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A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access frequency of over 200 MHz and a write throughput of 10.4 MB/s at a maximum junction temperature of 125°C.

Renesas, which developed circuit technologies for this embedded spin-transfer torque MRAM (STT-MRAM) test chip, presented details about it on February 20 at the International Solid-State Circuits Conference 2024 (ISSCC 2024) held on 18-22 February in San Francisco. The Japanese chipmaker has designed this embedded MRAM macro to bolster read access and write throughput for high-performance MCUs.

Figure 1 The MCU test chip incorporates a 10.8-Mbit embedded MRAM memory cell array. Source: Renesas

Microcontrollers in endpoint devices are expected to deliver higher performance than ever, especially in Internet of Things (IoT) and artificial intelligence (AI) applications. Here, the CPU clock frequencies of high-performance MCUs are in the hundreds of MHz, and to achieve greater performance, read speeds of embedded non-volatile memory need to be increased to minimize the gap between them and CPU clock frequencies.

However, MRAM has a smaller read margin than the flash memory used in conventional MCUs, which makes high-speed read operation more difficult. At the same time, MRAM is faster than flash memory for write performance because it requires no erase operation before performing write operations. That’s why shortening write times is desirable not only for everyday use but also for cost reduction of writing test patterns in test processes and writing control codes by end-product manufacturers.

Renesas has developed circuit technologies for an embedded STT-MRAM test chip with fast read and write operations to address this design conundrum.

Faster read and write

First, take MRAM reading, which is generally performed by a differential amplifier or sense amplifier to determine which of the memory cell current or reference current is larger. But because the difference in memory cell currents between the 0 and 1 states—read window—is smaller for MRAM than for flash memory, the reference current must be precisely positioned in the center of the read window for faster reading.

So, Renesas introduces two mechanisms to achieve faster read speed. First, it aligns the reference current in the center of the window according to the actual current distribution of the memory cells for each chip measured during the test process. Second, it reduces the offset of the sense amplifier.

Another challenge that Renesas engineers have overcome relates to conventional configurations, where large parasitic capacitance in the circuits is used to control the voltage of the bitline, so it doesn’t rise too high during read operations. While it slows the reading process, Renesas has introduced a Cascode connection scheme to reduce parasitic capacitance and speed up reading. That allows design engineers to realize the random read operation at more than 200 MHz frequencies.

Next, for write operation, it’s worth mentioning that Renesas announced in December 2021 that it has improved write throughput by applying write voltage simultaneously to all bits in a write unit using a relatively low write voltage generated from the external voltage (I/O power) of the MCU through a step-down circuit. Then, it used a higher write voltage only for the remaining few bits that could not be written.

Figure 2 In late 2021, Renesas announced an increase in the write speed of an STT-MRAM test chip manufactured on a 16-nm node.

Now, while power supply conditions used in test processes and by end-product manufacturers are stable, Renesas has relaxed the lower voltage limit of the external voltage. As a result, by setting the higher step-down voltage from the external voltage to be applied to all bits in the first phase, write throughput can be improved 1.8-fold. A faster write speed will contribute to more efficient code writing in endpoint devices.

Test chip evaluation

The prototype MCU test chip combines the above two enhancements to offer a 10.8 Mbit MRAM memory cell array fabricated using a 22-nm embedded process. The evaluation of the prototype chip validated that it achieved a random read access frequency of over 200 MHz and a write throughput of 10.4 MB/s.

The MCU test chip also contains 0.3 Mbit of one-time programmable (OTP) memory that uses MRAM cell breakdown to prevent falsification of data. That makes it capable of storing security information. However, writing to OTP requires a higher voltage than writing to MRAM, which makes it more difficult to perform writing in the field, where power supply voltages are often less stable. Here, Renesas suppressed parasitic resistance within the memory cell array, which in turn, makes writing in the field possible.

Renesas has vowed to further increase the capacity, speed, and power efficiency of MRAM.

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• MRAM and ReRAM expected to displace incumbent memory technologies

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In a move set to revolutionize the Internet of Things (IoT) landscape, u-blox has introduced the NORA-W4 module, a cutting-edge solution tailored to meet the evolving demands of IoT applications. This state-of-the-art module, hailed as the most cost-effective and reliable single-band Wi-Fi 6 module on the market, promises to redefine connectivity standards for battery-operated devices.

Designed to address the burgeoning needs of various sectors including smart homes, asset tracking, healthcare, and industrial automation, the NORA-W4 module integrates advanced wireless technologies including Wi-Fi 6, Bluetooth Low Energy 5.3, Thread, and Zigbee. Boasting compact dimensions of just 10.4 x 14.3 x 1.9 mm, the module is built on the Espressif ESP32-C6 System-on-Chip, offering a single-band tri-radio Wi-Fi 6 solution.

One of the standout features of the NORA-W4 module is its ability to enable battery-powered IoT nodes to operate directly over Wi-Fi, eliminating the necessity for a Bluetooth gateway and subsequently reducing system-level costs. This attribute is particularly advantageous for wireless battery-operated sensors and similar applications, promising enhanced efficiency and cost-effectiveness.

Key features of the NORA-W4 module include:

• Integration of Wi-Fi 6, Bluetooth Low Energy 5.3, Zigbee, and Thread connectivity.
• Support for Wi-Fi 6 Target Wake Time and low-power peripherals.
• Comprehensive security features ensure enhanced protection.
• Compact design with various antenna options and compatibility with other NORA modules.
• Support for the Matter protocol over Wi-Fi or Thread.
• Global certification ensures usability worldwide.

Emphasizing the significance of Wi-Fi 6 technology, the module is optimized for IoT environments, offering reduced network congestion and improved throughput in crowded settings such as factories and warehouses. Moreover, its compatibility with Wi-Fi 4 ensures seamless integration with existing infrastructure.

Security remains a top priority, with the module incorporating features such as secure boot, a trusted execution environment, and flash encryption. Offering six variants catering to diverse requirements, the module provides options for open CPU or u-connectXpress, antenna pin or PCB antenna, and 4MB or 8MB flash memory.

Early samples of the NORA-W4 module are currently available, with volume production slated to commence in the second half of 2024. This milestone launch underscores u-blox’s commitment to delivering innovative solutions that push the boundaries of IoT connectivity.

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Rohde & Schwarz is introducing two new setups for 5G RF and RRM conformance testing. The R&S TS8980S-4A is a cost-efficient single-box solution tailored to 3GPP inband test cases, and the R&S TS8980FTA-3A is a single-rack solution covering all inband and out-of-band test cases. No other solution on the market offers the same capabilities in such a compact format.

The R&S TS8980 is an official 5G conformance test platform approved by the Global Certification Forum (GCF) and the PCS Type Certification Review Board (PTCRB). Chipset, modem and end device manufacturers as well as test houses can use the test system to perform RF (TP298) and RRM (TP296) tests in line with 3GPP specifications. The platform also meets the test requirements of network operators and regulatory bodies.

Rohde & Schwarz has developed two new setups for its successful R&S TS8980 family: the R&S TS8980S-4A and the R&S TS8980FTA-3A. These solutions meet the market requirements for reduced hardware and a smaller footprint.

The single-box solution R&S TS8980S-4A is a fully automated conformance test system for performing validated conformance test cases up to 8 GHz and 4 carrier aggregation (4 CA). Based on an enhanced R&S CMX500 one-box 5G signalling tester (OBT), it is a cost-efficient solution that supports 3GPP RX/TX inband conformance test cases, demodulation and radio resource management (RRM) test cases. Customers can also upgrade their R&S CMX500 to an R&S TS8980S-4A. This solution is particularly attractive for 5G device manufacturers who want to perform inband testing in-house and outsource out-of-band testing to a test house. The automation is based on the R&S Contest software platform with an intuitive GUI, advanced tools for fast debugging and a sophisticated report manager for big data analysis and cloud services.

The single-rack solution R&S TS8980FTA-3A is the most compact conformance test solution on the market. It supports the full range of both inband and out-of-band test cases and the entire device certification process for RF and RRM, covering 5G NR as defined by 3GPP and carrier acceptance specifications. Typically, these capabilities require a two-rack solution. Now, Rohde & Schwarz has succeeded in reducing the footprint of this test system to a single rack setup, allowing it to be installed in laboratories with limited floor space.

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The post Renesas Develops New AI Accelerator for Lightweight AI Models and Embedded Processor Technology to Enable Real-Time Processing appeared first on ELE Times.

A three-phase BLDC motor driver, the AOZ32063MQV from AOS, offers an input voltage range of 5 V to 60 V and 100% duty cycle operation. The IC enables efficient motor operation, while its low standby power helps extend the battery life of cordless power tools and e-bikes.

The AOZ32063MQV drives three half-bridges consisting of six N-channel power MOSFETs for three-phase applications. It has a high-side sink current of 1A and a maximum source current of 0.8 A. A power-saving sleep mode lowers current consumption to just 1 µA.

Along with an integrated bootstrap diode, the driver provides adjustable dead-time control and a fault indication output. Onboard protection functions include input undervoltage, short-circuit, overcurrent, and thermal shutdown. The device operates over a temperature range of -40°C to +125°C.

Housed in a 4×4-mm QFN-28L package, the AOZ32063MQV costs $1.55 in lots of 1000 units. It is available in production quantities, with a lead time of 24 weeks.

AOZ32063MQV product page

Alpha & Omega Semiconductor 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Murata expands its GJM022 series of high-Q multilayer ceramic capacitors (MLCCs) with a 100-V device that is just 0.4×0.2 mm (L×W). The MLCC is intended for high-frequency module applications, such as those used in cellular communication infrastructure.

Exhibiting high-Q, low-loss performance, the miniature capacitor enables electronic engineers to overcome packaging limitations, while maintaining optimal performance. A high-temperature guarantee also gives designers greater positioning freedom. The MLCC helps ensure reliable long-term operation, even in close proximity to power semiconductors that radiate heat.

The GJM022 can be used for a wide variety of applications, including impedance matching and DC cutting within RF modules for base stations. In such implementations, the capacitor’s high-Q value and low equivalent series resistance (ESR) contribute to improving power amplifier efficiency and lowering power consumption.

Engineering samples of the GJM022 100-V chip capacitor are available in limited production. The product will move to full stocked production in the next several weeks. A datasheet for the device was not available at the time of this announcement. For information on the GJM series of high-Q MLCCs, click the product page link below.

GJM series product page  

Murata

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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The PolarFire SoC Discovery Kit from Microchip makes RISC-V and FPGA design accessible to a wider range of embedded engineers. This low-cost development platform allows students, beginners, and seasoned engineers alike to leverage RISC-V and FPGA technologies for creating their designs.

The Discovery Kit is built around the PolarFire MPFS095T SoC FPGA, which embeds a quad-core RISC-V processor that supports Linux and real-time applications. It also packs 95,000 FPGA logic elements. A large L2 memory subsystem can be configured for performance or deterministic operation and supports an asymmetric multiprocessing mode.

An embedded FP5 programmer is included for FPGA fabric programming, debugging, and firmware development. The development board also provides a MikroBUS expansion header for Click boards and a 40-pin Raspberry Pi connector, as well as a MIPI video connector. Expansion boards are controlled using protocols like I2C and SPI. 

The PolarFire SoC Discovery Kit costs $132 for the general public and $99 when purchased through Microchip’s Academic Program. Production kit shipments are expected to commence mid-April 2024.

PolarFire Soc Discovery Kit product page

Microchip Technology

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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pSemi announced production readiness of two UltraCMOS SP4T RF switches that operate from 10 MHz to 8.5 GHz with high channel isolation. According to the manufacturer, the PE42445 and PE42446 switches integrate seamlessly into 4G and 5G base stations and massive MIMO architectures. They can provide digital pre-distortion feedback loops and transmitter monitoring signal paths to prevent interference and maintain signal integrity.

Both the PE42445 and PE42446 offer >60 dB isolation at 4 GHz and operate over an extended temperature range of -40°C to +125°C. Additionally, the devices provide low insertion loss across the band, high linearity of 65 dBm IIP3, and a fast switching time of 200 ns.  The SP4T switches are manufactured on the company’s UltraCMOS process, a variation of silicon-on insulator technology.

The PE42445 comes in a 3×3-mm, 20-lead LGA package, while the PE42446 is housed in a 4×4-mm, 24-lead LGA package. Sales inquiries can be submitted using the product page links below.

PE42445 product page

PE42446 product page 

pSemi

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Renesas presented an embedded MRAM macro in an MCU test chip at ISSCC 2024 that delivers a random-read access frequency of over 200 MHz. The test chip also exhibited a write throughput of 10.4-Mbytes/s.

The company developed two high-speed circuit technologies to achieve faster read and write operations in spin-transfer torque magnetoresistive RAM (STT-MRAM). A prototype MCU test chip, fabricated using a 22-nm process, combined the two technologies with a 10.8-Mbit MRAM memory cell array. Evaluation of the prototype chip confirmed the high-speed results at a maximum junction temperature of 125°C.

Advancements in read technology have enabled Renesas to achieve what it claims is the world’s fastest random read access time of 4.2 ns. Even taking into consideration the setup time of the interface circuit that receives the MRAM output data, the company was able to realize random read operation at frequencies in excess of 200 MHz. Further, improved write technology can improve MRAM write throughput 1.8-fold.

For greater detail, read the complete press release here.

Renesas Electronics 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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The logic probe is powered from the device under test (DUT)—it may be any binary logic, which can be powered in the range +2 V to +6 V. This may be a microcontroller or 74/54 series logic chips, including HC/HCT chips.

Wow the engineering world with your unique design: Design Ideas Submission Guide

The probe determines 3 conditions: 

• Logical 0
• Logical 1
• Undefined (this may be a Z-condition, or bad contact).

It also features a counter, which is very handy when you want to count impulses, to estimate the value of frequency or to test an interface. (This part is shown as a sketch.)

The probe in Figure 1 consists of two Schmitt triggers, the upper trigger on the figure determines the logical 0, and the lower trigger determines the logical 1.

Figure 1 The logic probe with two Schmitt triggers where the upper determines logical 0 and the lower determines logical 1.

Two different colors were selected: 

• Blue for logical 0
• Red for logical 1

Since the blue LED demands more than 2 V, a slightly modified “joule-thief” circuit on Q2 is used to increase the voltage. The transformer has 2 windings with an inductance ranging from 80 to 200 µH, if the windings are not equal, the greater one should be connected to the collector. (The author used a tiny transformer from an old ferrite memory, but any coil with an added winding over it can do.)

If you choose a green or red LED instead of blue, the “joule-thief” circuit can be eliminated, and the LED connected between the upper terminal of R5 and “+A”.

Due to the wide supply voltage range, the current through the LEDs can increase 100% or more. Since the LEDs are quite bright, some control of brightness is desirable. It’s performed by the circuit’s U3, Q3, and two diodes, which can decrease the LEDs supply by 1.4 V.

Note, the 74HC14 can be used instead of the 74HC132 almost everywhere in the circuit.

—Peter Demchenko studied math at the University of Vilnius and has worked in software development.

Related Content

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• Using an inductor to improve an existing design
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Infineon Technologies and ASE Technology Holding Co., Ltd. have announced that definitive agreements were signed under which Infineon will sell two backend manufacturing sites, one in Cavite, Philippines and one in Cheonan, South Korea, to two fully owned subsidiaries of ASE, a leading provider of independent semiconductor manufacturing services in assembly and test. The plants currently run under the entity names Infineon Technologies Manufacturing Ltd. – Philippine Branch (Cavite) and Infineon Technologies Power Semitech Co., Ltd. (Cheonan) and will be acquired by ASE Inc. and ASE Korea Inc. respectively. Post the transaction, ASE will assume operations with current employees, and further develop both sites to support multiple customers. As such, ASE and Infineon have also concluded long-term supply agreements under which Infineon will continue to receive previously established services as well as services for new products to support its customers and fulfill existing commitments.

Infineon’s manufacturing strategy, with a balanced operations footprint combining in-house and external manufacturing, is an important pillar of the company’s profitable growth path. By pooling manufacturing volumes in Cavite and Cheonan under a new owner and offering highest-quality manufacturing services to the overall industry, Infineon and ASE will be able to leverage mutual synergy potentials, thus generating attractive growth potentials for both companies.

“We have excellent, highly competent teams and a great track record of highest quality standards at both sites, Cavite and Cheonan,” said Alexander Gorski, EVP and Head of Backend Operations at Infineon. “ASE has been a trusted, strategic partner of Infineon for many years and will be an excellent new owner that will continue on this successful path and strengthen both fabs even further. The sale of our sites to ASE is in line with Infineon’s manufacturing strategy, provides mutual synergies and enables further growth while strengthening supply chain resilience”.

“Both the automotive and power management market segments are strategic focus areas for ASE,“ said Dr. Tien Wu, Chief Operating Officer of ASE. “This acquisition of Infineon’s facilities in Cavite and Cheonan marks ASE’s strong commitment to form a strategic long-term partnership with Infineon in developing backend manufacturing solutions matching future growth opportunities. Given Infineon’s market leadership in automotive and power semiconductors and ASE’s leading position in backend semiconductor manufacturing, this partnership creates a win-win solution for the entire ecosystem from product companies to the end consumer.”

Infineon Technologies Power Semitech is a backend manufacturing site with around 300 employees. The fab is located in Cheonan, South Korea, about 60 miles south of Seoul. Infineon Technologies Cavite, is a backend manufacturing site with more than 900 employees. It is located in one of the fastest growing and most industrialized provinces in the Philippines.

The transaction is expected to close towards the end of the second calendar quarter of 2024 when all pending closing conditions will have been fulfilled.

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