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Wireless module simplifies multiprotocol IoT design

Built around the NXP RW612 wireless MCU, Quectel’s FCM365X module combines dual-band Wi-Fi 6, Bluetooth LE 5.4, Zigbee, and Thread connectivity in a single device. It integrates a 260-MHz Arm Cortex-M33 processor with TrustZone, 1.2 MB of SRAM, and 8 MB of flash, with optional PSRAM expansion.

The FCM365X gives developers the flexibility to support multiple wireless protocols while simplifying device design. Zigbee and Thread enable low-power, reliable mesh networking across smart home and industrial IoT ecosystems, with Thread emerging as a key technology for Matter-enabled devices.
Suited for power-constrained applications, the FCM365X offers multiple low-power modes and keep-alive mechanisms. Standard interfaces include GPIO, SDIO, UART, USB, SPI, and JTAG, while the QuecOpen SDK enables access to I²C, I²S, ADC, LCD, and PWM. The module also complies with WPA-PSK, WPA2-PSK, and WPA3-SAE security standards and uses AES-128 encryption.
The FCM365X is housed in an LCC+LGA surface-mount package with a compact footprint of 25.5×18.0×3.16 mm. A timeline for availability was not provided at the time of this announcement.
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80-V MOSFET improves power supply efficiency

The TPM1R408RH 80-V N-channel MOSFET is built on Toshiba’s latest-generation low-voltage U-MOS11-H process. It features an optimized device structure with an RDS(on) of 1.4 mΩ—about 26% lower than the 80-V TPM1R908QM based on the previous-generation U-MOS X-H process. It also improves the RDS(on)-Qg tradeoff, reducing figure of merit by ~45% versus the TPM1R908QM.

These reductions lower power loss in switch-mode power supplies for industrial equipment such as AI data centers and communication base stations. The TPM1R408RH also suppresses drain-source voltage spikes during switching, reducing EMI. This helps minimize late-stage design rework and simplifies filter and snubber circuits.

The MOSFET is supplied in the SOP Advance(E) package, which delivers approximately 65% lower package resistance and approximately 15% lower thermal resistance than Toshiba’s current SOP Advance(N) package. This reduces conduction losses and improves thermal performance, enabling higher power density in compact power supply designs.
The TPM1R408RH is available through Toshiba’s authorized on-line distributors.
Toshiba Electronic Devices & Storage
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UWB SoC provides precise distance measurement

Infineon’s AIROC UWB TSL100 SoC enables centimeter-level distance measurement and localization using ultra-wideband (UWB) time-of-flight (ToF) technology. Designed for low-power, secure operation, the device targets automotive, consumer, and industrial applications such as secured vehicle access, in-cabin presence detection, contactless payment and ticketing, and industrial asset tracking and collision avoidance.

The TSL100 is the first member of a scalable UWB product family intended to align with upcoming standards such as IEEE 802.15.4ab. It includes a CCC-, FiRa-, and Aliro-compliant MAC. The PHY delivers 48-bit FiRa and CCC security in challenging non-line-of-sight conditions, detecting and verifying direct paths up to 100,000 times weaker than reflected paths.
The SoC enables more than two years of coin-cell battery life in CCC ranging schemes for key fobs, achieved through a dedicated low-power mode that reduces current consumption by more than 50%. Its RF architecture extends sensing functions to presence detection, kick sensing, intrusion detection, and NCAP scenarios. Additionally, AIROC zoning technology enables configurable unlock zones and inside/outside detection for Aliro-enabled smart locks.
Engineering sample kits for the AIROC UWB TSL100 are available upon request.
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Chip combines NFC and post-quantum security

ST’s ST54M integrates a post-quantum cryptography (PQC) hardware accelerator, NFC controller, secure element, and eSIM on a single die. The chip helps smartphone and personal electronics manufacturers prepare for future post-quantum security requirements while enabling secure mobile connectivity. Applications include contactless payment, transit ticketing, access control, digital identity, and mobile driver’s licenses.

The ST54M’s hardware accelerator supports PQC algorithms such as ML-KEM and ML-DSA, aiding the transition from hybrid cryptographic approaches to full post-quantum deployment. It also helps protect against side-channel and fault-injection attacks and addresses emerging PQC requirements.
Based on an Arm Cortex-M3 32-bit MCU, the contactless front-end provides NFC card emulation, reader/writer, and peer-to-peer communication modes. It increases RF communication distance, simplifies NFC integration, and supports efficient low-power operation. An integrated step-up DC/DC converter enables transmit drive up to 3 W.
Samples are available now. Production and Common Criteria 2022 EUCC and EMVCo certifications are targeted for July 2026.
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Hall current sensor delivers sigma-delta output

The Melexis MLX91229 Hall current sensor provides a second-order sigma-delta digital output that improves signal integrity in EV traction inverter applications. Optimized for automotive systems, this output tolerates heavy EMI, helping maintain signal integrity over longer PCB traces or wiring where electrical noise can introduce disturbances between the sensor and MCU.

Unlike analog sensors, the MLX91229 encodes measured current into a sigma-delta bitstream, with information represented by the density of digital pulses rather than absolute voltage levels. This encoding makes the signal inherently more resistant to electrical noise during transmission to the MCU. Because demodulation is performed in the host MCU, designers can optimize the tradeoff between fast overcurrent detection and high-accuracy current measurement.
Supporting current sensing from 200 A to 2000 A, the MLX91229 measures peak magnetic fields from 11 mT to 400 mT. It uses Manchester-encoded data transmission over differential RS-422 or LVDS interfaces. The AEC-Q100-qualified sensor operates over an ambient temperature range of –40°C to +125°C and is powered from a selectable 3.3-V or 5-V supply.
The MLX91229 is available in a 4-pin SIP through authorized distributors and is designed as a drop-in replacement for conventional analog sensors.
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Position sensor gets linear 4 to 20mA current source output

A linearized output is a useful elaboration of a capacitive sensor design. But what if the circuit is located a significant distance from the control electronics?
Recently, Design Ideas included a circuit that comprised a simple analog interface to basic capacitive position sensors. Figure 1 shows its minimal six parts topology with complementary outputs: Out and –Out.
Wow the engineering world with your unique design: Design Ideas Submission Guide

Figure 1 U1a and U1b cross-coupled Schmidt trigger timers form a ~1MHz RC multivibrator. The Tsense pulse width is inversely proportional to sensor displacement Tref/Tsen = Cref/Csen = d.
Doubling the parts count to 12 transmogrifies Figure 1 into Figure 2 and provides a linear voltage mode output, Then, with the exemplar 38mm-diameter sensor plate capacitor connected, separation d between plates reads out as d = (Vout – 1) = 0 to 4 millimeters as Vout goes from 1 to 5v. Vout ripple is just half a millivolt pk-pk. The linear voltage output modification is described in this Design Idea.

Figure 2 Averaging integrator A1 implicitly computes the output voltage needed to linearly balance the charge transferred onto C1 during Tref through discharge during Tsense. Vout = Tref / Tsense + 1 = Cref / Csense + 1 = d + 1.
So, let’s take it as granted that providing a linearized output was a useful elaboration of the original design. But suppose the capacitive sensor is located a significant distance from the control electronics. Voltage mode analog outputs are notoriously vulnerable to noise pickup and disturbances like ground loop voltage differentials. What to do then? Figure 3 shows a simple and plausible remedy. It’s a classic, if I do say so myself. A noise- and cable length- tolerant, linear 4 to 20mA, current mode output.

Figure 3 Dangling the TLV431 shunt voltage reference Z1 from the 15 volt supply is a shortcut toward implementing a noise- and cable length- tolerant current mode output.
Here’s how it works. Figure 3’s A1 integrator generates a 1 to 5 volt linear output, much like Figure 2’s A1 does. The difference is this 1 to 5v is inverted, referenced to +15v, and developed across 249ohm current sense resistor R5. It’s therefore an accurate readout of Pfet Q1’s 4 to 20mA source current. Shunt reference Z1 provides both the 1.00v integrator reference and a 5v step-down supply for U1 and U2. DC blocking C4 and R9 trickle protect the chips from being instantly fried in case the sensor capacitor plate shorts to ground.
Some random remarks: U1’s unused inputs should be tied to +15v. C1, 2, 3, and 4 should be rated for the full supply voltage, which itself isn’t critical but shouldn’t exceed 20v. Otherwise Q1’s gate will be at risk for over-voltage if the load becomes disconnected. If the supply equals 15v as shown, voltage compliance and consequent ground noise resistance is >9v. Iout ripple is ~0.01% pk-pk. Figure 4 shows the net nicely linear response.

Figure 4 In this graph, black = sensor readout d in mm, and red = the nicely constant 4 microamps per micrometer resolution.
Stephen Woodward‘s relationship with EDN’s DI column goes back quite a long way. Over 200 submissions have been accepted since his first contribution back in 1974. They have included best Design Idea of the year in 1974 and 2001.
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CoWoS, wafer-scale and CoWoP: Why AI packaging bottleneck is moving

Advanced AI systems are forcing the semiconductor industry to rethink the boundary between silicon, package, board, power delivery, memory, cooling, and manufacturing. For several years, the dominant discussion has centered on advanced packaging capacity, high-bandwidth memory (HBM) integration, large interposers, organic substrate constraints, glass-core substrates, and scaling limits of 2.5D and 3D integration.
That discussion remains valid. But a deeper system question is emerging. What happens if the package substrate is no longer the center of the system-integration hierarchy? This question becomes especially important when comparing three architectural directions:
- CoWoS-style 2.5D integration
- Wafer-scale integration
- CoWoP/chip-on-wafer-on-platform-PCB concepts
Each approach is trying to solve the same industry problem: how to scale AI compute density, memory bandwidth, transient power delivery, thermal control, and multi-die integration beyond the physical limits of conventional packaging stacks. However, each architecture moves the bottleneck to a different place.
Chip-on-Wafer-on-Substrate (CoWoS) makes advanced packaging central to AI and high-performance compute (HPC) scaling. Next, wafer-scale integration pushes silicon integration to the extreme. Finally, Chip-on-Wafer-on-PCB (CoWoP) may create a new middle architecture where the platform PCB becomes part of the governed realization corridor.
Therefore, it’s not only a packaging phenomenon; it’s also about system realization.
CoWoS: The proven advanced packaging path
CoWoS has become one of the most important advanced-packaging architectures for AI accelerators and HPC silicon. It enables logic die, HBM stacks, and high-density interconnect to be integrated through an interposer and then connected to a package substrate and board.
The strength of CoWoS is apparent. It provides high-density die-to-die and die-to-HBM connectivity, supports large AI/HPC modules, and has become a production-proven integration path for high-bandwidth systems. However, CoWoS also exposes the limits of the modern package stack. See the complex corridor below:
Die/HBM → interposer → package substrate → PCB → voltage regulator module (VRM)/system
The package substrate must support escape routing, power delivery network (PDN) distribution, coefficient of thermal expansion (CTE) transition, mechanical stability, manufacturing yield, decoupling strategy, signal integrity (SI)/power integrity (PI) control, warpage management, and board attach reliability. And as package size increases, these challenges become more critical.
Many of the hardest problems in advanced AI packaging aren’t located in silicon; they occur in the package and package-to-board realization path.
- Warpage
- Substrate availability
- Package size
- Thermal gradients
- PDN impedance
- Loop inductance
- dI/dt response
- Decoupling placement
- SI/PI discontinuities
- Manufacturing complexity
In other words, CoWoS is powerful, but the package substrate becomes a major convergence burden. This is why glass-core substrates are receiving so much attention.
Glass substrates help, but they don’t remove corridor
Glass can improve dimensional stability, reduce warpage, provide better CTE control, support finer routing environments, and improve vertical power-delivery paths with through-glass vias (TGVs). For large AI/HPC packages and future electro-optical integration, these advantages are meaningful.
But glass should not be treated as a complete escape from package realization complexity. In most practical glass-core substrate architectures, the glass is primarily the core and the build-up layers still there. That means many high-speed routing-density challenges remain concentrated in the top build-up structure.
Moreover, bottom-side routing through the core is still not equivalent to short top-side interconnect. Signals passing through TGVs and returning through lower layers still face discontinuities, parasitics, reference-plane challenges, and SI/PI governance requirements.
So, glass changes the package problem, but it does not eliminate it. This distinction matters because CoWoP is not simply about replacing one substrate material with another. It’s about asking whether the realization hierarchy itself can change.
Wafer-scale integration: The extreme silicon path
Wafer-scale integration takes a different route. Instead of assembling many dies through a package-level integration strategy, it expands the silicon system itself. The result is an extremely large compute fabric with direct wafer-level integration, specialized power delivery, cooling, redundancy, and system infrastructure.
This can be technically powerful because it removes many conventional package boundaries and creates a very large on-wafer compute fabric. At the same time, however, wafer-scale integration does not eliminate realization complexity. It relocates it.
The board, power architecture, cooling system, mechanical structure, redundancy strategy, yield-management approach, and system-level service model must all adapt around a very large silicon platform. A useful way to summarize the difference is that wafer-scale integration expands silicon until the system must adapt around it. That can be attractive for certain AI workloads and specialized systems, but it’s not necessarily the most flexible path for every AI accelerator, custom ASIC, chiplet platform, or memory-rich architecture.
CoWoP: A possible middle architecture
CoWoP is interesting because it may offer a third path. Instead of the traditional path comprising die/HBM, interposer, package substrate and PCB, CoWoP points toward a shorter realization path.
Die/HBM → interposer/wafer-level structure → platform PCB
The deeper architectural value is not simply cost reduction. The deeper value is that CoWoP may change the power, memory, mechanical, and system-realization architecture. If the package substrate is reduced or removed, the system no longer needs to carry as much of the convergence burden through three separate layers: interposer, package substrate, and PCB.
Instead, the corridor becomes more direct. However, this directness should not be oversimplified. A realistic CoWoP architecture cannot simply assume that a fine-pitch silicon interposer can land directly onto a platform or PCB without a transition strategy.
The most important challenge may be the transition between wafer/interposer precision and PCB manufacturability. That transition may define whether CoWoP becomes a practical system architecture or remains only an attractive concept.
Dr. Moh Kolbehdari is senior director of IC/packaging at Socionext US.
Editor’s Note
This is Part 1 of the mini-series on advanced packaging. Part 2 continues with the advanced CoWoP concept: pitch translation, transition patches, VRM and memory placement, UCIe routing, and trusted realization governance.
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- Intel flash move could put wafer-level packages on the map
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Implementing a DAC: The battle of the PWMs

Ones and zeroes: are clustered or spread out bits better? “It depends,” is the answer. Well, at least sorta.
In the Comments section of a recent Design Idea for a DAC (Reference 1), one reader expressed a full-throated preference for an alternative to the common type of PWM used therein. For this “common” PWM, the ones in a repetitive cycle are “clustered” together, as are the zeroes. The reader’s preferred alternative is a “spread” type, in which the ones and zeroes are evenly disbursed within each cycle.
The clustered PWM tends to concentrate energy toward the lower frequencies, versus toward the higher with the spread PWM. Noting the relative ease of filtering out the higher frequencies, the reader argued that a microcontroller implementing the spread PWM filtered by a first order low pass (single resistor, single capacitor) filter was superior to the clustered version followed by a more complex third order filter (three pairs of these components.) So, which is the better choice? Let’s take a look.
The job of a PWM filterPWMs generally produce repetitive sequences of NO ones and NZ zeroes of length N = NO + NZ. A sequence’s filtered resolution is 1/N. Its duty cycle (DC) is its average value, NO / N. The filter will take some settling time TS to get to within some value VST of a new DC. And as long as DC is neither zero nor one, there will be an AC “ripple” signal of some level at the filter output.
Not only must the ripple signal’s contribution to TS be considered, but its post-setting time peaks and valleys must be closer than some error value VRip to DC. Typically, VRip is set to .5/N. The ideal filter meets this requirement while minimizing TS for a VST of 1/N. These requirements must hold for all DCs and transitions between them.
Verdict first, then the trialWith apologies for my paraphrase of a famous quote from Lewis Carroll’s Queen of Hearts, there’s enough math and batch file simulations required to adjudicate this PWM shoot-out that I thought it best to present the somewhat surprising (to me at least) conclusions without forcing you to first endure the derivations (perhaps this reported result will spur an interest in that math). Figure 1 provides the summary:

Figure 1 This graph shows the settling time TS for clustered and spread PWMs at various clock speeds. The spread filter employs a single resistor and capacitor; the clustered, 3 pairs of the same (see Table 1 for filter details.) Dividing the clock frequency by a factor multiplies the settling time by that same factor. The error VST at the settling time is 1/N. The post-settling time absolute maximum ripple error VRip is .5/N.
If implemented fully in hardware, such as with an FPGA, it would be possible to clock both PWM types at the same rate and compare their performances. For PWMs of more than 8 bits, the spread PWM (purple trace) with a first order analog filter does indeed settle faster than its clustered competitor (red trace) with a third order filter. The situation is reversed for PWMs of less than 8 bits. A simple explanation for this behavior is that below 8 bits, the clustered filter’s time constants turn out to be less than those of the spread, and the situation reverses above 8 bits. However, it’s worth noting that matched clocking is not possible in a microcontroller.
In a microcontroller, until a change in duty cycle is required, an initialized, clustered PWM can run indefinitely without further processor intervention. It can also benefit from the fastest clock available to the controller. Not so with the spread PWM; it requires code to be executed every PWM clock cycle period. I have assumed 6 machine cycles to execute this spread code within an infinite loop (blue trace). As such, only 16 bit and lengthier PWMs will favor the spread option.
Of course, if you need the processor to do more than just run a spread PWM, these additional functions will increase the effective spread clock period well beyond a mere 6 machine cycles. Obviously, this increases the settling time of the associated filter. And by the way, any non-PWM code had better take a constant number of clock cycles to execute, or the spread PWM output will jitter and its accuracy suffer. The less-than-pristine “cherry on top” is that processor interrupts while supporting a spread PWM are problematic.
|
PWM bits |
Sequence length |
Spread R·C/T: |
Spread settling time TS (ms), |
Spread settling time TS (ms), |
Clustered filter |
Clustered settling time TS (ms), |
|
1 |
2 |
9.102E-01 |
6.00E-03 |
1.00E-03 |
See Reference 2 which points to a spreadsheet for filter design |
7.92E-04 |
|
2 |
4 |
3.228E+00 |
3.00E-02 |
5.00E-03 |
3.32E-03 |
|
|
3 |
8 |
7.810E+00 |
1.08E-01 |
1.80E-02 |
1.01E-02 |
|
|
4 |
16 |
1.696E+01 |
3.12E-01 |
5.20E-02 |
2.93E-02 |
|
|
5 |
32 |
3.527E+01 |
8.04E-01 |
1.34E-01 |
8.32E-02 |
|
|
6 |
64 |
7.187E+01 |
1.97E+00 |
3.29E-01 |
2.34E-01 |
|
|
7 |
128 |
1.451E+02 |
4.67E+00 |
7.78E-01 |
6.53E-01 |
|
|
8 |
256 |
2.915E+02 |
1.08E+01 |
1.80E+00 |
1.81E+00 |
|
|
9 |
512 |
5.843E+02 |
2.24E+01 |
3.74E+00 |
4.98E+00 |
|
|
10 |
1024 |
1.170E+03 |
5.05E+01 |
8.42E+00 |
1.36E+01 |
|
|
11 |
2048 |
2.341E+03 |
1.12E+02 |
1.87E+01 |
3.71E+01 |
|
|
12 |
4096 |
4.684E+03 |
2.48E+02 |
4.13E+01 |
1.00E+02 |
|
|
13 |
8192 |
9.369E+03 |
5.42E+02 |
9.03E+01 |
2.71E+02 |
|
|
14 |
16384 |
1.874E+04 |
1.11E+03 |
1.85E+02 |
7.28E+02 |
|
|
15 |
32768 |
3.748E+04 |
2.40E+03 |
4.00E+02 |
1.95E+03 |
|
|
16 |
65536 |
7.496E+04 |
5.17E+03 |
8.61E+02 |
5.21E+03 |
|
|
17 |
131072 |
1.499E+05 |
1.11E+04 |
1.84E+03 |
1.39E+04 |
|
|
18 |
262144 |
2.999E+05 |
2.36E+04 |
3.94E+03 |
3.68E+04 |
|
|
19 |
524288 |
5.997E+05 |
4.81E+04 |
8.01E+03 |
9.75E+04 |
|
|
20 |
1048576 |
1.199E+06 |
1.02E+05 |
1.70E+04 |
2.58E+05 |
|
|
21 |
2097152 |
2.399E+06 |
2.16E+05 |
3.59E+04 |
6.80E+05 |
|
|
22 |
4194304 |
4.798E+06 |
4.55E+05 |
7.58E+04 |
1.79E+06 |
|
|
23 |
8388608 |
9.596E+06 |
9.57E+05 |
1.59E+05 |
4.71E+06 |
|
|
24 |
16777216 |
1.919E+07 |
1.94E+06 |
3.23E+05 |
1.24E+07 |
Table 1 This table details spread and clustered settling times and filter characteristics. Multiply the R·C / T term by the desired spread PWM clock period T to obtain the product of the resistance and capacitance of the first order analog filter (see Figure 4).
To avoid large settling times, recall the option of operating a most significant and a least significant 8-bit PWM simultaneously and adding their outputs as seen in Reference 2. A filter with a 16-bit settling time can be swapped for one with a much shorter 8-bit settling time. Should you want even more resolution, use this concept to add a third PWM.
All this being said, read on for some important sequence characteristics and how best to implement k-bit spread PWMs where k = 1, 2, 3… 24.
Clustered-bit PWM sequencesClustered-bit PWMs’ NO ones and NZ zeroes each appear in contiguous streams. An example of a waveform for such can be seen in Figure 2. Most microcontrollers can implement these with no software overhead. Just “set ‘em and forget ‘em”: specifically, program the count (NO – 1) after which a one-to-zero output transition is to be produced, and the count (N – 1) after which the counter returns to 0 and the output to a one. The PWM goes on its merry way with no further intervention necessary from executable code unless a change in the value of the duty cycle DC is required.
8 and 16-bit counters are typically available, and so DC values of A / B can be had for any integers such that 0 ≤ A ≤ B ≤ either 28 or 216, respectively. Typically, these counters can be clocked from the same high frequency clock source used to execute the microprocessor instruction set. This is useful because in general, the higher the frequency, the shorter the settling time of the filter needed to suppress the ripple.

Figure 2 This plot is of a clustered-bit PWM where NO = 16, N = 256, and T = 1uS.
Another type of PWM produces the same number of ones and zeroes in a cycle, but spreads these binary values as evenly as possible. An example can be seen in Figure 3.

Figure 3 With this spread-bit PWM, NO = 16, N = 256, and T = 1uS.
Notice that lowest frequency of the spread PWM is far higher (16 times) than that of the clustered one. Accordingly, a faster-settling filter can be used to suppress the ripple. So what rule governs the positions of the ones and zeroes in the spread sequence? A very simple one.
Consider a parameter X which can take on the values 0, 1, 2… or N – 1. Y is periodically updated to the value of (Y + X) modulo N. If an update reduces Y, the PWM output is one; otherwise, it’s zero. The DC is X / N. This process has at least two important properties:
- The period of the PWM sequence is N. This can be shown by considering a parameter W upon which the process W = W + X is repeatedly performed (no modulus is involved in the W update.) If the initial values of Y and W were both C, then Y = (Y + X) modulo N and (W + X) modulo N would be equal after each process step. N steps later, W would be C + N X. For any X, (C + N · X) modulo N is C. Since the moduli of W and Y are always equal, C is also the value of Y after N process steps. And so for any X, the PWM sequence is periodic in N.
- To gain insight as to how spreading works, consider when X is 0. Y would never be reduced, and so there would never be a PWM output of one. If X were 1, the PWM would produce a one only once every N steps. If X were increased, there would be ones approximately (if not exactly) every N/X steps. As X approached N/2, the proportion of ones in the output would increase, but as long as X ≤ N/2, ones would never appear in succession. For X ≥ N/2, there would never be any zeroes in succession. And as X approached N, a reversed version of the aforementioned progression of ones would apply to the zeroes.
How might this process be executed on a basic 8-bit microcontroller? The simplest implementation would be to set N to 28 and periodically hijack a portion of the processor’s executable bandwidth to run the process. The following code implements a spread 8-bit PWM of duty cycle X / 28, where the value of X is in register r17 and that of Y is in register r16:
ADD r16, r17 ; r17 holds the value of NO which can be anywhere from 0 to 28-1. ; r16 is a simple accumulator which overflows periodically. ROL r20 ; The carry bit ( 0 or 1) from the prior addition goes to bit 0 of r20. OUT PORTB, r20 ; Bit 0 of the PORTB GPIO register takes on the carry bit value.Of course, you can include a few more instructions so that the other PORTB bits are unaffected. It’s important to note that this code must be executed regularly. Aperiodic, “jittery” execution will impact the accuracy of the filtered value of the output stream. This means that all non-PWM code must always take the same amount of time to execute, making interrupts on the processor problematic.
Want a PWM with more resolution? Place the following instruction after the existing ADD:
ADC r18, r19 ; r19 is the MSbyte of the input X and r17, the LSbyte.This additional instruction enables a 16-bit duty cycle of X / 216. It’s obvious how to further increase resolution by additional factors of 28 to obtain 224, etc.
The inputs of spread PWMs can range from X = 0, 1, 2… to N-1. But if N is limited to integral powers of 28, there’s a very big jump (a factor of 28) of sequence lengths between these options. That means a proportional jump in filter cutoff frequencies and, more importantly, in settling times. Fortunately, a finer range of selections is readily available. Simply limit the allowable values of X to those for which X / 2k is an integer, where k = 1, 2… log2(N)-1. The result is a (log2(N) – k) bit DAC.
The settling times of filters meeting the ripple suppression requirement are now available in increments of a factor of 2. Of course, a spread-bit DAC can have any integer value for N. But values other than 2k require additional code which must explicitly compare Y to N to generate a carry, and then conditionally update Y by subtracting N from it. Also, the spacing between successive values of X could vary unless all N possible input values were used. Perhaps a better approach would be to operate multiple PWMs simultaneously, whose outputs are weighted differently by a factor of 28. The relatively quick settling time of an 8-bit filter would be a benefit.
Analog filtersFor PWM filter designs, it’s necessary to determine the input-dependent output sequence whose ripple which is the most challenging for a filter to adequately suppress. As discussed in Reference 3, the worst case for a clustered PWM is a 50% DC. To achieve reasonable settling times (TS) to within an error VTS of 1/N while meeting the Vrip requirements of .5/N, a third order lowpass filter is employed. The structure of such a filter is seen in Figure 4. The referenced Design Idea offers a downloadable spreadsheet which designs filters to users’ specifications of PWM cycle frequency and of peak-peak ripple as a fraction of full-scale output. It was used to populate the settling time entries in Table 1 for the clustered PWM.
For the spread PWM, the worst case was determined by running simulations of all 256 output sequences of an 8-bit spread PWM applied to a first order filter (see Figure 4 again.) But what first order filter? To answer this question, I started by assuming (perhaps counterintuitively) that the worst case for ripple suppression occurs for 1 one, that is, when PWM input X = 1. (Since zeroes and ones are fully symmetric, this is equivalent to the case of 1 zero, or X = 255.) What will the ripple troughs and peaks look like for each input value at the output of a filter with a time constant selected to provide the necessary ripple suppression for X =1 only?

Figure 4 With these first and third order low-pass analog filter structures, the filters are buffered with op amps because their inputs employ resistors of high values. This is done to limit the errors imposed by the unequal resistances of the logic high and low outputs of ICs such as the 74AC04 which drive the filter inputs (Reference 4).
First we have to find that time constant. We start by writing equations for ripple starting at time t = 0. Here, R and C are the first-order filter components, and NO + NZ = N as before. The filter output is:
- V0 (immediately before a zero-to-one transition)
- V1 = V0·e-NO·T/(R·C) + (1 – e-NO·T/(R·C)) (immediately before the next one-to-zero transition)
- V2 = V1·e-NZ·T/(R·C) (immediately before the next zero-to-one transition)
in the steady state, after the filter settles from a change in duty cycle, V2 = V0. Solving:
- V₁ss = (1 − e-NO·T/(R·C)) / (1 − e-N·T/(R·C)) + 1/N (ripple peak)
- V₀ss = 1/N – (e-NZ·T/(R·C) − e-N·T/(R·C)) / (1 − e-N·T/(R·C)) (ripple trough)
- Vrip = V1ss – V0ss = (1 – e-NO·T/(R·C)) · (1 – e-NZ·T/(R·C) ) / (1 – e-N·T/(R·C) ) (peak – trough)
Setting V₁ss in #4 above to .5/N for N = 28 and solving numerically, a value of 291.5 is obtained for the unit-less term R·C / T. Setting V0SS in #5 to .5/N with R·C / T = 291.5 yields a smaller error than .5/N for the trough; the peak error is the larger of the two (tabulations of this term for a range of N values were calculated from #4 and appear in Table 1). In a simulation, T was set to 1uS, R to 1MegΩ and C to 291.5pF. Output sequences resulting from inputs from 1, 2… 255 were applied to an 8-bit spread PWM.
Figure 5 shows a graph verses the input X values of the maximum ripple deviations from DC and of half the peak-to-trough differences. It’s clear that the biggest error is associated with inputs both of 1 one and of 255 ones (1 zero). This filter time constant 291.5uS does indeed limit the deviation from the duty cycle of 1/N (1/256) to .5/N times the PWM’s full-scale output, one half of the PWM resolution, and an input of X = 1 does yield the worst-case ripple. For any clock period T, simply multiply the Table 1 unit-less parameter R·C / T by T to obtain the filter’s R-C time constant.

Figure 5 This graph shows the filter output deviations from DC in the steady state vs. input values of 1, 2… 255 for an 8-bit spread PWM. A 100mS wait was employed before measurements to ensure settling, more than 300 times the 291.5uS filter time constant.
It might be surprising that the worst ripple peaks are associated with a single one or zero in the output sequence. But a little thought reveals that a single pulse is the case where the lowest frequency f1 = 1/(N·T) Hz that the PWM can produce has the largest amplitude. Note that input values which are powers of 2 have the lowest maximum errors. This is in part because they have no energy at f1 Hz. I have spot-checked sequences of N-4096 and those for N < 256 and found an input of X = 1 to consistently produce the maximally deviant ripple.
Settling times of the spread PWM filterTired of the math by now? You ain’t seen nothin’ yet!
Because an analog filter is being driven by a digital sequence, difference equations can be used to calculate the filter output. The worst case for setting time is when the filter output at time t = 0 is DC = 1 (NO = 256) and the input transitions to NO = 1. Then:
- y[k] = a*y[k-1] + (1-a)*x[k], y[0] = 1, a = e-T/(R·C), k = 0, 1, 2…
where x[k] = 1 when k modulo N = 0, and 0 otherwise.
Ripple peaks occur when x[k] = 1 and troughs when k modulo N = N – 1 =255 (immediately before a peak.) We have:
- Yp[k·N] = ak·N + (1 – a)*(1 – a(k+1)·N) / (1 – aN), ripple peaks
- Yt[k·N – 1] = ak·N -1 + (1 – a)*(aN-1 – a(k+1)·N-1) / (1 – aN), ripple troughs
- yp_SS = (1 – a) / (1 – aN) steady state ripple peak
- ypp = (1 − a)(1 − aN−1) / (1 − aN) steady state p-p ripple
- k1st_peak = N * Ceiling [ Log { ( (2/N) · (1 – b) + a – 1) / (1 + (a – 2)·b) } / Log(b) ], b = aN
where k1st_peak is the smallest value of k for which all ripple peaks are less than 2/N.
It’s worth taking a look at what is going on for the worst-case ripple when N = 256. See Figure 6.

Figure 6 This graph represents data for a spread PWM with N = 256 and filter outputs starting at one (1 volt.) At time t = 0, the red trace reflects a change of input to X = 1 and the blue, an input change to X = 0. X = 1 takes longer to settle because it spends 1/N of its time with an input of one, whereas X = 0 spends all of its time with an input of zero.
From #12, k1st_peak is the smallest value of k for which ripple peaks y[k·N] are less than or equal to 2/N. In this case, that corresponds to k = 8·N at 2.048mS ( y[7·N] is slightly larger than 2/N.) Finally, #7 is used to iterate all integer values of k from 7·N to 8·N find the smallest value of k = kS (that is, the first time) for which y[k] and all subsequent values of y[k] are less than 2/N. The settling time is then T·kS. This procedure is used to populate in Table 1 the spread PWM settling times at various cycle lengths N for a 1MHz clock.
In conclusion…PWMs can be implemented by microcontrollers. For a clustered-bit PWM, no further intervention is required by the controller beyond the cycle length of a programmable counter and the latest value of DC. Typically, the counter can be advanced by the highest speed clock available to the controller. But for a spread-bit PWM, a supportive block of code consisting of multiple instructions must be executed periodically This must be done at consistently timed intervals if accuracy is to be maintained.
To allow the processor to perform other functions, these intervals, the effective period of the spread clock, can be quite long in comparison to those of the clustered-bit PWM. Longer clock periods lengthen the settling time of the filter needed to suppress a PWM’s ripple. Granted, the spread sequence has generally much less lower frequency energy than a comparably clocked clustered sequence and therefore can employ a faster settling time filter for ripple suppression. But in practice, microcontrollers cannot clock code-driven spread PWMs at the rates of clustered ones, which have inherent hardware support. Comparable resolution spread PWM filters generally take longer to settle than those of their clustered cousins when microcontrollers implement these PWMs.
It’s intriguing to consider that the spread PWM discussed herein can be considered to be a first order delta-sigma modulator (Reference 5). The overflow of the registers can be thought of as an accumulator which, when instead of overflowing, adds a value of -N to its input X. Modulators of order higher than the first can shift even more low frequency energy to higher frequencies, relaxing ripple-suppression requirements even more and reducing settling time. Most commercial implementations of such techniques replace analog filters with digital versions thereof which then drive conventional multi-bit DACs, all implemented on a single IC.
If our PWM types were to be implemented in hardware such as an FPGA, their clock rates could be identical. As per Table 1, at identical clock rates, some sequence lengths N would favor the spread PWM with a simple single R-C pair (first order) filter, and others which would favor the clustered PWM with its three-pair (third order) R-C filter. However, the spread PWM would also benefit by replacing its first order filter with a third order one, something I plan to discuss in a forthcoming Design Idea.
PWMs: the gift that keeps on giving!
References:
- Custom design PWM filters easily
- Ibid, Figure 3.
- Ibid
- Ibid, see the SN74AC04-induced errors section.
- https://www.ti.com/lit/an/slyt423a/slyt423a.pdf
Christopher Paul has worked in various engineering positions in the communications industry for over 40 years.
Related Content
- A nice, simple, and reasonably accurate PWM-driven 16-bit DAC
- Parsing PWM (DAC) performance: Part 1—Mitigating errors
- Parsing PWM (DAC) performance: Part 2—Rail-to-rail outputs
- Parsing PWM (DAC) performance: Part 3—PWM analog filters
- Parsing PWM (DAC) performance: Part 4 – Groups of inhomogeneous duty cycles
The post Implementing a DAC: The battle of the PWMs appeared first on EDN.
Hidden underflow in BF16 divider in mixed-precision FP designs

Floating-point computations dominate the landscape of all AI/ML compute but also in automotive, avionics and healthcare. While performance and compute errors dominated the landscape of floating-point design and verification, power optimizations forced designers to use non-standard precisions such as FP4, FP8, BF16, and so on. So, mixed precision computation has become prominent in modern-day design.

Figure 1 Here isa a sneak peek at floating point compute in AI designs. Source: Axiomise
However, a new paradigm of transprecision compute is also emerging. Tagliavini et.al captured this beautifully in their paper coining the term transprecision floating-point computing. According to the paper, transprecision computing is an area where “rather than tolerating errors implied by imprecise HW or SW computations, systems are explicitly designed to deliver just the required precision for intermediate computations”.
Mixed precision vs transprecision
Mixed precision and transprecision are closely related, but they are not the same thing. Mixed precision is mainly an algorithmic/use pattern; transprecision is a broader system and architecture paradigm. Mixed precision means using two or more fixed numeric formats within one algorithm or kernel. Transprecision goes further: it’s about designing the hardware, software, and algorithms so that the precision itself is a tunable resource.
In short, mixed precision is combining a few existing formats in one computation for performance/energy, with accuracy recovered by algorithmic tricks. And transprecision is an end-to-end paradigm where precision is a first-class, tunable knob, and the system supports many possible precisions (not just, for example, 16-bit/32-bit) to meet accuracy/energy goals.
The benefits are clear. Exploit lower precision where it’s safe, allowing better balance of performance and throughput, and lower energy consumption, thereby cooler chips, but maintain full-precision (higher) accuracy where needed. Specifically, formats such as FP16 and BF16 allow hardware to execute more FLOPs per cycle, often giving 1.5-3X speedups in deep learning workloads. Transprecision architectures can achieve multi‑x speedups by vectorizing and simplifying datapaths for small formats (for instance, 8-bit or 16‑bit “minifloats”).
Verification challenges
Mixed-precision and transprecision computing introduce substantial verification challenges because correctness is no longer tied to a single, well-understood format, but to a tapestry of interacting precisions, formats, and rounding behaviors across the pipeline. Mixed-precision and transprecision computing create a significantly harder verification problem than conventional floating-point design because correctness must be established not only within each individual format, but also across the boundaries between them.
In these systems, values may be computed, accumulated, converted, rounded, and stored at different precisions, so verification must account for interactions between multiple exponent ranges, mantissa widths, rounding modes, exception rules, and format-conversion paths rather than checking a single uniform arithmetic model. This increases the risk of subtle failures such as incorrect narrowing or widening behavior, loss of precision at format boundaries, inconsistent NaN and infinity propagation, mismatched exception flags, non-equivalent fused and non-fused results, and corner-case errors involving subnormals, saturation, or directed rounding.
The challenge is amplified further in configurable or transprecision FPUs, where the same hardware datapath may serve several formats and custom numerical types, making it easy for implementation shortcuts or shared logic to satisfy one format while violating the architectural intent of another.
As a result, effective verification of mixed-precision and transprecision designs requires more than numerical result checking: it demands format-aware reference models, carefully targeted boundary-case stimulus, cross-format property checking, and systematic validation of rounding and exception behavior under every supported precision configuration. The challenges of microarchitectural implementation are too many to capture here so we will defer to these for a separate blog, but pipelined implementations offer an interesting cross-dimensional challenge for verification.
Traditional verification methods
Simulation-based verification, whether directed or constrained-random, is inherently inadequate for mixed-precision and transprecision floating-point designs because it can exercise only a vanishingly small fraction of the enormous input and state space. Moreover, it’s biased toward scenarios that verification engineers think to test.
Even with sophisticated UVM environments and large regression farms, most tests focus on typical operating ranges and a limited set of corner cases, leaving huge gaps around precisely those conditions where multiple formats interact: operands that sit exactly on format boundaries, rare combinations of subnormals with different exponents, intricate sequences of narrowing and widening conversions, or subtle interactions between fused operations, rounding modes, and exception flags.
Many of the most damaging floating-point bugs historically have come from such corner cases that were numerically benign for most inputs but catastrophically wrong for particular patterns that simulation never hit. In a design that supports several precisions and custom formats, the number of distinct cross-format behaviors quickly explodes, making it practically impossible to gain real confidence from coverage metrics alone. That’s because hitting each branch or bin does not guarantee that all critical numerical combinations and flag behaviors have been validated.
Formal methods-based solutions
Formal verification, in contrast, can reason symbolically about entire classes of inputs and states at once, proving that key arithmetic, rounding, and exception properties hold for all operand values and all supported format combinations within a given block, and thus is uniquely positioned to close the coverage gap that simulation-based methods cannot realistically bridge. However, while C-to-RTL equivalence checking has been in use for many years to establish formal equivalence through proofs, deploying formal methods on direct pipelined implementations of RTL is not easy with C-to-RTL based tools.
What we need is a homogeneous architecture whereby we can reason about correctness of RTL micro-architectural implementation directly using a golden reference implementation in SVA, exploiting the abstraction-based techniques in property checking. This is why we built floatrix.
It’s an app offered as part of the axiomiser platform that can be automatically configured at runtime through a GUI to verify a range of FP precision formats through proofs obtained by exercising custom SVA properties on actual designs implemented in Verilog or VHDL requiring minimal human interaction; and most importantly requiring zero model minimization that is the norm in any C-to-RTL based formal equivalence checking solutions.
SVA models used in floatrix have been goldenized against the Berkeley Hardfloat models for IEEE-754 compliance. For non-standard precisions, we follow the reference guides of the implementation to adapt the models.
We have deployed floatrix on several designs since its launch in September 2025. We continue to find interesting bugs. Recently, we identified a tinniness issue on the FPU used by the OPENHW group. The Github ticket has more details.
In this article, we describe an interesting bug we caught in floating-point dividers found in the fpnew design (again part of the OPENHW group), using our floatrix app. In the next section we describe the bug itself and then we elaborate on its significance, and whether bugs like these are likely to happen in other designs. Our analysis covers the broader scope of what happens with designs in mixed-precision format, and gaps in verification causing these bugs to be missed in the first place.
Details of the bug
Before we describe the bug, let us capture some of the basic definitions.
Inexact flag: Raised when the rounded floating-point result is not equal to the mathematically exact result, meaning some precision was lost in rounding (this can accompany normal, overflowed, or underflowed results).
Underflow flag: Raised when a non-zero mathematical result is so small in magnitude that, after rounding to the target format, it becomes tiny (typically subnormal or zero); under IEEE‑754’s default rules, this is signalled only when that tiny result is also inexact.
Scenario
The inexact and underflow flags should be set if the unbound exact result (out of format) is 1×2-140 and the bounded result should be 16’h0000. Moreover, in the case of rounding up, the expected result should be 16’h0001. However, in FPnew, the result is always 16’h0000 with no exception flags raised.
Root cause
Root cause might be from performing the operations using single-precision arithmetic and then converting back to BF16.
Detection methods
The bug was caught using the floatrix underflow flag checks.

Figure 2 Waveform shows the special underflow case in division. Source: Axiomise
Why this class of bug is realistic?
Bugs like this can happen in real designs, especially in floating-point units that mix internal higher-precision arithmetic with lower-precision output formats such as BF16.
A bug like this reflects a common implementation pattern where the datapath computes in a wider internal format, such as FP32, and then converts or packs the result into a narrower format. If exception logic is tied only to the internal format and not to the final target format, the design can silently produce a numerically plausible output while missing required flags.
This is especially plausible in trans-precision designs. BF16 has the exponent range of FP32 but much less precision, which makes conversion-stage edge cases more common. A value can be representable or exact internally yet still underflow or become inexact when rounded to BF16. If the final conversion step is treated as a formatting step instead of a full IEEE-aware operation, underflow and inexact can be lost.
Reuse of a FP32 datapath for BF16
Modern fpu designs may implement a single “main” datapath (often FP32) and derive lower-precision results (BF16) by:
- Computing in FP32
- Rounding/packing down to the architectural format
For this bug, it means:
- The internal FP32 computation is perfectly normal and may produce a small, exact, subnormal value.
- Because that internal value is exact, the FP32 underflow and inexact logic quite reasonably decides “no underflow, no inexact”.
- If the design then blindly packs to BF16, the BF16 representation of that exact value can be 0x0000 or 0x0001, which is architecturally tiny and inexact from the BF16 point of view, but no new flags are generated.
So, the specific condition “exact subnormal in FP32, non-representable in BF16” is not rare; it’s exactly what you get whenever BF16 sees the far tail of the FP32 subnormal range.
Flag logic attached to the wrong format
In a typical implementation:
- The main datapath correctly implements all rounding modes in FP32.
- The BF16 path is implemented as a simple truncation, or as a hard-coded “round-to-nearest-even” micro-operation, ignoring the global rounding-mode control.
For this bug, that architectural decision has a precise consequence:
- Underflow and inexact are defined with respect to the architectural result format and rounding (here BF16, with “tininess after rounding” for RISC‑V BF16).
- If flags are tied to the internal FP32 representation, any case where FP32 is fine but BF16 underflows will be mis‑flagged.
The bug is therefore a very plausible pattern and can occur in other kinds of FP implementations because it reduces duplication of flag logic but is architecturally wrong for BF16 arithmetic.
RISC‑V BF16 underflow definition vs implementation shortcut
RISC‑V BF16 explicitly says:
- Tininess is detected after rounding.
- Underflow is signalled only when the result is both tiny and inexact.
- The tininess detection itself conceptually uses rounding as if the exponent were unbounded in the target format.
A shortcut implementation for BF16 in a FP32-based unit often does:
“Let the FP32 unit compute and round; then chop its bits down to BF16.”
For this bug, perhaps that shortcut misses exactly this:
- “Tiny and inexact” must be interpreted in BF16, not in FP32.
- A result can be “non-tiny and exact” in FP32, yet “tiny and inexact” in BF16.
So, the focused risk factor is not generic underflow subtlety; it is the temptation to reuse the FP32 tininess logic instead of implementing BF16-aware tininess-after-rounding. That shortcut directly creates the buggy behavior.
Directed rounding applied only at the FP32 level
This case also involves a mode where “round to max” (or analogous directed rounding) should drive the BF16 result from 0x0000 to 0x0001. We suspect, this leads to:
- FP32 sees the tiny result as exact, so the rounding mode does nothing interesting at that level.
- BF16 should use the rounding mode to decide between 0x0000 and 0x0001, but the conversion block ignores it.
- Consequently, the result is always 0x0000, and the flags never see the inexact/tiny condition.
So, the specific vulnerability of rounding-mode control is not propagated into the BF16 block, yet the ISA treats the BF16 operation as architecturally rounded in that mode.
Verification gaps specific to this pattern
For bugs like these to escape into silicon, we imagine that two very concrete verification gaps typically exist:
- Format-mismatch in checkers: The reference model or scoreboard checks only the numeric value in FP32, or it narrows in the same way as the RTL (for example, using a float32‑>BF16 helper that also ignores flags), so it cannot see that BF16 flags differ from the spec.
- Lack of subnormal+narrowing directed tests: Random and ISA-level tests hit plenty of BF16 arithmetic, but almost nothing in the region where:
- The true value is representable as a tiny FP32 subnormal.
- That value is below the BF16 subnormal range.
- The rounding mode is a directed one that should change 0x0000 to 0x0001.
These are not generic underflow issues; they are exactly the missing cases needed to expose flags generated in a wider format, and then silently narrowed.
Other similar bug patterns
This bug fits into a broader family of real floating-point design bugs:
- Flag-silent narrowing conversions: FP32 to BF16 or FP32 to FP16 loses information, but the design fails to raise inexact or underflow.
- Wrong rounding-mode application: The internal result is correct, but the final conversion stage ignores directed rounding such as round-toward-positive or round-to-max.
- Fused/non-fused mismatch: FMADD produces different flags than a mathematically equivalent MUL followed by ADD because the implementation handles flags at the wrong stage.
- Flush-to-zero leakage: A supposedly IEEE-compliant path accidentally behaves like flush-to-zero in one stage, especially for subnormal intermediates.
- Tininess detection mismatch: The design effectively uses one tininess rule internally and another assumption in verification or architectural expectations.
These are all realistic in designs that support multiple formats, configurability, or internal reuse of a higher precision datapath.
Practical impact
The practical impact of these kinds of bugs can be profound, even if the affected values are tiny. In many applications, the numerical difference may seem small, but the bug still matters because:
- Exception flags may drive diagnostics, fallback logic, or compliance tests.
- Image, DSP, and ML pipelines can be sensitive to repeated bias near zero.
- Safety or standards-driven environments care about architectural correctness, not just approximate numeric usefulness.
Why formal models for floating-point designs
Mixed-precision and transprecision floating-point designs offer compelling benefits in performance, power, and area, but they also amplify the risk of subtle correctness issues that are extremely hard to detect with traditional simulation-based verification alone.
The bug analyzed in this article illustrates how easy it is for architectural intent to be violated when arithmetic is performed in a wider internal format, flags are generated with respect to that format, and the final narrowing step is treated as a “mere” formatting operation rather than a first-class floating-point transformation with its own rounding and exception semantics.
This pattern is not unique to a single core or vendor; it’s a natural by-product of reusing FP32 datapaths to implement BF16, separating execution, rounding, conversion, and flag generation, and relying on checkers that mirror the same implementation shortcuts. More generally, the same structural causes can lead to a family of related failures: flag-silent narrowing conversions, incorrect application of directed rounding modes, inconsistencies between fused and non-fused operations, flush-to-zero leakage in ostensibly IEEE-compliant paths, and mismatched tininess rules between specification, design, and verification.
Addressing these challenges requires a shift from “best-effort” simulation to exhaustive, property-driven reasoning. By using format-aware formal models, such as those provided by floatrix, it becomes possible to prove that rounding, underflow, overflow, and flag behaviour are correct for all operands and all supported precisions, and to expose bugs that would otherwise hide indefinitely in rarely exercised corners of the state space.
Nicky Khodadad is senior solutions engineer at Axiomise.
Nguyen Vu is formal verification engineer at Axiomise.
Ashish Darbari is Founder and CEO of Axiomise.
Related Content
- Hardware-based floating-point design flow
- Implementing floating-point DSP on FPGAs
- Floating-Point Data in Embedded Software
- How to create fixed- and floating-point IIR filters for FPGAs
- Understanding Peak Floating-Point Performance Calculations
The post Hidden underflow in BF16 divider in mixed-precision FP designs appeared first on EDN.
Dissecting an active Ethernet splitter

Need just one more network port than you’ve currently got available (often: none)? A splitter can do the trick; just spend a few extra bucks to make sure you’ve made the right pick.
I’ll begin this teardown with an analogy. Imagine you’re grilling weekend hamburgers for the family. After the patties are cooked (medium-rare, of course), you slot them in buns and load them up with per-recipient preferred extras—lettuce, pickles, tomatoes, onions, mustard, and the like. The one condiment everyone wants is catsup (of course, again). But then you belatedly realize that there’s not enough of the tomato-derived sauce left in the bottle for everyone; specifically, one of the kids is about to be catsup-deprived.
Obviously, this just won’t do. But if you run to the store for more, the food will be cold by the time you get back. Plus, everyone’s already starving. And none of the neighbors, specifically those that you know well enough to even think of knocking on their doors and asking to borrow some of their catsup, are home. But then you remember the spare catsup packets from a recent take-out meal, jammed in the back of the refrigerator. An imminent condiment crisis is averted!
Or take this one. Your four-cylinder car is already paid off, in solid cosmetic condition and (mostly) equally great functional shape. But it just doesn’t have the “get up and go” that you’re now looking for. You could finance a more powerful replacement. But assuming you could even find someone to sell your existing vehicle to, or a dealer willing to take it in trade, you won’t get what you think it’s worth. And did I already mention that the one you already have is debt-free?
But then you realize you’ve only been putting regular (vs premium-octane) gas in it all this time. And/or that it’s been a while since you’ve taken it to the shop for a spark plug swap and broader tune-up. And/or maybe just that its tires are underinflated, or your trunk is overfilled. Rectifying these shortcomings transforms your existing vehicle, making it sufficiently spunky such that you can shelve the alternative of a replacement, keeping money in your pocket in the process.
An RJ45 in every portWhat’s this all got to do with technology, specifically with Ethernet splitters? Well, multi-port Ethernet switches commonly come in the following configurations:
- 5-port
- 8-port
- 16-port
- 24-port
- 48-port
(10- and 12- port models, and other variants, also exist but are less common and therefore tend to be much more expensive on a per-port basis).
What happens if, as I’ve repeatedly experienced over the years, I have an eight-port switch already in service and fully populated, but then add another wired Ethernet device to my LAN (for example, another NAS)? This leaves me needing one more port, but I don’t have any available spares. I could:
- Replace the 8-port switch with a 16-port successor: an expensive transition proposition that also leaves me with a perfectly good but now-unused 8-port switch predecessor, or
- Add a separate 5-port switch to the mix, connected to the original 8-port switch using a short span of Ethernet cable. While this is more economical than the prior approach, it “wastes” a port on both switches, dedicated solely to the interconnect between them, plus it takes up more space on the networking equipment shelf (along with another power strip spot).
But there’s a third option, which I’ll be analyzing today. It’s a splitter, most commonly found in 1:2 ratio variants such as today’s dissection victim, although larger configurations are also available at least in active, versus passive, splitter form. What’s the difference? Passive splitters, as their name suggests, are unpowered (I’m also assuming here that they’re not self-powered, specifically via PoE). They’re also quite inexpensive, as this $8.99-total pair of them exemplifies:

Alas, they’re not a perfect panacea. Not even close. In this particular implementation case, notice the “(Can’t Run Both at The Same TIME)” qualifier right in the product title, conceptually replicated in another stock image, although the embedded verbiage muddies the waters as least as I’m interpreting it:

What’s basically going on with this particular implementation of the concept (with thanks to a knowledgeable Amazon reviewer, whose graphics I’m “borrowing”) is that the eight Ethernet wires flowing into one end of the splitter are duplicated at both connectors on the other end:

The upside? From a performance standpoint, both split-end (see what I did there?) connectors use all eight original-end wires (hold that thought). The downside? If you plug active devices into both “split” connectors at the same time, neither of them will go online. Not to mention all the short-circuiting going on between all three devices mated to the splitter, which should instead be called a duplicator (or maybe an overly complicated and potentially tragic coupler).
In the other implementation of the concept, which as my Amazon reviewer friend points out, often looks identical from the outside, four of the eight original-end connector wires go to one split-end connector, with the other four going to the other.

There are upsides to this variant approach, potentially. No short circuits, for one thing. And depending on how the wiring is handled at the other end of the cable plugged into the splitter’s original-end connector, gear plugged into both split-end connectors may be able to coexist. But since each of them is only using four wires of the total eight-wire strand, they’re each restricted to 100 Mbps peak bandwidth, since GbE connectivity requires the use of all four two-wire sets.
Active rationalizationPowered (active) splitters are the real deal. Essentially, they’re mini-switches, with a subset of the total number of connectors found in a “true” five-port (or larger) switch. Take today’s Goalake 2:1 patient, for example, which set me back only $6.49 post-35%-off-promotion when I bought it from Amazon in December 2024.

Along with its 3:1 sibling, which I’d purchased at the same time for only $9.09.

No inter-device packet collision issues, plus full GbE bandwidth to both “split end” devices, albeit subdivided between them if they’re concurrently transmitting or receiving.

With the stock image out of the way, let’s now look at the “real thing”, starting with box shots accompanied by a 0.75″ (19.1 mm) diameter U.S. penny for size comparison purposes, as usual.






Open ‘er up, and inside you’ll find a slip of paper up top:

with the rest of the goodies below:

Extras first, also including a USB-A to USB-C cable, whose purpose you’ll see shortly:

And now for our patient, initially translucent-swathed:

And now “unclothed”:


This side you’ve already seen in the “stock” image:

These two are, like the bottom, bland:


And this one explains why the aforementioned included USB cable exists:

It’s for the USB-C incoming power connection:

To my earlier “takes up more space on the networking equipment shelf (along with another power strip spot)” crack, this device in contrast is pretty tiny (58.1 mm x 23.4 mm x 62.8 mm). And although you could plug the USB-A end into a dedicated “wall wart”, the power requirements (5V@1A) are low enough that you could instead leverage an already-available and otherwise-unused USB connector coming out the back of a nearby NAS or UPS, for example.
Unsurprising (and highly integrated) innardsTime to get inside. You probably already noticed the four screws, two on each end. And you probably already guessed what comes next:

Turns out, I didn’t necessarily need to remove both ends’ plates; I could slide the PCB out either:




Oh well…nothing wrong with being thorough:
Note the lingering glue on the inside-chassis slot, to hold the PCB in place as originally installed:

Speaking of which, not much of note on this PCB side, save for more glue remnants and the fact that the manufacturer went with multiple smaller LAN transformers per-connector versus one unified per-connector alternative, as I’ve seen in other wired Ethernet-inclusive products.
The other side’s more interesting, albeit only a bit, reflective of the minimized bill-of-materials cost for this low-priced device.
That thermal pad presses up against the lower half of the (aluminum, I presume) chassis when the PCB is in place. Let’s see what’s underneath:
Surprise, surprise (not)…an Econet (later merged with Airoha Technology, both subsidiaries of MediaTek) EN8850DHE five-port switch with embedded 10/100/1000Base-T PHY!
That’s all I’ve got for you today. Reader thoughts are as-always welcome in the comments!
—Brian Dipert is the associate editor, as well as a contributing editor, at EDN.
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- Malfunctioning Ethernet cable comes up short
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- Modern UPSs: Their creative control schemes and power sources
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EAS tags: The invisible backbone of retail security

In the world of retail, security is not always about cameras or guards; it’s often about technology you barely notice. Electronic article surveillance (EAS) tags are a prime example: small, lightweight devices that quietly safeguard billions of dollars’ worth of merchandise every year. Their strength lies in simplicity; an elegant mix of materials science and signal engineering that creates a reliable deterrent against theft.
For engineers and technologists, EAS tags are more than just retail accessories; they are a case study in how discreet design and robust physics converge to solve a persistent, real-world problem.
Principle of operation: Resonance and detuning
EAS tags are built on the physics of resonance. In RF systems, tag’s circuit is tuned to the frequency of the detection gates, producing a clear signal when energized. Acousto-magnetic (AM) systems rely on magnetostrictive strips that vibrate under alternating magnetic fields, creating a distinct response. In both cases, the tag’s resonance or detuning is what makes it detectable—a simple but elegant exploitation of electromagnetic behavior.
Detection gates: Antennas at the exit
The tall panels at store exits are more than just barriers; they are antennas transmitting and receiving fields. As a tag passes through, it interacts with these fields, altering the electromagnetic environment in a way the system recognizes. That interaction—a resonant “signature”—is what triggers the alarm. Without it, the gates remain silent, underscoring how precise the tag–antenna relationship must be.
The shielding challenge: Countering the Faraday cage
While EAS systems are robust, they face a persistent challenge from tag shielding, a technique where shoplifters use “booster bags” lined with conductive materials like aluminum foil. This creates a Faraday cage—a metal barrier that blocks the electromagnetic or magnetic fields from reaching the tag, preventing it from resonating or “talking” to the detection gates.
Because the tag’s signal cannot penetrate the shield, the system remains silent even as the item passes through the antennas. To counter this, modern engineering has introduced metal detection sensors within the antennas that trigger an alert when a large volume of metal is detected, ensuring the system isn’t bypassed by simple physical interference.
Ink security tags: Benefit-denial strategy
Developed in 1984, ink security tags feature an ampoule of indelible dye that ruptures and seeps into a product when tampered with, rendering the stolen item useless. This benefit-denial strategy has since evolved to work alongside EAS, combining electronic monitoring with a visible deterrent that discourages thieves from attempting removal.
Modern designs integrate ink ampoules directly into EAS housings, available in both AM and RF frequencies to suit all common systems, while ink dye pins can also be added to existing tags as an extra layer of protection.
Types of EAS tags
Retailers deploy different tag formats depending on the product and security need. Hard tags are the familiar plastic housings with locking pins, designed to be durable and reusable. They’re common on apparel and electronics, where reusability offsets cost. Soft labels are adhesive-backed and disposable, often hidden in stickers or packaging. These are ideal for books, cosmetics, and boxed goods, where speed and convenience matter.
Finally, specialty tags are engineered for unique shapes or high-value items—think liquor bottles, eyewear, or luxury accessories. Their design ensures protection without interfering with the customer’s ability to handle or try the product.

Figure 1 Composite image captures a black RF security hard tag pinned to jeans, a second detached tag with its metal pin exposed, and a white rectangular AM soft label marked with a barcode pattern. Source: Author (composite); individual images belong to their respective producers
Deactivation vs. removal: Two paths to clearance
Checkout counters handle tags in two distinct ways. Soft labels, often hidden in stickers, are electronically deactivated by disrupting their resonant circuit. Once deactivated, they no longer respond to the exit gates.
Hard tags, however, are mechanical devices locked onto the product. These require a physical detacher to release them, ensuring they can be reused. The dual approach reflects retail priorities: speed for disposable labels, security and sustainability for reusable tags.
Engineering behind the scenes
The effectiveness of EAS systems rests on careful engineering choices. Materials science plays a central role: ferrite cores and resonant circuits are tuned for reliable response, while adhesives ensure soft labels stay in place without damaging products. Signal processing is equally critical, with systems designed to operate within specific frequency ranges, reduce false alarms, and manage interference from other electronics.
Finally, engineers face constant design trade-offs: balancing cost, durability, and detection reliability. A tag must be inexpensive enough for mass deployment, rugged enough to survive handling, and precise enough to trigger only when it should. This interplay of physics, electronics, and economics is what makes EAS technology both ubiquitous and invisible in everyday retail.
EAS tag frequencies: RF vs. AM
The performance of EAS systems hinges on their operating frequencies. RF tags typically resonate at 8.2 MHz, making them cost-effective and widely used for general merchandise. Acousto-magnetic (AM) tags, by contrast, operate at 58 kHz, using magnetostrictive strips that vibrate under alternating magnetic fields to deliver stronger detection in environments with metal shelving or foil packaging.
These frequency choices are deliberate: RF systems provide scalable protection for everyday goods, while AM systems excel in challenging conditions, reducing false alarms and ensuring consistent reliability. Frequency engineering, in short, is what makes EAS technology both practical and precise in modern retail.

Figure 2 8.2-MHz RF tags display the internal resonant coil structure and the standard barcode-printed adhesive backing. Source: Author (composite); individual images belong to their respective producers
Dual-frequency and RFID integration
Dual-frequency EAS tags combine AM (58 kHz) and RF (8.2 MHz) technologies into a single housing to ensure universal compatibility across different retail security systems, regardless of which hardware a specific store uses. This makes them the gold standard for source tagging, where manufacturers apply the security tags during production rather than at the store; because the tag is “universal,” the manufacturer can ship the same protected product to any retailer worldwide without worrying about system compatibility.
By further integrating RFID into this setup, the tag evolves into an all-in-one solution that not only triggers exit alarms to prevent theft but also provides item-level data for real-time inventory tracking and supply chain visibility from the factory floor to the point of sale.

Figure 3 This dual-technology label integrates a UHF RFID inlay and an EAS tag to provide item-level tracking and secondary loss prevention for retail apparel. Source: Avery Dennison
Just to clear the mist…
At the core of the above dual EAS technology lies the NXP UCODE 9 chip, a high sensitivity “brain” engineered to deliver superior read ranges and maintain stable signals even under physical interference or shifting environmental conditions. Operating within the global ultra-high frequency (UHF) band of 860–960 MHz, it ensures seamless tracking across international regulatory standards, enabling long-range detection far beyond the proximity limits of standard “tap-to-pay” systems.
Data management is anchored by a 96-bit Electronic Product Code (EPC) memory, a rewritable digital barcode for precise item identification, complemented by a 96-bit Tag Identifier (TID). This TID serves as a permanent digital fingerprint, factory-locked with a 48-bit unique serial number that provides hardware-level authentication and protection against counterfeiting—an identity that cannot be duplicated or altered.
Smarter EAS for modern retail
The evolution of EAS technology is not just about new features; it’s about reshaping retail practice. As mentioned before, source tagging embeds protection at the point of manufacture, streamlining store operations and ensuring every item arrives shelf-ready. Likewise, integration with RFID merges theft prevention with inventory intelligence, giving retailers real-time visibility into stock while safeguarding assets.
Smarter systems, powered by AI-driven analytics, further reduce false alarms by distinguishing genuine threats from background noise. The practical results are clear: shrink reduction delivers measurable savings, customer experience improves through unobtrusive security, and operational efficiency rises with reusable tags and scalable systems. Together, these innovations transform EAS from a silent guard at the exit into a strategic enabler of modern retail.
The harmonic handshake: Integrating EM physics and DSP intelligence
Modern electronic article surveillance systems achieve reliability through the sophisticated interplay of electromagnetic (EM) physics and digital signal processing (DSP).
EM tags, built around high-permeability amorphous metal, generate a distinctive non-linear magnetic response when exposed to a low-frequency interrogation field (typically between 10 Hz and 1 kHz). Thin, durable, and capable of indefinite activation or deactivation, these tags remain the gold standard for high-security applications such as libraries and pharmaceuticals. Yet the low-frequency spectrum they inhabit is increasingly crowded with electronic noise.

Figure 4 These adhesive electromagnetic strips integrate seamlessly into book gutters for discreet security. Source: The Library Store
Here the DSP becomes the system’s discerning ear, applying advanced algorithms to isolate the harmonic signatures produced by the EM strip. By analyzing the timing and ratios of these harmonics—especially the unique “spikes” created as the tag’s magnetic material reaches saturation—the DSP can instantly distinguish a genuine tag from background interference like power lines or moving metal doors.
This synergy preserves the physical strengths of EM technology, including detection through foil and ease of concealment, while adding digital intelligence that virtually eliminates the false alarms once common in legacy analog systems.
From security tags to ambient intelligence
The humble EAS tag is no longer just a one-bit alarm. It’s evolving into the foundation of ambient IoT—a world where everyday objects speak digitally without batteries or costly processors. By merging chip-free EAS principles with conductive inks and AI-driven signal processing, we’re entering the age of computational matter. Imagine a cereal box that not only sets off a gate alarm but also tells a recycling sorter what it’s made of and quietly alerts your smart kitchen when it’s nearing expiration.
And this isn’t just theory—it’s a call to action. For makers, the playground now includes conductive filaments and paints, where a 3D-printed resonator might shift frequency when bent or a touch sensor could be embedded directly into a wooden desk. For engineers, the challenge lies not only in faster chips but in mastering signal-to-noise ratio using machine learning to extract meaning from the messy electromagnetic echoes of chipless tags and designing packaging tech that’s as recyclable as the cardboard it’s printed on.
The future of IoT isn’t merely connected—it’s ambient, invisible, and accessible. Whether you’re hacking RF readers or sketching with graphene ink, remember that sophistication isn’t measured in transistor counts, but in achieving the most with the least. Keep tinkering, keep questioning, and let’s weave an internet into the very fabric of our world.
T. K. Hareendran is a self-taught electronics enthusiast with a strong passion for innovative circuit design and hands-on technology. He develops both experimental and practical electronic projects, documenting and sharing his work to support fellow tinkerers and learners. Beyond the workbench, he dedicates time to technical writing and hardware evaluations to contribute meaningfully to the maker community.
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- Transforming a Smartphone Design into a Sophisticated POS Terminal
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Stress analysis

Sometimes, getting true stress levels can be tricky because things happen that are sneaky.
Stress analysis is often required to confirm that a designed product will perform properly in hazardous environments. Rather than trying to ascertain a “mean time between failures” (MTBF) or a “mean time to repair” (MTTR), the required assumption can also be that failure is simply unacceptable, no matter what, with the further assumption that repairs will simply not take place. For example, when spacecraft are sent out, they usually had better just work…period.
Among the tools that can be brought to bear toward that end, we have MIL-STD-975M (NASA), in which derating guidelines are given for all kinds of electronic parts. If your components all operate within stress limits as defined in that document, it will be assumed that your product will function as required after having been launched.
Sometimes though, getting true stress levels can be a bit tricky because sneaky things can happen, as in the following case study. It exemplifies the following lesson: when doing a stress analysis on the components that have been incorporated into a product, don’t overlook the possibilities of transient conditions. Your design might not be as safe and secure as you think.
Imagine we have a half-bridge switch mode inverter. We can make a very simple SPICE model for it and see what happens when the circuit is first energized.

Figure 1 A simple SPICE model for an also-simple circuit shows what happens when it is first energized.
L1 and R3 are a crude model of the primary winding of a loaded inverter transformer. We look at the voltage excursion that capacitor C1 undergoes when the circuit is first energized and see that the voltage there follows an under-damped wave shape.
Even though the final value of the C1 voltage is headed for half the rail voltage (minus just a little bit of that half to account for switching losses), there is a momentary voltage excursion that goes to a positive peak which is well above that final settling point.
Excerpting from MIL-STD-975M, we find the following.

Figure 2 These excerpts from MIL-STD-975M are relevant to the example half-bridge switch mode inverter circuit.
Taking one particular CLR81, 220 µF capacitor whose nominal voltage rating is 75 volts, if we apply the derating requirement of 0.4, we have an allowable maximum voltage of 75 x 0.4 = 30 volts.
If we are so blithe as to say that C1 will have 14 volts across itself, we will find a stress level of 46.7%, but what we really have is a peak excursion during power-on rising to 21.451 volts, which means a stress level on C1 of 71.5%. We will still be okay, but we will have significantly less of a safety factor to the maximum stress level than we might have originally thought.
Sneaky stuff like this could result in you overlooking an over-stress condition. It is therefore important to consider every circumstance, from stead-state service to any kind of transients to which your designed product’s components may (or maybe more accurately, will?) be subjected.
John Dunn is an electronics consultant and a graduate of The Polytechnic Institute of Brooklyn (BSEE) and of New York University (MSEE).
Related Content
- Semiconductor Reliability and Quality Assurance–Failure Mode, Mechanism and Analysis (FMMEA)
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- Electronic Components Derating – Made Easy
- Connector voltage stress, Part 1 and Part 2
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Google’s Pixel 10: Upgrading smartphones again
Just because generational device improvements aren’t in-your-face obvious doesn’t mean they aren’t sooner-or-later still tangibly impactful.
As mentioned last week, one of the perks that accompanied my recent personal-cellular-line transition from AT&T to Google Fi Wireless was a free (after two years’ service, albeit still notably discounted upfront) Pixel 10 smartphone, which I’d needed to press into service immediately in order to qualify for the various promotion discounts (this “stock” photo is of the “Indigo” colorway; as noted last week, mine’s “Obsidian”):
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As long-time readers may recall, I’ve been a (mostly) Google Pixel “daily driver” since mid-2017, across multiple product generations. And I’ve been specifically using a pair of Pixel 7s for the past three years. So, I feel a “bit” qualified to offer some observations and comparisons with past device experiences. Without further ado…
I’m not a power userWhat I’m referencing by means of this admittedly cryptic initial section header is the fact that although the Pixel 10, which I initially wrote about as part of my coverage of Google’s August 2025 multi-product launch event, has a three-generation-newer Tensor SoC inside it (the G5, versus the earlier G2), the performance differences aren’t strikingly obvious. at least to me. Not that they’re nonexistent, mind you; Google’s increasingly impressive AI “chops” are most evident at the moment in the handset’s computational photography capabilities. That said, I strongly suspect that AI’s effects will be comparatively even more broadly visible (both in their results, responsiveness and fundamental existence) with the passage of time.
To that point, the “bump” in RAM from the Pixel 7 (8 GBytes) to the Pixel 10 (12 GBytes) is likely at least as important as is bolstered inference processing “muscle” in delivering local AI enhancements, as it enables on-device deep learning models to be more comprehensive and otherwise robust than would otherwise be the case, delaying if not completely foregoing a performance- and power-sapping handoff to the “cloud” in the process. And if there’s one upside to today’s semiconductor memory shortages, it’s that it’ll compel Google’s and other organizations’ developers to make their models even more efficient (while retaining sufficiently high results accuracy) than might otherwise be the case.
Pleasantly pocketable and reliably chargeablePut the two phones side-by-side and you’ll realize that although the active screen dimensions and other high-level display attributes are identical (6.3” diagonal OLED with 1080 x 2400 pixel resolution, though the Pixel 10 variable refresh rate tops out at 120 Hz versus 90 Hz for the Pixel 7, for whatever that’s worth…), the Pixel 10 (at left in the following photos) is actually a smidge shorter and narrower, the result in part of bezel decreases, not to mention rounder:
- Pixel 7: 6.13 x 2.88 x 0.34 inches (155.6 x 73.2 x 8.7 mm)
- Pixel 10: 6.02 x 2.83 x 0.3 inches (152.8 x 72.0 x 8.6 mm)


That aside, the Pixel 10 has a higher internal battery capacity than its Pixel 7 forebear—4,970 mAh vs 4,355 mAh—and the foundry transition from Samsung to TSMC that accompanied the to-Tensor G5 SoC evolution also aspires to improve not only performance (decreasing the energy consumption necessary to complete a given task in the process) but also stored-electron efficiency, with the two factors combining to boost claimed battery life.
Speaking of battery life, a few words on charging. The Pixel 7 supports wired charging at up to a 21W incoming power payload and wireless charging at up to 12W with conventional Qi chargers or 20W with the pricey, seemingly no longer available 2nd-generation official Google Pixel Stand:

For the Pixel 10 family, there’s a new wireless charger, the magnet-augmented Pixelsnap (reflective of the magnet-inclusive and Apple MagSafe-reminiscent QI2 support now within the phones themselves), which supports 15W charging speeds with the baseline Pixel 10 and 25W for the high-end Pixel 10 Pro (both of which also support wired charging at 30W rates):
And even though, as with the Pixel 7, I still need to use a case that’s magnet-inclusive with the Pixel 10 to ensure sufficient “cling” strength to a charger or whatever else I’m striving to stick it to (or, depending on the circumstance, stick to it), MagSafe-tailored chargers now work with it, too. With the Pixel 7, charging reliability with magnet-based chargers such as my Belkin-based desktop:

and in-car setups:

was flaky at best, typically DOA with the magnet-augmented case but magnet-less foundation. Now, for whatever reason, it’s ironclad (I hope I haven’t jinxed myself by writing those words).
Optics upgradesSpeaking of computational photography, while the Pixel 7’s front camera did implement face recognition-based unlock support (for the first time since the Pixel 4), it was both too flaky and insufficiently robust in associated software support to be something I could rely on. Beginning with the Pixel 8 (therefore also including the Pixel 10), the implementation is not only faster but also more accurate and broadly robust, thanks to machine learning algorithm augmentation:
That said, it’s still reliant on the front visible light image sensor, dropping the Pixel 4’s Kinect-reminiscent and IR-derived structured light approach in the process, in an ironic contrast to the conceptually similar IR-based TrueDepth technique that Apple uses to this day with FaceID. As such, it doesn’t work great in dim light, and not at all in the dark; thankfully, Google has also seemingly improved its historically woeful fingerprint ID detection implementation as a backup in such situations. And there’s always also your PIN or other unlock sequence, after all…
One other camera-related note; in the earlier backs-of-phones images you might have noticed what appeared to be a third lens on the Pixel 10’s rear “camera bar”. Or maybe you’ve just noticed the increased prevalence of ultra-closeup pictures in my recent teardowns, ones specifically taken without the bulky multi-piece accessory I had to use previously:


Google refers to it as a 5X telephoto, and it’s admittedly nice for that, but its Macro Focus capabilities are what I’m lovin’ the most, right now at least.
Tying up loose endsI mentioned earlier in this piece, and have also mentioned previously, how much I appreciated the fact that Google extended support (not only security patches but also full O/S updates) for the Pixel 6 and 7 series from 3 to 5 years at the end of 2024. As such, they’ll remain reliable backup-at-least options in my smartphone arsenal for at least the next year-plus. That said, beginning with the Pixel 8 series, therefore also including both my Pixel 10 and Pixel 9a, support was further extended to seven years from initial release date. Nice.
One (very) minor downside, for which I have nobody but myself to “blame” since I knew about it before I pressed “purchase”, involves ultrawideband (UWB) support. Apple’s latest-generation AirTag trackers leverage not only integrated Bluetooth and Wi-Fi subsystems but also UWB capabilities to enable more precise location discernment. So too do advanced Android-friendly trackers such as Motorola’s Moto Tags, one of which currently resides on my teardown shelf:

This is all well and good, but there’s one key qualifier: tracker-based UWB is only meaningful if the connected device that’s doing the tracking also supports UWB. That gives a green light to the Pixel 10 Pro, but not my UBW-deficient Pixel 10. Oh well…First World problems strike again.
And speaking of Android friendliness, I’m ironically writing this piece one day ahead of Google I/O 2026, with my special-project coverage of it scheduled to be published weeks ahead of this piece. Google has already talked some about Android-centric stuff at least week’s (again, as I write this) Android Show I/O Edition, replicating a cadence tradition it did for the first time a year ago. I’ll be curious to see what else Android- and Pixel-related is unveiled tomorrow. And I hope it doesn’t obsolete what I’ve just written today in the process! I’ll see you all “on the other side”, where I as-always also welcome your thoughts in the comments.
—Brian Dipert is the associate editor, as well as a contributing editor, at EDN.
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- The 2025 Google I/O conference: A deft AI pivot sustains the company’s relevance
- Google I/O 2026: Agentic AI gets serious
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Windows APO delivers customizable spatial audio

Ceva’s RealSpace Elevate is a Microsoft-certified Windows Audio Processing Object (APO) that enables spatial audio for PC gaming headsets. Unlike OS-level solutions that offer limited differentiation or branded third-party applications that restrict customization, the production-ready APO gives OEMs full control over performance and product identity. This includes customizable tuning and presets optimized for gaming and entertainment use cases such as music, movies, and podcasts.

Leveraging Ceva’s RealSpace spatial audio technology, the APO integrates precise sound localization and natural externalization within the Windows APO framework for seamless deployment on Windows PCs. It is optimized for gaming headset use cases, combining rich entertainment audio with competitive gameplay enhancements.
RealSpace Elevate supports 7.1 multichannel rendering with pinpoint accuracy and a realistic soundstage. Gaming-focused enhancements include controls to highlight critical in-game sounds such as footsteps or gunshots.
The licensable APO is available now.
RealSpace Elevate product page
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LiDAR module generates high-resolution depth maps

A 3D direct ToF LiDAR module, the VL53L9CX from STMicroelectronics offers 2.3k-zone resolution for low-compute edge AI systems. This compact all-in-one module integrates a SPAD array, post-processing SoC, two VCSELs, a BCD VCSEL driver, infrared filters, metasurface optical elements (MOEs), and PMIC. It enables high-resolution spatial awareness in robotics, industrial automation, smart buildings, and healthcare.

The VL53L9CX provides 2,268 ranging zones (54×42) across a wide 55°×42° field of view, allowing detailed 3D depth mapping and precise detection of small objects, contours, and edges. With stacked BSI SPAD sensors and MOEs, the module delivers fast, accurate ranging from less than 5 cm to 8.8 m with up to 1% accuracy and frame rates up to 100 fps.
Dual-scan flood illumination reduces motion artifacts and eliminates dead zones while enhancing small-object detection. It also combines 2D infrared and 3D depth imaging, simplifying post-processing and enabling edge AI applications to run on small MCUs.
The VL53L9CX is supplied in a miniature reflowable package. Mass production is scheduled for July 2026.
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Handheld receiver captures wideband RF signals

The R&S PR300 portable monitoring receiver provides 125 MHz of real-time bandwidth and a scanning speed of more than 500 GHz/s. It is designed for field-based spectrum monitoring, interference hunting, high-speed signal detection, and direction finding (DF) with a directional antenna in complex RF environments.

Covering 8 kHz to 8 GHz, the PR300 supports segmented panorama scanning, embedded spectrum analysis, and time-gated direction finding. The frequency range extends to 20 GHz or 33 GHz when used with the HE400DC or HE800-DC30 handheld directional antennas, respectively. With the ADDx07 series compact DF antenna, the system achieves direction-finding accuracy better than 1° from 9 MHz to 20 GHz.
Gapless capture and analysis of wideband communication signals support applications such as radio monitoring in accordance with ITU recommendations, QoS verification, and interference hunting in 5G and LTE networks. The PR300-ZS time-domain measurement option provides simultaneous time-domain data and a corresponding time-gated frequency spectrum, useful for analyzing burst, intermittent, and transient signals.
For more information, visit the PR300 product page.
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Simulator emulates quantum hardware behavior

D-Wave Quantum has announced a gate-model quantum computing simulator for error-aware programming and algorithm development. The cloud-based simulator provides tools for modeling quantum processor behavior, error detection, and real-time control. It supports up to 21 qubits, ideal and hardware emulation modes, and integration with D-Wave’s Ocean SDK.

Built around D-Wave’s dual-rail technology, the simulator gives developers greater visibility into errors so they can design applications and workflows that reflect real processor behavior. It also enables Monte Carlo simulation of real-time quantum system dynamics, development of error-correction routines, and evaluation of advanced error-correction approaches based on dual-rail qubits.
D-Wave plans to offer quantum development bundles that provide access to its forthcoming gate-model quantum simulator and quantum computing systems. Available in Starter and Premium tiers, the bundles include monthly usage allocations and technical guidance from D-Wave. Pricing is available upon request.
The simulator is scheduled to be available through D-Wave’s Leap cloud platform in September 2026. Learn more and request future access here.
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Qualcomm powers next-gen XR with Reality Elite

Qualcomm’s Snapdragon Reality Elite spatial computing processor delivers 48 TOPS of AI performance for video-see-through (VST) headsets and tethered optical-see-through (OST) glasses. The processor can run large vision models (LVMs) and large language models (LLMs) locally, reducing dependence on cloud-based processing for XR applications.

Snapdragon Reality Elite supports photorealistic avatars using Gaussian Splatting, LLM-based agents, and real-time, LVM-driven object generation. These AI capabilities enable more context-aware XR experiences with natural interaction while improving head and hand tracking in see-through devices.
According to Qualcomm, the Snapdragon Reality Elite provides 60% higher GPU performance, up to 30% better CPU performance, and up to 160% greater NPU performance than the Snapdragon XR2+ Gen 2. It also enables up to 20% longer battery life at the same workload and reduces chipset temperature by up to 12°C under load. The increased power efficiency allows the design of lighter, cooler headsets and glasses that can be worn comfortably for extended periods.
Support for visuals up to 4.4K per eye at 90 fps enables sharper detail, smoother motion, and improved color fidelity. VST enhancements enabled by IP hardening, including the EVA block, reduce latency and improve image quality.
For more information, visit the Snapdragon Reality Elite product page.
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How AI is driving a new paradigm in test distribution

Artificial intelligence (AI) is accelerating semiconductor innovation at a pace that is forcing a rethinking of conventional production test strategies. The rapid scaling of graphics processing units (GPUs), AI accelerators, and heterogeneous compute architectures is increasing not only device complexity, but also the amount of test content required to validate performance, reliability, and quality across the manufacturing flow.
As AI infrastructure investments continue to expand, semiconductor manufacturers are building increasingly sophisticated devices that combine massive transistor counts, advanced packaging, high-bandwidth memory (HBM), chiplet architectures, and emerging co-packaged optical (CPO) interfaces. These devices are redefining the relationship between design, validation, and production test.
The result is a new test paradigm in which test content, infrastructure, and analytics are distributed dynamically across multiple insertions—from wafer sort through system-level test (SLT)—to balance cost-of-test, defective-parts-per-million (DPPM), and time-to-market objectives.
AI devices driving a step change in test requirements
The transition from monolithic devices to heterogeneous multi-die systems has substantially increased the burden on automated test equipment (ATE). AI processors now incorporate far more compute engines, memory bandwidth, and power-delivery complexity than previous generations of high-performance devices.
At the same time, traditional transistor scaling no longer delivers the same gains once associated with Moore’s Law. To continue improving system performance, designers are adopting More-than-Moore integration strategies that combine chiplets, 3D packaging, integrated voltage regulation, and advanced interconnect technologies within increasingly dense package architectures. These changes are producing several cascading effects on tests.
First, scan and functional test workloads are growing dramatically as transistor counts increase. Modern AI devices require extremely large volumes of scan vectors that must be delivered at gigabit-per-second speeds through either massively parallel digital channels or high-speed serial interfaces such as PCIe and USB.
Second, power requirements are rising rapidly. Device power supplies must now support kiloamp-class current delivery while maintaining tight regulation and accuracy under highly dynamic loading conditions. Flexible power architectures capable of extensive channel ganging are becoming increasingly important as final-test power envelopes continue to climb.
Thermal management is becoming equally critical. AI devices entering production are expected to push package-level power dissipation into multi-kilowatt ranges, making active thermal control essential throughout the test flow. In advanced environments, thermal systems are increasingly paired with predictive analytics capable of anticipating thermal excursions before they occur, enabling proactive cooling and tighter junction-temperature management.
Advanced packaging complicates multisite test
Migration toward larger 2.5D and 3D packages is also changing the physical realities of production test. As package sizes expand to accommodate more chiplets, HBM stacks and photonic components, device handling and multisite efficiency become more difficult to optimize. Larger sockets consume increasing amounts of device-under-test (DUT) board real estate, constraining routing resources and limiting tester scalability.
In parallel, manufacturers are moving toward larger tray formats carrying fewer devices per tray because of package dimensions and handling constraints. These shifts reduce some of the traditional efficiencies associated with high-parallelism production environments.
The addition of photonic and CPO technologies introduces another layer of complexity. Optical interfaces require integrated electro-optical validation across multiple stages of manufacturing, extending test coverage well beyond conventional electrical characterization. As a result, optical instrumentation is increasingly being introduced at wafer probe, optical-engine test, final package test, and SLT insertions.
Test engineering becoming more software- and data-centric
The growing complexity of AI devices is changing not only hardware requirements, but also the nature of test engineering itself. In other words, engineering organizations are under pressure to accelerate bring-up, reduce debug cycles, and maintain quality targets despite rapidly increasing test content volumes. This is driving tighter integration between design, silicon validation, and manufacturing teams.
As a result, AI-assisted software tools are beginning to play a larger role in test-program generation, debug optimization, and adaptive workflow management. Real-time analytics platforms can now aggregate data across multiple insertions, enabling faster correlation of failures and more intelligent allocation of test coverage throughout the production flow.
In these environments, test content is no longer statically assigned to a single insertion. Instead, coverage increasingly shifts throughout the flow depending on where defects can be detected most efficiently and economically. This distributed approach to test is becoming essential as AI devices scale toward trillion-transistor complexity.
Shifting test left reduces packaging risk
One major trend is the movement of more test content earlier in the manufacturing flow. For advanced AI devices, packaging costs now represent a substantial portion of total product cost because of technologies such as HBM and chip-on-wafer-on-substrate (CoWoS) integration. Packaging defective die into expensive multi-die assemblies can significantly increase material waste and reduce yield.
To mitigate this risk, manufacturers are pushing more coverage to wafer-level and die-level test insertions to improve known-good-die confidence before assembly. Figure 1 illustrates how test distribution increasingly spans the entire workflow, with tighter interaction between design, validation, and production environments.

Figure 1 Test distribution has expanded to accommodate growing need for test across the manufacturing ecosystem—beginning with silicon validation and extending through system-level test. Source: Advantest
This shift-left strategy (Figure 2) includes broader scan coverage and expanded fault modeling at speed testing, and increasingly system-aware functional validation at the die level. Some workflows also incorporate calibration, trimming, and memory repair operations prior to package assembly.

Figure 2 Shifting test content left enables more coverage at wafer and die test stages to improve known-good-die screening before package assembly. Source: Advantest
In more advanced implementations, active thermal control capabilities are also migrating closer to singulated-die test stages. The objective is straightforward: identify marginal or defective components before they enter expensive advanced-packaging flows.
System-level test expanding
At the same time, other forms of coverage are shifting later in the process. As devices become more heterogeneous and application-specific, certain failure mechanisms emerge only under realistic operating conditions involving software execution, thermal loading, timing interactions, or high-bandwidth traffic patterns.
These conditions are often difficult—or impossible—to replicate during traditional structural or functional test insertions. Consequently, SLT is becoming increasingly important for AI and HPC devices. System-level environments can expose defects associated with workload execution, protocol interactions, and real-world operating states that are not observable during earlier production stages.
New approaches, including scan-over-PCIe methodologies and highly parallel SLT architectures, are helping manufacturers improve coverage while attempting to control the significant test times associated with these environments. Figure 3 illustrates the corresponding shift-right strategy.

Figure 3 Shifting test content right enables additional test coverage to be executed after packaging to further reduce DPPM before shipment. Source: Advantest
Real-time analytics enabling adaptive test distribution
The increasing fragmentation of test insertions is creating demand for tighter orchestration across the production floor. Modern test infrastructures are evolving toward highly connected environments in which data streams continuously between validation, wafer sort, final test, and SLT operations. Real-time analytics platforms can then use this data to optimize insertion decisions, adapt test limits, and improve yield-learning cycles.
GPU-accelerated edge inferencing and AI-based decision engines are also enabling faster adaptive responses during production. In some cases, computation can be offloaded from the tester itself to remote compute infrastructure, allowing more sophisticated analytics without compromising throughput.
This level of coordination requires consistent software frameworks and portable test content capable of moving seamlessly between insertions and platforms. So, shared execution environments and unified debug tools are becoming increasingly important as manufacturers attempt to reduce engineering overhead while accelerating deployment.
Optical test adds new workflow stages
CPO and photonic integration introduce additional challenges because optical functionality must be validated alongside traditional electronic behavior. Unlike conventional semiconductor devices, photonic systems often require multiple dedicated insertion points throughout manufacturing. These may include photonic wafer test, dual-sided probing of electronic and photonic die, optical-engine characterization, and additional packaged-module validation after integration with ASICs.
As with electrical tests, much of this optical validation is shifting earlier in the flow to ensure known-good optical engines prior to final assembly. However, full electro-optical verification often still requires additional socketed final-test and SLT insertions after system integration.
Figure 4 highlights how optical test introduces additional insertion points spanning photonic wafer test, optical-engine validation, final package test, and SLT.

Figure 4 For testing CPO devices, test content shifts left for three insertions and right for final socketed device test. Source: Advantest
Test distribution is becoming a strategic optimization problem
AI is transforming semiconductor tests from a relatively linear production step into a highly distributed optimization challenge involving power, thermal management, data analytics, packaging economics, and workflow orchestration. Meeting future quality and throughput requirements will require closer collaboration across the semiconductor ecosystem, including design teams, ATE suppliers, packaging providers, and system integrators.
As AI devices continue scaling in complexity, test infrastructure must evolve from traditional defect screening toward intelligent, adaptive validation environments capable of making real-time decisions across the manufacturing flow. In that sense, the future of semiconductor test may depend as much on data movement and workflow intelligence as on the tester hardware itself.
Fabio Pizza is business segment manager at Advantest Europe.
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Capacitive position sensor with linearized output

An only slightly less simple followup circuit also ratios sensor capacitance to a reference capacitor to measure micrometers…this time linearly.
A few weeks ago, Design Ideas published a simple circuit of mine that provides an analog interface to capacitive position sensors. Figure 1 shows that basic design with its separate complementary outputs: Out and –Out.
Wow the engineering world with your unique design: Design Ideas Submission Guide

Figure 1 The U1a and U1b cross-coupled Schmidt trigger timers form a ~1MHz RC multivibrator. The Tsense pulse width is inversely proportional to sensor displacement (Tref/Tsen= Cref/Csen = d).
Figure 2 shows the “Simple Simon” method it offered for acquisition of the sensor position signal: passive RC averaging of the Tsense pulse train.

Figure 2 Passive RC averaging of the Tsense output yields the analog position output.
The resulting analog output, as shown in figure 3, provides good range and resolution but is nonlinear.

Figure 3 This graph shows the sensor performance when Out is connected to a 12bit ADC using +5V for its reference. The black curve (left axis) equals the plate separation (d) in millimeters. The red curve (right axis) equals the ADC lsb resolution in micrometers.
So, I got to thinking about linearization and the advantages it would provide, and wondering how tough it would be. It turned out to be not that difficult.
Figure 4 shows the resulting interface with added linearization circuitry. Just an added opamp, three resistors, and two non-critical caps did the trick. Here’s how it works.

Figure 4 Averaging integrator A1 linearizes the displacement sensing response. R5 is shown as a precision type, albeit just out of force of habit. It, like the ON resistances of U2’s switches, actually cancels out.
Each capacitance measurement cycle, the 500ns Tref pulse causes 4066 switch U2d to deposit a quantum of charge on integrator A1’s summing node of Qref = Tref/R5. Meanwhile the sensor-capacitance proportional Tsen pulse subtracts Qsen = Tsen(Vout – 1)/R5. The charge balance is forced by A1 to maintain Qsen = Qref, therefore Tsen(Vout – 1)/R5 = Tref/R5, and Vout – 1 = Tref/Tsen = Cref/Csen = d. Note that R5 magically (?) disappears from the math.
Figure 5 shows the straight-as-an-arrow-in-zero-gravity result.

Figure 5 In this graph of the enhanced circuit results, the black curve equates to the sensor readout d in mm, with red at a constant 1 mV per micron resolution.
Stephen Woodward‘s relationship with EDN’s DI column goes back quite a long way. Over 200 submissions have been accepted since his first contribution back in 1974. They have included best Design Idea of the year in 1974 and 2001.
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