over (5) (MHz) 31 to 710 26 to 439 23 to 298 100 to 117 25 to 120

 

  • Rated current is the DC that causes a 40 °C temperature rise at 20 °C ambient
  • Zpk = peak of impedance curve
  • F at Zpk = frequency of Zpk
  • F at ZDO = frequency above 100 MHz where Z drops to nominal Z
  • XL / XR x over = crossover point for inductive reactance and resistance impedance

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Qorvo’s New Compact Front-End Redefines X-Band Radar Performance

ELE Times - 3 години 42 хв тому

Qorvo introduces an X-band radar front-end solution that enables defense system designers to achieve higher performance without increasing size, weight, or prime power. The design targets modern phase array and multifunction sensors. The solution combines transmit power, efficiency, and receive sensitivity in a single compact module, addressing key challenges in next-generation radar design.

 

The Qorvo QPF5012 is a fully integrated X-band transmit/receive front-end module operating from 8.5 to 10.5 GHz, delivering 10W of transmit power.  With 42 percent power-added efficiency and 2.1 dB noise figure in a 7 x 5 mm package, the QPF5012 enables designers to extend radar range, reduce thermal load, and improve detection sensitivity without increasing system complexity. 

“Radar designers have historically been forced to trade off output power, prime power, or sensitivity,” said Doug Bostrom, general manager of Qorvo’s Defense and Aerospace business. “With the QPF5012, Qorvo brings all three together in a compact integrated front-end module, helping customers simplify design, reduce thermal constraints, and improve real-world radar performance.”

 

QPF5012 is specifically built for X-band phased array radar applications where size, weight, and power (SWaP) and thermal performance are critical. Its high level of integration reduces component count and simplifies system design while maintaining constant efficiency and RF output power across changing antenna loads. This enables AESA systems to deliver more consistent RF performance across varying scan angles. Qorvo enables this integration through vertically integrated RF design expertise, advanced multi-technology packaging, and trusted manufacturing capabilities.

Key Features of QPF5012:  

  • 10W saturated transmit power across 8.5 to 10.5 GHz  
  • 42% power-added efficiency to reduce prime power consumption and thermal load  
  • 2.1 dB noise figure to improve receive sensitivity and detection accuracy  
  • Integrated T/R functionality in a compact 7 x 5 mm module to reduce SWaP and design complexity. 

 

By delivering power, efficiency, and sensitivity together in a single integrated module, Qorvo enables defense radar designers to overcome traditional design constraints and achieve higher system-level performance in a compact front-end architecture.

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Northrop Grumman develops market-ready GaN chip for W-band RF in under six months

Semiconductor today - 3 години 45 хв тому
US-based aerospace & defense technology company Northrop Grumman Corp has fabricated a new gallium nitride (GaN) chip that sets what is claimed to be a new performance standard for military and commercial use...

Carbon nanotube coating creates on-chip terahertz waveguides

EDN Network - 4 години 23 хв тому

There’s considerable interest in leveraging the bandwidth and other potential virtues of terahertz waves that occupy the spectrum between the conventional RF and optical worlds, generally considered to span 100 GHz (3 mm wavelength) to 10 THz (30 μm). However, managing electromagnetic energy at these wavelengths presents many challenges, as they are too short for most electronics, yet too long for all-optical components.

Nonetheless, there’s a significant amount of ongoing research in developing the materials and components needed, especially with many potential applications, including the emerging 6G standards being developed now.

At these frequencies and corresponding wavelengths, signal energy must be conveyed via waveguides—discrete wires won’t do, of course. But making the needed waveguide physical transitions is difficult when they are fabricated in silicon as part of a larger set of on-chip functions.

Addressing this issue, a team of researchers at The Skolkovo Institute of Science and Technology—or Skoltech, a private institute in Moscow—working with a team from KTH Royal Institute of Technology in Sweden, has developed a key technology that could support silicon-based terahertz waveguides and their on-chip transitions.

Their solution is based on carbon nanotubes, one of those amazing materials that keeps offering solutions to diverse problems. The single-wall carbon nanotube (SWCNT) was discovered in 1991 (see “A Brief Introduction of Carbon Nanotubes: History, Synthesis, and Properties“). Like fullerene and graphene, SWCNTs are one of the allotropes of carbon.

Allotropes present a different structural form of the same chemical element within the same physical state; because their atoms are bonded differently, allotropes have vastly different physical and chemical properties from each other—think diamond versus graphite.

A key challenge in building these complex terahertz arrangements is devising properly matched terminations. Without proper termination, reflections at device discontinuities can cascade, thus degrading performance and altering the intended operational profile. In addition, these terminations are necessary for characterization of multi-port devices such as directional couplers, where the unused ports must be terminated with matched loads.

The conventional solution is to use adiabatic or impedance-matched tapering of the waveguide cross-section to free space, gradually expanding the guided mode to induce radiation losses while operating as a dielectric rod antenna. However, the efficiency of these structures depends on the length of the tapering, therefore consuming valuable chip area; it can also radiate power in undesirable directions, thus complicating packaging, limiting integration density, and creating electromagnetic pollution.

Note that in the adiabatic-coupling approach, the optical mode is coupled from one waveguide to another by a slow change of a waveguide parameter (width, thickness, or both) such that the optical mode remains in the fundamental mode and does not couple to unwanted higher-order modes. As a result, the tapered waveguides need to be long enough to meet the requirements of the adiabatic conditions of slow change of waveguide parameter. However, at the same time, they need to meet the device compactness requirement. Therefore, there is a trade-off to be made

The research team devised and tested a carbon nanotube-based coating that blocks electromagnetic radiation, thereby creating waveguides compatible with terahertz wavelengths. The ultrathin single-walled carbon nanotube films that they synthesized are similar to those that they used previously to create small-scale components, such as lenses and antennas, but with a big difference, as this time it’s not for standalone components. Instead, they leveraged carbon-based material to control electromagnetic radiation in 2D-integrated optical circuits, eliminate interference, and enable additional functionality.

They demonstrated a compact, broadband termination by coating silicon dielectric rod waveguides (DRW) with ultrathin single-walled carbon nanotube films. Fabricated via a floating-catalyst (aerosol) chemical vapor-deposition process, the film thickness varies from 2 to 53 nm and was characterized in the 140-220 GHz range. A 53-nm thick film introduced up to 47 dB of attenuation while maintaining over 20 dB reflection loss, confirming nearly reflection-free absorption (Figure 1).

Figure 1 Reflection measurements of the SWCNT-loaded DRWs show ∣S11∣ for the 6-mm long samples (a) and ∣S11∣ for the 12-mm long samples (b). The light grey line is baseline reflection after calibration by measuring a thru-standard (flanges of the frequency extenders connected); dark grey is the reflection coefficient of an unloaded DRW. Source: Nature Communications

Shielding analysis shows absorption dominates over reflection, and they achieved a record specific shielding efficiency of 5.5 × 109 dB cm2/g (Figure 2).

Figure 2 Shielding efficiency components for the SWCNT-coated dielectric waveguides: reflection component SER (a, b), absorption component SEA. (c, d), and total shielding SET (e, f) for 6-mm (left column) and 12-mm (right column) samples over 140-220 GHz, with light grey as the equivalent shielding efficiency of an unloaded silicon waveguide provided for reference. Source: Nature Communications

This approach offers a footprint-efficient solution for high-density terahertz circuits without bulky, radiative terminations. The work is presented in their paper “Ultrathin Single-Walled Carbon Nanotube Surface Wave Absorbers for Terahertz Dielectric Waveguides” published in Nature Communications. It’s unfortunate that the paper does not have any microphotographs of the SWCNT waveguide and transitions in silicon, so you’ll just have to visualize those yourself.

Have you had any interaction with or uses for carbon nanotubes? If so, in what way? Do you see a role for them in any of your projects, whether terahertz or other?

Bill Schweber is a degreed senior EE who has written three textbooks, hundreds of technical articles, opinion columns, and product features. Prior to becoming an author and editor, he spent his entire hands-on career on the analog side by working on power supplies, sensors, signal conditioning, and wired and wireless communication links. His work experience includes many years at Analog Devices in applications and marketing.

Related Content

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STMicroelectronics Unveils Ultra-Precise Automotive IMU

ELE Times - 6 годин 15 хв тому

The ASM330LHHG1 automotive qualifies as an Inertial Measurement Unit (IMU), which operates from -40°C to 125°C, mounts in vehicle zones, including those where the ambient temperature may be a concern. Combining low-noise sensors, temperature compensation, and a 6-channel synchronize output, the IMU fulfils the industry’s need for greater dead-reckoning accuracy to support navigation and positioning.

Today’s cars, vans, and trucks, as well as industrial and agricultural vehicles, can leverage increasingly accurate GNSS positioning technologies for applications such as routing, tracking, navigation, and driver assistance. These new and latest systems need high-quality dead reckoning to maintain continuity between satellite updates and provide effective fallback during GNSS outages or corruption, ensuring superior performance and greater resilience.

ST’s ASM330LHHG1 meets this need by delivering 3-axis accelerometer and 3-axis gyroscope data through its synchronized output that ensures consistent signal timing for dead-reckoning calculations, motion-data correlation, and GNSS fusion. Both sensors leverage the latest MEMS processes for low noise and benefit from built-in temperature compensation for enhanced stability.

The IMU provides accurate data for other non-safety applications throughout the vehicle, with an accelerometer full-scale range of ±16g and an extended gyroscope range covering ±125dps to ±4000dps with minimal bias drift. These include vehicle-to-everything (V2X) systems, telematics, eTolling, anti-theft, impact detection, crash reconstruction, driving comfort, vibration monitoring and compensation, and general motion-activated functions.

The post STMicroelectronics Unveils Ultra-Precise Automotive IMU appeared first on ELE Times.

SoC FPGA advances wideband RF processing

EDN Network - Срд, 06/10/2026 - 23:28

Altera is now sampling its Agilex 9 Direct RF AGRW039 wideband SoC FPGA for aerospace, defense, and communication systems. According to Altera, the device delivers a 40% increase in compute capability per square millimeter. It also provides 45% greater logic and DSP density than the previous generation and supports DDR5 and LPDDR5 memory technologies.

With integrated 64-Gsample/s wideband RF and increased compute and memory resources, the programmable device eliminates the need for multichip designs and enables advanced beamforming, radar, and data cube processing. The AGRW039 provides high-bandwidth signal capture and generation, allowing customers to scale performance while maintaining design flexibility.

Agilex 9 Direct RF SoC FPGAs combine high-speed data converters, programmable logic, and processing elements in a single package. The integrated architecture helps reduce system complexity and power consumption for wideband RF applications that require real-time performance.

Production silicon and development kits for the Agilex 9 Direct RF AGRW039 are expected to be available in Q3 2026.

Agilex 9 Direct RF series

Altera

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TO-247 SiC package boosts high-voltage isolation

EDN Network - Срд, 06/10/2026 - 23:28

Navitas has developed a TO-247 package offering more than 6000 V of isolation for its 1200-V, 2300-V, and 3300-V SiC MOSFETs. Designated the UHV-TO-247-4-ISO, the through-hole package supports direct-cooled thermal management through a reflow-compatible isolated thermal pad. It also provides over 12 mm of pin-to-pin creepage, enabling module-level performance in a compact discrete form factor.

Compared to standard non-isolated through-hole packages, the UHV-TO-247-4-ISO reduces the need for external high-voltage isolation while improving thermal and EMI performance. These benefits extend to high-voltage grid-tied power conversion systems, solid-state transformers, battery energy storage systems, and renewable energy applications.

The UHV-TO-247-4-ISO delivers integrated high-voltage isolation using an AlN substrate, reducing die-to-heatsink capacitance and helping lower common-mode noise and radiated EMI. Its reflow-compatible, direct-cooled thermal interface enables direct mounting to liquid- or air-cooled heatsinks, improving thermal performance while eliminating the need for external TIM and isolation materials. The package also enhances thermal cycling and power cycling lifetime through its AlN/AMB construction and robust heatsink interface.

To request samples or additional product information, please contact a Navitas sales representative or email info@navitassemi.com.

Navitas Semiconductor 

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ROHM partners with Aixtron to establish in-house GaN epi

Semiconductor today - Срд, 06/10/2026 - 22:28
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has announced a strategic production partnership with ROHM Semiconductor, which has selected Aixtron’s G10-GaN metal-organic chemical vapor deposition (MOCVD) system to establish in-house gallium nitride (GaN) epitaxy at its Hamamatsu plant in Japan. The system is currently ramping for volume production of 8-inch GaN epitaxial wafers for 650V and 100V power device platforms...

EPC launches smallest GaN drive based on EPC33110 for robots and drones

Semiconductor today - Срд, 06/10/2026 - 21:43
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91132, a compact 3-phase BLDC motor drive inverter reference design based on the EPC33110 GaN three-phase module...

EPC2378 25V, 410µΩ eGaN enters mass production for high-density DC–DC conversion

Semiconductor today - Срд, 06/10/2026 - 21:36
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that its new EPC2378 25V eGaN power transistor has entered mass production, enabling high-density power system designers to achieve higher efficiency, faster switching and greater power density in demanding DC–DC conversion applications. EPC2378 is optimized for synchronous rectifier applications on the secondary side of a 48V-8 or 5V LLC converter. In addition to what is claimed to be the best-in-class 410µΩ typical RDS(on), the devices have an industry-leading low RDS(on) x QG figure of merit that enables higher-frequency and higher-efficiency operation. These capabilities are of particular value in fast-growth markets such as AI infrastructure, data centers, telecom, industrial systems and advanced computing platforms...

Vertical power platform cuts AI thermal bottlenecks

EDN Network - Срд, 06/10/2026 - 21:33

Lotus Microsystems’ vStrata vertical power delivery platform targets the electrical, thermal, and mechanical challenges of AI infrastructure. The first module in the vStrata Power Series, the LS0580, is a fully integrated power-system-in-package (PSiP) that places power conversion closer to the load to reduce distribution losses and board complexity. The device has completed tape-out for leading CPU, GPU, and AI accelerator platforms, with engineering samples shipping in Q3 2026.

Built on a silicon-based substrate, vStrata combines power delivery, thermal management, and packaging in a single architecture. Designed for kiloampere-class AI workloads, the platform delivers up to 96% point-of-load efficiency while reducing power losses and thermal constraints. Its low-profile vertical architecture is enabled by silicon PIT technology, supporting ultra-thin designs below 1 mm by placing power directly beneath the processor to shorten electrical paths and improve transient response.

The vStrata platform is compatible with existing power management controllers and reference designs. Lotus is currently evaluating the platform with hyperscale customers and additional partners through an early access program.

vStrata product page

Lotus Microsystems 

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Hall switch streamlines automotive position sensing

EDN Network - Срд, 06/10/2026 - 21:32

The Melexis MLX92344 is a 2-wire, 2-bit Hall-effect switch for contactless detection of up to four positions in automotive body electronics. Unlike conventional microswitch-based approaches that often require multiple mechanical switches to detect intermediate positions, the MLX92344 simplifies system design by providing programmable current levels and magnetic thresholds. It is suited for applications such as seat track positioning, soft-closing doors, and multilevel trunk locks.

A dual programmable architecture lets designers assign output current levels directly to the device’s magnetic operating and release thresholds, with temperature compensation for both neodymium and ferrite magnets. Up to four different current levels can be configured between 3 mA and 28 mA, enabling the MLX92344 to emulate standard microswitch interfaces while maintaining compatibility with existing hardware and ECUs. The device can be sensed through standard I/O triggers or an ADC, requiring only software readout adjustments.

The MLX92344 offers a wide magnetic operating range from 0.5 mT to 200 mT. It is ASIL B SEooC compliant, AEC-Q100 qualified, and operates from 2.7 V to 28 V over a temperature range of -40°C to +150°C. The switch is available in both surface-mount and through-hole packages.

MLX92344 product page 

Melexis

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NVIDIA chip powers local AI workloads

EDN Network - Срд, 06/10/2026 - 21:22

NVIDIA has unveiled the RTX Spark, a “superchip” delivering up to 1 petaflop of AI compute to enable Windows PCs to run personal AI agents. The device combines 128 GB of unified memory with an NVIDIA Blackwell RTX GPU featuring 6,144 CUDA cores and fifth-generation Tensor Cores that provide FP4 precision. The GPU connects to a high-performance 20-core Grace CPU via the NVLink-C2 chip-to-chip interconnect.

NVIDIA collaborated with MediaTek on the custom CPU design, contributing to strong power efficiency, performance, and connectivity. NVIDIA also partnered with Microsoft to deliver a secure Windows platform for on-device agents, incorporating new Windows security primitives and the NVIDIA OpenShell runtime to safely run autonomous AI agents.

RTX Spark brings NVIDIA’s AI and graphics technologies to creators, developers, and gamers. It can run 120-billion-parameter language models, render large 3D scenes, and accelerate 12K video editing. For gaming, the platform supports ray tracing and NVIDIA DLSS technologies for enhanced visual quality and performance.

RTX Spark-based laptops and compact desktops will be available this fall from leading manufacturers.

RTX Spark product page 

NVIDIA

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How fleet learning works under bounded gate authority

EDN Network - Срд, 06/10/2026 - 20:28

The first article in this silicon governance series established a fundamental reality: observability is not automatically governed evidence. Advanced AI silicon platforms generate a massive stream of runtime telemetry, including network-on-chip (NoC) counters, voltage diagnostics, thermal maps, memory-state logs, firmware traces, error signatures, and workload-dependent behavior. But raw observability alone lacks the context, synchronization, and causality required to explain physical system behavior.

The second article extended that thesis into runtime operation by introducing the firmware–hardware handshake. Hardware senses transient states. Firmware executes localized, bounded actions. A governance layer determines whether those runtime actions remain valid, safe, and causally justified.

This third article closes the loop.

Once complex AI accelerators, multi-die chiplets, HBM modules, advanced heterogeneous packages, and cloud-scale systems are deployed at enterprise scale, a new question appears. How does field evidence refine future silicon, package, firmware, and system decisions without creating an uncontrolled feedback loop of autonomous adaptation?

That question requires fleet learning to operate under bounded gate authority. The operating principle is simple: Fleet learning recommends and bounded gate authority approves.

Fleet learning can identify macro-scale failure signatures, detect structural drift across deployed systems, and recommend policy refinement. But fleet learning should not independently close development gates, alter firmware release criteria, rewrite operating envelopes, or approve lifecycle actions.

That final step requires bounded decision authority.

From single-chip handshake to cluster-scale drift

The firmware–hardware handshake begins locally.

A voltage droop appears on an internal rail.

  • A thermal sensor reports a localized hot spot.
  • A SerDes lane loses operating margin.
  • A memory controller logs an error correcting code (ECC) event.
  • Firmware responds through a pre-validated, bounded action envelope.

At the single-device level, this can preserve operation. But modern AI infrastructure does not operate as isolated silicon. Instead, a single accelerator becomes a board.

  • A board integrates into a rack.
  • A rack scales into a data-center cluster.
  • A cluster becomes a globally distributed fleet.

At that scale, localized runtime compensation is no longer sufficient. Thousands of multi-die devices operating under shifting workloads begin to reveal multi-physics patterns that no isolated lab test, qualification plan, or pre-silicon simulation could fully predict.

A high-speed SerDes retraining event may appear harmless on one device. Across a fleet, it may reveal an advanced-package escape, connector-aging issue, or workload-dependent signal-integrity margin deficit.

A recurrent voltage droop may look like firmware tuning noise. Across many systems, it may correlate with one package substrate lot, one raw-material source, one board configuration, or one power delivery network (PDN) resonance condition.

A persistent thermal asymmetry may look like a local cooling issue. Across a data-center tier, it may expose thermal interface material (TIM) variation, substrate warpage, lid-attach tolerance, or airflow interaction. Next, scattered ECC events may appear random. Across workload, voltage, temperature, memory location, and package population, they may reveal a wafer-to-package interaction or localized timing drift.

The purpose of fleet learning is not to collect more telemetry; the purpose is to normalize field behavior into governed lifecycle evidence.

Telemetry is not convergence

Modern AI clusters are already saturated with logging mechanisms. They continuously capture physical, electrical, firmware, and workload states. But this raw telemetry stream is not system convergence. A monitoring dashboard can flag a symptom.

  • A generic AI model can identify a statistical correlation.
  • An error log can timestamp an interruption.
  • A fleet database can reveal clustering.

But none of those observations automatically confirms physical causality.

A recurring signal-integrity degradation event may look like normal channel aging. In reality, the root cause could be board-level connector variation, package escape routing discontinuity, local thermal expansion, substrate variation, return-path interruption, or mechanical stress accumulation at the package-to-board interface.

A voltage instability event may look like a firmware behavior. In reality, it may originate from package inductance, PDN resonance, voltage regulator module (VRM) response, decoupling placement, silicon switching current, or thermal drift.

A thermal excursion may look like a cooling problem. In reality, it may involve workload placement, TIM thickness, lid attach, airflow, die placement, package warpage, or power-map concentration. This is why unconstrained AI analytics can be risky in high-reliability semiconductor environments.

A system that blindly changes operating bounds based on weakly governed telemetry may optimize the wrong variable, amplify false correlations, mask physical defects, or push firmware parameters outside validated design boundaries. But the objective is not more raw data; the objective is trusted, admissible evidence.

SEGA-AI response: A governed feedback architecture

Fleet learning within the SEGA-AI/governance for lifecycle stack is fundamentally different from standard cloud-level log analytics.

  • It’s not generic telemetry analytics.
  • It’s not unconstrained AI optimization
  • It’s not self-modifying infrastructure

Fleet learning is a governed realization-feedback architecture. Its purpose is to connect deployed behavior back to the assumptions made during pre-silicon design, packaging floor-planning, post-silicon validation, qualification, manufacturing release, and firmware policy definition.

It asks: 

  • Was the original design guardband correct?
  • Was the package-level simulation model complete?
  • Did the system EM corridor have enough high-frequency margin?
  • Did the physical PDN respond as predicted under maximum dI/dt load steps?
  • Did the firmware policy preserve global convergence or only local stability?
  • Did one package lot behave differently from another?
  • Did one board configuration or connector population age differently?
  • Did field behavior expose a validation escape?

This transforms the field from a passive reliability archive into an active lifecycle evidence source. But the field does not rule the system. Instead, deployed behavior informs the governance stack, and bounded gate authority governs the decision.

Fleet learning recommends and bounded gate authority approves

The most important safety principle is that fleet Learning can recommend refinement, but bounded gate authority must approve action.

This prevents a dangerous failure mode: allowing field data, machine learning, or runtime analytics to directly modify firmware policy, release criteria, validation guardbands, or corrective-action rules without sufficient evidence authority.

In large fleets, an unsafe automated update can create systemic instability. A local firmware action that works on one device may create thermal imbalance across a rack. A voltage policy that improves one workload may reduce aging margin elsewhere. A SerDes retraining policy may preserve one link but increase synchronization overhead across a cluster.

Therefore, fleet-scale learning must pass through a multi-state decision gate. Here, bounded gate authority can issue one of six outcomes.

  1. Close: The fleet evidence is mature, admissible, causally verified, and sufficient to advance the configuration.
  2. Remain open: The evidence is immature, stale, incomplete, conflicting, or not yet tied to critical to quality (CTQ) parameters.
  3. Reopen: Authoritative fleet evidence invalidates a previously closed validation, firmware, package, or release assumption.
  4. Escalate: Uncertainty, risk severity, or cross-domain conflict exceeds the bounded authority envelope and requires human engineering review.
  5. Approve bounded action: A limited mitigation is allowed inside a pre-validated safe envelope, such as narrowing a frequency range, changing a retraining threshold, adjusting a voltage policy, or applying a lot-specific firmware constraint.
  6. Block release: A critical CTQ, causality path, or reliability condition remains unresolved.

This is the difference between learning from the fleet and being controlled by the fleet. Fleet learning identifies the pattern; bounded gate authority decides whether the pattern is mature enough to authorize action.

Example 1: SerDes retraining across a fleet

Consider a high-speed SerDes interface operating across thousands of deployed systems. A single lane retraining event may not be alarming. It may result from temperature, workload burst, supply noise, aging, or normal link management. But if fleet learning detects repeated retraining patterns across a specific package lot, board revision, connector family, thermal condition, or workload pattern, the signal becomes more important.

The system must ask:

  • Is this random runtime behavior or a repeatable system EM corridor weakness?
  • Does the pattern correlate with package escape, PCB material, connector transition, thermal gradient, return-path discontinuity, or voltage noise?
  • Does it appear only under specific workloads or across all operating conditions?
  • Does retraining preserve operation, or does it mask progressive margin loss?

Fleet learning can recommend a refinement: adjust validation thresholds, update link-margin assumptions, modify firmware retraining policy, or reopen a system EM corridor gate. But bounded gate authority decides whether that recommendation is admissible and actionable.

The gate should not close until the evidence is mature enough to distinguish a transient workload excursion from a real corridor degradation pattern.

Example 2: Voltage droop tied to one package lot

A runtime voltage droop may initially appear as a firmware or VRM issue. But fleet-scale evidence may show that the event occurs more frequently in systems built from one package lot, one substrate batch, one board stackup, one decoupling configuration, or one supplier population. That changes the engineering question.

The issue may involve package inductance, silicon switching current, decoupling placement, VRM response, PDN anti-resonance, substrate variation, thermal concentration, or workload-driven current transients.

Fleet learning can identify the population-level pattern. But the decision cannot be automatic. Bounded gate authority must determine whether the evidence is strong enough to reopen a package PDN assumption.

  • Adjust firmware voltage policy
  • Change validation stress conditions
  • Hold a package lot
  • Escalate to package reliability or failure analysis
  • Approve a bounded runtime mitigation

The field may reveal the pattern, but the gate determines authority.

Example 3: Thermal asymmetry and package realization

Thermal asymmetry is common in AI systems because workloads are uneven, packages are large, and cooling solutions interact with board and chassis design. A single hot region may not prove a package problem.

But if repeated thermal asymmetry appears across a fleet and correlates with package construction, TIM behavior, lid attach, substrate warpage, airflow condition, or power map, it becomes lifecycle evidence. Here, fleet Learning may recommend updates to thermal guardbands.

  • Package model assumptions
  • Assembly admissibility criteria
  • Firmware workload placement
  • Throttling thresholds
  • Future validation conditions

However, bounded gate authority must decide whether the evidence is mature enough to change policy. Otherwise, the system risks overcorrecting a local symptom and creating a new global instability.

Example 4: ECC events under workload and temperature

ECC events are another important fleet signal. An isolated ECC event may not indicate a major issue. But patterns across workload, temperature, voltage, memory stack, package lot, board configuration, or aging profile may reveal a deeper convergence problem. The source may be memory behavior, power noise, package stress, thermal gradients, firmware scheduling, silicon aging, or a wafer-to-package interaction.

Fleet learning can detect that the event population is no longer random. Next, bounded gate authority must determine whether to remain open and collect more evidence.

  • Reopen a validation assumption
  • Escalate to memory, package, or system teams
  • Approve a bounded firmware mitigation
  • Block a release configuration
  • Refine next-generation design constraints

Again, the value is not only anomaly detection; it’s also governed lifecycle authority.

Example 5: When local firmware action creates fleet-level drift

The firmware–hardware handshake allows local corrective action. That is necessary. But local action can create fleet-level consequences.

A firmware policy that throttles one tile may preserve local thermal margin but shift workload stress to another region. A voltage adjustment may stabilize one condition but accelerate aging under another workload. A SerDes retraining rule may improve link continuity but increase synchronization overhead, operational variability, or latency across a cluster.

So, fleet learning is needed to detect these second-order effects. And bounded gate authority is needed to prevent uncontrolled policy changes.

So, the system must ask:

  • Is the local action preserving global convergence?
  • Is the firmware response still inside the approved action envelope?
  • Does the correction create hidden thermal, timing, power, or reliability debt?
  • Should the action remain approved, be narrowed, be escalated, or be retired?

This is the lifecycle version of the firmware–hardware handshake. Runtime action is not enough, and it must remain governed as fleet evidence accumulates.

Realization in practice: Reopening a validation assumption

Consider a next-generation AI accelerator cluster that successfully cleared pre-silicon signoff, post-silicon validation, and package-level qualification. After several months of deployment, firmware on multiple independent racks begins executing repeated SerDes link retraining sequences. A standard facility log may classify these events as isolated thermal excursions or normal link maintenance.

A governed fleet learning system treats the events differently. It aggregates the retraining events across the fleet, normalizes timestamps, maps them against package lots and board configurations, and compares them with workload signatures, thermal maps, substrate data, and system operating conditions.

The pattern becomes clear: the retraining events occur after localized multi-core workload bursts that generate a thermal gradient across a specific package/substrate population. This is no longer random operational noise. It’s a possible validation escape where real-world multi-physics interaction has violated an original design or package guardband.

Fleet learning generates the recommendation. And bounded gate authority evaluates the evidence package, checks admissibility, verifies causality, and may issue a Reopen outcome on the affected configuration milestone.

The system should not blindly mask the issue through continuous retraining. Instead, it can approve a bounded mitigation for the affected population while sending convergence-authoritative evidence back to validation, package engineering, firmware teams, and pre-silicon architecture groups.

That is the lifecycle loop. Field evidence does not simply become a log; it becomes governed input for the next design, package, validation, and firmware policy decision.

Closing the loop back to design and validation

The most important output of fleet learning is not only field mitigation; it’s lifecycle refinement. Mature fleet evidence should flow back into pre-silicon design assumptions.

  • Package constraints
  • System EM corridor models
  • PDN and CPAM assumptions
  • Firmware policies
  • Thermal guardbands
  • Qualification thresholds
  • Design for test (DFT) and observability planning
  • Manufacturing tolerances
  • Supplier and lot-level evidence models
  • Next-generation architecture decisions

This is how the silicon governance loop closes and the field becomes a governed evidence source for the next design cycle. But only if the evidence is admissible.

That requires the SEGA-AI stack in which test case generator (TCG) protects trust and admissibility.

  • Convergence evidence maturity hierarchy (CEMH) defines evidence maturity
  • Fleet learning recommends lifecycle refinement
  • Bounded gate authority approves the decision

Without this structure, field telemetry remains operational logging. With this structure, field telemetry becomes lifecycle convergence evidence.

The SEGA-AI view

From a SEGA-AI perspective, fleet learning is not an uncontrolled feedback loop. It’s a governed lifecycle refinement system; it does not replace engineering judgment.

  • It does not replace firmware teams.
  • It does not replace validation.
  • It does not replace failure analysis.
  • It does not independently close gates.

It connects runtime behavior to governed decision authority. That allows deployed systems to improve future realization decisions while preserving deterministic control. And that is the difference between learning from the fleet and being controlled by the fleet.

Closing the silicon governance loop

The semiconductor industry has moved beyond isolated design-time closure. In the era of hyperscale AI platforms, multi-die chiplets, HBM systems, advanced packages, and volatile workloads, no single signoff event can guarantee long-term physical convergence across thousands of deployed systems.

The answer is not unconstrained autonomous adaptation. The answer is governed lifecycle learning.

Fleet learning provides the analytical path to uncover systemic patterns, detect drift, and recommend refinement. Bounded gate authority provides the engineering boundary that determines whether those recommendations are mature, admissible, causally aligned, and safe enough to act upon.

Together, they close the silicon governance loop.

Dr. Moh Kolbehdari is senior director of IC/packaging at Socionext US.

Editor’s Note

This is Part 3 of the article series about silicon governance framework. Part 1 explained why data movement alone cannot explain system behavior in modern AI chip designs. Next, Part 2 described the firmware-hardware handshake in a silicon governance system.

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The post How fleet learning works under bounded gate authority appeared first on EDN.

Last year made this normal attendance system

Reddit:Electronics - Срд, 06/10/2026 - 16:31
Last year made this normal attendance system

How it works:

  1. The teacher first scans their fingerprint to unlock the system.

  2. Students then scan their fingerprints.

  3. The system identifies the student using the fingerprint sensor.

  4. It records the student's attendance along with the exact date and time from the RTC module.

  5. The student's name and attendance status are displayed on the LCD.

  6. An SMS is automatically sent to the parent informing them that the student attended the lecture

  7. Attendance data is also sent to another number in a form hat can be stored digitally.

Last year I built this , then i visited tech feast with this, people there showing AI language translators, automated water filling and packaging machines, computer vision systems, custom PCBs, and projects that looked like actual products.

Meanwhile, my project was basically a small box with a fingerprint sensor and LCD

Now I'm motivated to build something much bigger this year, but no good idea is coming in mind

Can anyone share there project they might have built in there college times

submitted by /u/PenComprehensive4721
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onsemi launches GaNEXUS gallium nitride power portfolio

Semiconductor today - Срд, 06/10/2026 - 15:57
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has launched its GaNEXUS gallium nitride (GaN) power portfolio...

4mA-20mA to 0mA-20mA converter’s current mirror drives grounded load

EDN Network - Срд, 06/10/2026 - 15:00

The ubiquity of the 4 to 20mA current loop in analog process monitoring and control creates possibilities for peculiar designs of circuits for unusual accessory functions.  Figure 1 shows an example.  It does precision conversion of 4—20mA to 0—20mA.  That’s useful for accommodating analog inputs that wouldn’t like a 4mA zero offset.

Wow the engineering world with your unique design: Design Ideas Submission Guide


Figure 1 This current conversion circuit’s function is define by the following equation: Iout = (IinR1 – 1.24v)/R2 = 1.25(Iin – 4mA).

The core of the circuit is the Vin = IR1 = 1.24v to 6.20v developed by the 4mA – 20mA input working into R1 and sensed by the Vref input of Z1. The principle in play is discussed here.

A potentially annoying shortcoming of the Figure 1 design, however, is its current sink output that’s referred not to ground but to the V+ source node, which needs to be at least 8v.  Figure 2 offers an accurate and straightforward fix: an active current mirror as described here. The input max overhead voltage is 8v.


Figure 2 This circuit adds an active current mirror to its predecessor to drive a grounded load.

Stephen Woodward‘s relationship with EDN’s DI column goes back quite a long way. Over 200 submissions have been accepted since his first contribution back in 1974.  They have included best Design Idea of the year in 1974 and 2001.

Related Content

The post 4mA-20mA to 0mA-20mA converter’s current mirror drives grounded load appeared first on EDN.

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