Microelectronics world news

Vishay Intertechnology, Inc. announced that it has successfully delivered on the ambitious expansion of its inductor and frequency control device (FCD) product lines announced in September 2024, significantly increasing the breadth and availability of components now in the field. The company has released more than 2000 new SKUs across nearly 100 series across inductors and frequency control devices, with continued rollouts underway in 2025.

The expanded offering simplifies sourcing for Vishay customers and supports more applications through broader inductance and voltage ranges, improved noise suppression, and additional size variations to fit even the smallest PCB footprints. Recent launches include new wireless charging inductors, common-mode chokes, high current ferrite impedance beads, and TLVR inductors, as well as nearly 15 new FCD products.

“This expansion was designed to deliver on our commitment to give customers maximum design flexibility, and the market response has confirmed that we’ve hit the mark,” said Mike Husman, Senior Vice President, Inductor Division, at Vishay. “We’re now seeing the impact of this expansion in the field — thousands of new SKUs, strong uptake through distribution, and a clear signal from our customers that they value the depth and readiness of our offering.”

To support this growth, Vishay continues to invest in global production capacity, including expansions in Asia, Mexico and the Dominican Republic. In response to the industry’s increasing demand for diversified manufacturing locations — and part of Vishay’s strategy of vertically integrated, resilient manufacturing — flagship Vishay-produced IHLP power inductors are now shipping from the company’s La Laguna plant in Gómez Palacio, Durango.

The momentum continues in 2025, with more product series set to launch in the coming months. In total, the company expects to exceed 3000 new SKUs across inductors and frequency control devices from its overall expansion effort, supporting increased design-in activity across industrial, telecom, and consumer applications.

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Keysight Technologies will demonstrate 20 advanced AI-enabled 6G and wireless solutions designed to accelerate 6G and wireless innovation at India Mobile Congress 2025. The solutions on display include network digital twins, AI-driven channel modeling, and high-fidelity emulation, which enable rapid validation of beamforming, interference mitigation, and ultra-low latency, advancing next-generation 6G and wireless communication systems. In addition, Prasad Petkar, Keysight India Wireless SEO Manager, will present a paper entitled, “Engineering the 6G Future: Accelerating Wireless Innovation from Lab to Live Networks.”

Keysight Technologies will showcase its cutting-edge AI-enabled 6G and wireless solutions from October 8–11, 2025, at Booth No. C10 in Yashobhoomi, New Delhi.

Keysight will feature the following demonstrations:

• mMIMO Design from FR1 to FR3 / New 6G Frequency – Sub THz and FR3: Keysight will show how it’s enabling the leap to 6G with advanced mMIMO design across FR1 to FR3, including new sub-THz bands. These next-generation test solutions unlock faster speeds, wider bandwidths, and reliable performance, helping accelerate future wireless technologies from concept to real-world deployment.
• 5G Interference Mitigation: The demo includes advanced spectrum monitoring, signal analysis, and emulation workflows to detect and isolate interfering signals across licensed and unlicensed bands. Leveraging real-time visibility and AI-driven analytics, the solution accelerates root-cause identification, optimizes spectrum usage, and validates network robustness under diverse interference scenarios critical for 5G evolution.
• NTN Design Optimization: This demo showcases advanced modeling and test workflows for satellite-to-terrestrial integration, addressing propagation delays, Doppler effects, and dynamic channel conditions. By combining link-level validation, system simulation, and real-world emulation, the solution enables engineers to optimize performance, spectrum efficiency, and interoperability for emerging 5G-advanced and 6G NTN deployments.
• RF Environment Emulation: The demo recreates real-world wireless conditions in the lab and highlights how innovators can test devices, networks, and use cases under complex RF scenarios including mobility, interference, and multi-path. This ensures reliable performance, faster validation, and reduced field testing costs for 5G and 6G.
• Device Security Defense: The demo integrates protocol fuzzing, penetration testing, and threat emulation to expose vulnerabilities across wireless, application, and cloud layers. Using automation and real-world attack libraries, the solution validates device resilience against cyberattacks, enabling engineers to harden designs, ensure standards compliance, and accelerate secure product deployment.
• Digital Twins Emulation: This demo enables accurate, scalable modeling of devices and networks under real-world conditions. By combining system simulation, AI-driven analytics, and RF environment emulation, the solution provides end-to-end validation of designs and architectures, helping engineers optimize performance and reliability across 5G-advanced and 6G.

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I wanted to share a common issue with the LM358 that might help others troubleshooting similar problems. The Problem (Left Circuit) Built a simple non-inverting amplifier (gain ≈ 4.9) using an LM358 with ±9V rails. The output showed significant crossover distortion around zero-crossing - you can see the characteristic "flattening" in the waveform. Root Cause The LM358 uses an NPN output stage that pulls high well but relies on an internal current source to pull low. When driving high-impedance loads (like a scope probe directly), there's insufficient sink current to rapidly transition through zero, creating a dead zone. A Solution (Right Circuit) Adding a 1kΩ pull-down resistor (RL) from output to the negative rail (-9V) completely fixed it: Provides a continuous current path to the negative supply Enables smooth zero-crossing transitions Result: much cleaner waveform with minimal distortion Key Takeaways LM358/LM324 require careful output loading considerations in bipolar configurations Pull-down resistor to negative rail (typically 1kΩ-10kΩ) enables proper operation This is in the datasheets but easily overlooked in practice For true rail-to-rail with minimal distortion, consider CMOS op-amps (TLV274, MCP6004, etc.) Hope this helps someone debugging similar issues! The LM358 is a low cost and accessible op-amp great for general or educational/hobby use, but understanding its output stage limitations is key for clean signals. This came up while documenting some lab exercises, and I thought it was worth sharing since it's such a common gotcha. submitted by /u/eimtechnology [link] [comments]

The new entrant to the RA8 series adds real-time, high-precision motor control, strong security, and fast communications.

submitted by /u/Electro-nut [link] [comments]

The ANN-MB3 delivers centimeter-level positioning in a rugged and compact form factor, simplifying precision GNSS deployment across industries.

Up front: some background. The air-temperature sensor attached to my (home-brew) rain gauge became flaky. Short-term solution: fix it (done). Longer-term goal: improve it (read on).

That sensor is a standard Vishay NTC (negative temperature coefficient) thermistor: 10k at 25°C and with a beta value of 3977. In conjunction with a load resistor, it feeds a PIC microcontroller (MCU), which samples the resulting voltage (8 bits) for radio-linking back to base for processing and display. Figure 1 shows the utterly conventional circuit together with its response to temperature.

Figure 1 A basic thermistor circuit, together with its calculated response.

The load resistor’s value of 15699 Ω may seem strange, but that is the thermistor’s resistance at 15°C, the mid-point of the desired -9 to +40°C measuring range. Around every 30 seconds, the PIC strobes it for just long enough for the reading to settle.

Wow the engineering world with your unique design: Design Ideas Submission Guide

The plot shows the calculated response together with a straight line running through the two actual calibration points of 0°C (melting, crushed ice) and 30°C (comparison with a known-good thermometer). That response was calculated using the extended Steinhart–Hart equations rather than the less accurate exponential approximation. Steinhart and Hart (S-H) are to NTC thermistors as Callender and Van Dusen are to platinum resistance temperature detectors (PRTDs), modifying the exponential curve just as Callender-Van Dusen (CVD) tweaks an otherwise straight line.

The relevant Wikipedia article is, of course, informative. Still, a brief and useful guide to the S–H equations, complete with all the necessary constants, can be found on page 4 of Vishay’s relevant datasheet. Curiously, their tables of resistance versus temperature show truncated rather than rounded values, so they quote our device’s R15 as 15698 ohms rather than 15699. The S–H figure is 15698.76639545805…, give or take a few pico-ohms.

You’ll notice that Figure 1’s plot is upside down! That is deliberate, so a higher temperature shows a higher output, though the voltage actually falls. I think that’s more intuitive; you may disagree.

Matching an RTD to an NTC

That straight line, derived from the S–H values at 0 and 30°C, is the key to this idea. Making the PRTD generate a signal that matches it will avoid any major changes to the processing code, especially the calibration points, and it will also provide a much wider range with greater accuracy than an NTC. Because the voltage from the thermistor circuit is ratiometric, the PRTD must output a level that is a proportion of the supply.

To do that, we amplify the voltage developed across the PRTD, compensate for the CVD departure from linearity, and add an offset. The simplest circuit that can do all these is shown in Figure 2a.

Figure 2 Probably the simplest circuit (2a) that can give an output from a PRTD to match a thermistor’s response, with a slightly better variant (2b). These are both flawed, and the component values are not optimized. They are to show the principle, not the practice.

That simplicity leads to complications, because pretty much every component in Figure 2a interacts with every other one. It’s bad enough to design, even with ideal (simulated) parts, but final calibration could require hours of iterative frustration. Buffering the offset voltage, as shown in Figure 2b, helps, but that extra op-amp can be put to better use.

A practical circuit

If we split the circuit into two, life becomes easier. Figure 3 shows how.

Figure 3 The final, workable circuit. Amplification and offsetting are now separate, making calibration much easier.

The processor turns Q1 on to deliver power. (The previously active-high GPIO pin powering the thermistor must now be active-low to drive Q1’s gate, and that was the only code change needed.) The FDC604 has a low RDS(ON) of a few tens of milliohms, so it drops only 100 µV or so, which is insignificant, even if the measuring ADC’s reference is the Vdd rail. (Offsets within the MCU itself will probably be greater.) Because the circuit is only active for a millisecond every half minute or so, self-heating of the RTD can be ignored. Consumption was about 3 mA at 5 V or 2 mA at 3.3 V.

R1 feeds current through the RTD, producing a voltage that is amplified by A1a, whose gain can be trimmed by R5. R6 feeds back into the RTD and R1 to compensate for both CVD and the varying drive to the RTD as its resistance changes. Its value is fairly critical: 33k works well enough for our purposes, but 31k95—33k||1M0—is almost perfect, with a predicted error of way under 1 millidegree over a 100°C span—theoretically—so we’ll use that. Obviously, this is ridiculous overkill with 8-bit output sampling, but if a single extra resistor can eliminate one source of errors, it’s worth going for.

A1b now amplifies the signal further (and inverts it) and applies a trimmable offset. Its output as a fraction of the supply voltage is now directly proportional to the PRTD’s temperature. Note that the gain of this stage is preset: R7 and R8 should be selected so that their ratio is as close as possible to 3.9, though their absolute values are not critical. The result is shown in Figure 4.

Figure 4 Plotting the output against the RTD’s resistance now gives a result that is almost indistinguishable from the straight-line target, the (idealized) error corresponding to much less than 1 millidegree. This shows the performance limit for this circuit; don’t expect to match it in real life.

Modeling and plotting

A simple program (Python plus Pygame) to plot the circuit’s operation at different scales made it easy to see the effects of changing both R6 and A1a’s gain, with the error curve tilting (gain error) and bending (compensation error). That curve needs to be as straight and flat as possible.

Modeling the first section needed iteration, starting with a (notional) unit voltage feeding R1 and ~0.7 driving R6. Calculating the voltage across the PRTD and amplifying that gave the stage’s output, ready to feed back into R6 for recalculating V_RTD. (Repeating until successive results matched to eight significant figures took no more than ten iterations.) The section representing A1b was trivial: take A1a’s output and multiply by 3.9 while subtracting the offset.

As a cross-check, I put the derived values into LTspice and got almost the same results. The slight differences are probably because even simulated op-amp gain stages have finite performance, unlike multiplication signs.

The program also generated Table 1, which may prove useful. It shows the resistance of the PRTD at various temperatures (centered on 15°C) together with the output voltage referred to Vdd and given as a proportion of it. That output is also shown, scaled from 0–255 in both decimal and hex.

The long numbers the program generated have been rounded to more reasonable lengths, which, deliberately, are still more accurate than most test kits can resolve. Too many digits may be useful; too few never are.

Table 1 The PRTD’s resistance and Figure 3’s output calculated against temperature, centered on 15°C. The output is shown as decimals, both raw and rounded, and hex.

Compensating for long leads

As it stands, the circuit does not lend itself to true 3- or 4-wire compensation for the length of the leads to the RTD—unnecessary with an NTC’s multi-kΩ resistance. However, using a 4-wire Kelvin connection, where the power-feed and sensing lines are separate, should work well and reduce the cable’s effect, as shown in Figure 5. With less than a meter separating the RTD from the circuitry, I used speaker cable. (Copper’s TCR is close to that of a PRTD.)

Figure 5 Long leads to a PRTD can cause offset errors. Using a 4-wire Kelvin arrangement minimizes these. If the µC’s A–D has external reference-voltage pins, they can be driven from the circuit for (notionally) improved accuracy.

Figure 5 also shows how accuracy could be improved by driving the ADC’s reference pins from the circuit’s power rails, though this is academic for coarse sampling. It would also compensate for any voltage drop across Q1, should that be important. Q1 could then even be omitted, the circuit being powered directly from an active-high pin. That would drop the rail voltage, which wouldn’t matter if it were fed back to REF+.

This circuit is optimized for a center temperature of 25°C, as that is the point at which most thermistors are specified, with the load resistor equaling the R(25) value. Unlike the 15°-centered version in Figure 3, I’ve not built or tried it, but believe it to be clean. Its plot—error curve included—looked very close to that in Figure 4, but shifted by 10°C.

Errors, both theoretical and practical

The input offset voltage of op-amps changes with temperature and is a potential source of errors. The quoted figure for the MCP6002 is ±2 µV/°C (typ.), which is good but not insignificant. Heating the circuit by ~40°C (with a 100R resistor replacing the PRTD) gave an output shift corresponding to less than 0.05°, which is acceptable, and in line with calculations. (An old hairdryer is part of my workbench kit.) Here, the circuitry and the PRTD will both be outside, and thus at about the same temperature.

So how does it perform in reality? It’s now built and calibrated exactly as in Figure 3, but not yet installed, allowing testing with a PRTD simulator kludged up from resistors, both fixed and variable, plus switches so the resistance can be connected to either the circuit or a (well-calibrated) meter for precise adjustment. Checking at simulated temperatures from -10 to +50°C showed errors ranging from zero at -10° to -0.22° at +50° with either 3.3 V or 5 V supplies. This could be improved with extra fiddling (I suspect a slight mismatch in R7/8’s ratio; available parts had unhelpful spreads), but the errors are less than the MCU’s 8-bit resolution (~0.351 degrees/count, or ~2.85 counts/degree), so it’ll do the job it’s intended for, and do it well.

While this approach doesn’t substitute for a “proper” PRTD circuit, it does make a nice drop-in replacement for a thermistor, giving a wider measurement range with much better linearity while needing no extra processing. I hope the true experts in the field won’t find too many problems with it. BTW, “expert” derives etymologically from “stuff you’ve learned the hard way: been there, done that, worn the hair shirt”. Never trust an armchair expert unless you’re shopping for comfortable seating.

—Nick Cornford built his first crystal set at 10, and since then has designed professional audio equipment, many datacomm products, and technical security kit. He has at last retired. Mostly. Sort of.

 Related Content

• DIY RTD for a DMM
• Improved PRTD circuit is product of EDN DI teamwork
• Fake contacts, bounced to order
• Calculation of temperature from PRTD resistance

The post Dropping a PRTD into a thermistor slot—impossible? appeared first on EDN.

NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and developed and previously manufactured high-power industrial blue lasers — says that its subsidiary Nuburu Defense LLC has secured a binding agreement to directly acquire Orbit S.r.l., an Italian software company specializing in operational resilience, business continuity, and crisis management for mission-critical organizations...

Its a Wayne Kerr 6425 LCR meter. submitted by /u/Wormjuice- [link] [comments]

After 3 weeks and studying two poorly written datasheets, I finally uploaded the initial release of my pure MicroPython driver for these graphical Futuba NAGP1250 vacuum fluorescent displays! I'm so nervous about releasing my own code lol, please be gentle I love this retro tech so much and wanted to be able to let other people share in my joy and wanted to make it as easy as possible for someone to get started! Girl power 💪 https://github.com/AlmightyOatmeal/MicroPython_Futaba_NAGP1250 girlswhocode #esp32 #womenintech #electronics #micropython submitted by /u/DangerousDyke [link] [comments]

As part of a big push towards the development of India’s semiconductor industry, Electronics and IT Minister Ashwini Vaishnaw has sanctioned the setup of the ‘NaMo Semiconductor Laboratory’ at IIT Bhubaneswar. The ₹4.95 crore estimated facility will enhance India’s strength in chip design, fabrication, and research.

The new laboratory, as per an announcement by the Ministry of Electronics and Information Technology (MeitY), will be a state-of-the-art facility with the machinery and software required for training in semiconductors, design, and fabrication. The center is hoped to be instrumental in developing a rich talent pool of engineers and researchers equipped with industry-standard skills for India’s emerging semiconductor industry.

The ministry underscored that the initiative is consistent with the government’s overall vision of transforming India into a global center for semiconductor manufacturing and innovation. The lab will also aid in the creation of qualified professionals for future chip manufacturing and packaging facilities in the country.

The officials said that the setup of the NaMo Semiconductor Laboratory would act as a catalyst for India’s rapidly growing semiconductor ecosystem, reiterating flagship programs like ‘Make in India’ and ‘Design in India’.

As the global semiconductor industry is experiencing explosive growth, the step is likely to enhance India’s role in the international value chain and spur the country’s march toward technological independence.

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Welcome to the second All About Circuits Summit Day of 2025! This guide will introduce the features of this Wednesday's schedule and help you plan your month-long participation.

“AI is redefining the role of designers by automating design engineering, improving verification accuracy, and shortening development cycles,” says Satoshi Shibatani, vice president of EDA Technology and Design Services Division at Renesas, in an exclusive conversation with ELE Times. As various professions worldwide undergo a profound shift in their thought processes and operations, largely driven by the emergence of AI, ELE Times takes the hot seat with Satoshi Shibatani of Renesas, the second most prominent company in the automotive microcontroller market in 2024, to discuss the dynamics of the changing role specifically in the landscape of product design and development. 

He remarks, “The role of an engineer is evolving from ‘manual designer’ to ‘AI-collaborative design strategist,’ underlining the impact AI has made on the role of an engineer in the landscape of product development. Through this, he also reflects on the expectations that the companies have of the prospective engineers, which is to become more and more AI-friendly and intelligence-collaborative.

How’s the transformation playing out? 

“At Renesas, we have been advancing design efficiency using AI through the company-wide ‘Design by AI Project’ since 2021, and it has already shown results across many development processes,” says Satoshi, reflecting on the prevalent use of AI at Renesas specifically for product design and development. This captures the early adoption approach that Renesas pursued with the AI technology to enable growth and transformation in the product development cycle. 

Which part is most AI-based now? 

Since design is one of the most important and complex stages of product development, it is vital to know which part has been most affected by AI. Among the various processes involved in the design cycle of a product, verification is one aspect that has been widely affected owing to the emergence of AI. “In verification, generative AI is used for RTL (Register Transfer Level) reviews and spec analysis, which is expected to enable early bug detection and a significant reduction in verification processes,” says Satoshi. 

With this illustration, he simply shows how AI has influenced decision-making at the level of product design through venturing into such intricate processes as bug detection.

How exactly is Renesas using AI? 

At Renesas, AI is being integrated into design through what the company describes as a “collaborative design style.” Rather than relying on AI solely for automation, designers interact with its outputs, assess the results, and propose improvements. “In this model, AI serves not merely as an automation tool but as a collaborative partner that enhances human thinking. Innovation is driven by human creativity, and rapid trial-and-error cycles help us reach our potential and foster continuous breakthroughs,” Satoshi remarks.

How’s the role of engineers changing then? 

As AI takes a more central role in design, the role of engineers at Renesas is also transforming. Shibatani explains that the shift is from being a “manual designer” to becoming an “AI-collaborative design strategist.” This means engineers are now expected to go beyond traditional design skills and embrace new capabilities such as data literacy, prompt engineering, AI model interpretation, and the use of collaborative AI tools. 

“We provide training programs covering AI tool usage, interactive design support with generative AI, model building, and output evaluation and improvement,” he adds, noting that Renesas is actively shaping an environment to support this talent development and ensure engineers are equipped for the future.

What’s the real efficiency metric? 

While aims and efforts do count, metrics make the final case for business. “For design optimization, AI has improved design efficiency by up to 30% in some cases,” says Satoshi as he underlines the real metric conveying the impact of AI usage in the product design and development cycle at Renesas. He states that the company has been consistently enhancing design efficiency since 2021. As a result, apart from the improved productivity through automation, AI usage has contributed to better PPA (Performance, Power, Area) metrics at Renesas. 

Why is it not all good yet?

In the conversation, he further touches upon the various challenges that accompany AI prevalence in the development cycle. It includes “data quality, vendor collaboration, security, and tool integration,” says Satoshi, underlining the fact that no system is devoid of challenges for the engineers. He further states that to address the very issue of data quality, Renesas has built a system that quantitatively measures AI data quality by combining existing EDA tools and technologies. 

As with any system, the AI-powered processes are going through a transition phase wherein various modes and operations are yet to be witnessed. At this stage, AI is significantly improving analysis speed and accuracy by parsing large design datasets and specifications to auto-generate verification plans and test benches. However, it continues to operate under human supervision and is not fully autonomous. Sensitive customer data remains excluded from training and is discarded after use, while strict traceability measures are in place to ensure reliability and prevent hallucinations.

The post The role is evolving from “manual designer” to “AI-collaborative design strategist,” says Satoshi Shibatani of Renesas. appeared first on ELE Times.

India is on the verge of an electric revolution. With the government aiming at 30% EV penetration by 2030 and vehicle electrification being a key element of the country’s decarbonization roadmap, power electronics has emerged to be among the very crucial and lucrative sectors in this transformation.

Power electronics, including inverters, onboard chargers, DC-DC converters, and battery management systems (BMS), are all essential to harness energy efficiently and maximize performance from EVs. Two-wheelers to electric buses, the whole spectrum of EVs depends on these systems to efficiently execute the conversion, controlling, and distribution of electrical energy.

As the global automotive industry accelerates toward electrification, power electronics have emerged as the driving force behind innovation in electric vehicle. These intelligent systems regulate energy flow, drive efficiency, fast charging, and ensure consistent performance across vehicle segments.

In 2024, the global market for power electronics in electric vehicles surged to USD 28.5 billion, and it’s poised for a meteoric rise projected to exceed USD 70 billion by 2030, driven by a robust CAGR of over 17%. In India, the automotive power electronics market was valued at USD 11.98 billion in 2024 and is projected to grow to USD 22.7 billion by 2034, with a CAGR of 6.6%.

As the Indian EV market grows further, power electronics is seeing extreme localization, investment flows, and technological upgrades-in a clear push towards high-value manufacturing and strategic partnerships.

India’s Five-Year Data Snapshot of the EV Power Electronics Market (2019-2024):

Between 2019 and 2024, India’s EV power electronics market evolved significantly. In 2019, the market size was ₹1,050 crore, driven by early adoption in fleet EVs and pilot policy programs. In 2020, it grew to ₹1,350 crore, supported by the FAME-II extension and state-level EV policies. By 2021, the market reached ₹1,870 crore, fueled by a surge in electric two-wheeler sales and increased component imports. In 2022, local development of BMS and inverters gained momentum, pushing the market to ₹2,720 crore. In 2023, investments in silicon carbide (SiC) production and EMS facilities elevated the market to ₹3,590 crore. The estimated value for 2024 is ₹4,450 crore, driven by the Make in India initiative and rising demand from electric light commercial vehicles (e-LCVs) and electric buses.

Current Market Conditions and Trends:

1. Increasing Demand in the 2W and 3W

Electric two-wheelers and three-wheelers, but most of all in last-mile logistics, food delivery, and shared riding, make up over 80% of the EV sales in India. These require:

• Compact motor controllers, low-voltage
• DC-DC converters integrated
• BMS that is basic but efficient

Startups such as Ola Electric, Ather Energy, Yulu, and Euler Motors are engaged in localizing power electronics with design, testing and fabrication facilities within India.

2. Localization Drive by the Government

The Indian government’s localization drive has prioritized power electronics under the Production Linked Incentive (PLI) schemes for Advanced Chemistry Cell (ACC) battery storage and auto components, designating them as verticals of strategic importance. These incentives aim to bolster domestic manufacturing of inverters and EV chargers, foster the development of EMS (Electronics Manufacturing Services) clusters, and establish robust testing and standardization infrastructure through institutions like ARAI and ICAT. States such as Tamil Nadu, Karnataka, Uttar Pradesh, and Telangana are rapidly emerging as key hubs for EV component production, reinforcing India’s ambition to become a global manufacturing powerhouse in electric mobility.

3. SiC/GaN Technology

SiC and GaN technologies in India are still in their early stages, with manufacturers largely dependent on imports, through companies like Tata Elxsi, Servotech and Exicom are advancing local SiC packaging and vertical integration while some institutions are actively engaged in R&D for high-voltage inverter systems.

Segmentation:

• For two- and three-wheeler EVs, the market demands low-cost inverters, compact BMS, and DC-DC converters. This segment includes over 25 OEMs and a growing retrofitting market.
• Passenger EVs require 400V inverters, onboard chargers, and smart BMS, with companies like Tata and Mahindra driving demand.
• Commercial EVs, such as electric buses and e-LCVs, need rugged, high-voltage inverters and chargers.
• EV chargers require AC-DC converters and controller boards, with over 6,000 charging stations planned by FY 2026.
• Fleet and utility EVs—used by logistics firms, warehouses, and airport fleets—benefit from remote diagnostics and telematics-integrated BMS.

Key Indian Players:

• Tata Elxsi is working on inverters, BMS, and simulation software, with active development in SiC technology.
• Servotech Power focuses on EV chargers, onboard chargers, and DC-DC converters, and plans to manufacture SiC modules in India.
• Exicom specializes in battery packs, BMS, and electronics for light commercial vehicles, and is scaling up production for commercial EVs.
• Ola Electric is developing integrated powertrain systems, with in-house controller and BMS design underway.
• Delta India supplies power conversion systems to Tata Motors and public charging infrastructure.

Growth Drivers and Future Outlook:

Government initiatives and the flourishing private sector work together to provide electronics in India aesthetic power. Supporting localism, the drivers include PLI implementation schemes, import duties granted on the concept of localization, and, on the other hand, electrification of public transport under the PM e-Bus Sewa Yojana. Compliance by fleet operators has been instrumental in accelerating demand; some of them are leading corporate examples, such as Tata, Amazon, and Flipkart. Progressive state EV policies have been sowing the fertile grounds of land, subsidies, and demand-side incentives for manufacturing and innovation.

Opportunities (2025–2030):

The next five years open immense commercial opportunities. India shall become a regional export hub for EV inverters, especially to Southeast Asian and MENA markets. The indigenous development of GaN-based OBCs and DC-DC converters grows ever more attractive, backed by scalable EMS units crafted for startups and MSMEs. Also, modular powertrain kits for retrofitting ICE vehicles offer a good retrofit market in the Tier-2 and Tier-3 cities.

Challenges:

Despite building momentum, some barriers remain in place. As of now, India does not have any domestic entities manufacturing SiC wafers and the high import duties on the GaN components and control ICs continue to eat into margins. There is also an acute shortage of skills in automotive-grade electronics design, and the industry grapples with issues relating to standards and thermal management-a big concern for operating under tropical climates that India presents.

Commercial forecast: By 2030 & onward:

The Mutually Enforced Power Electronics Market in India is slated to exponentially shoot past ₹20,000 crore by around 2030, with over 10 million EVs present on roads of India. Demand would come through the mid-range inverter platforms for domestic as well as for export purposes, with the scaling up of Tier-2 and Tier-3 supplier networks alongside deeper MSME integrations into the EV value chain.

Conclusion:

Power electronics are taking center stage in India’s fast charging electric vehicle landscape, which will support everything from 750V electric buses on major expressways to low-cost e scooters in Tier-2 cities. As vehicle electrification scales up, power electronics will determine not only the operational efficiency and reliability of EVs but also the worldwide competitiveness of India’s EV manufacturing ecosystem.

With supportive government policies in place, a large domestic demand base, growing R&D capabilities, along with increased attention from domestic and global investors, India stands on the cusp of becoming a global hub for EV power electronics manufacturing and innovation.

For OEMs, component makers, and tech entrepreneurs, the window of opportunity is now. Investment in localized, scalable, and intelligent power electronics solutions will reduce import dependency and costs while paving the way to assure dominance in one of the fastest-growing clean tech markets globally.

The future of India’s EV growth, and development, is not just about batteries and motors. It’s about the invisible engine that makes it all possible i.e power electronics.

The post Electric Mobility Drives India’s Power Electronics Expansion appeared first on ELE Times.

Nanoelectronics research center imec of Leuven, Belgium has welcomed AIXTRON, GlobalFoundries, KLA Corp, Synopsys and Veeco as first partners in its 300mm gallium nitride (GaN) open innovation program track for low- and high-voltage power electronics applications...

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has announced the launch and first commercial multi-tool order for its new Lumina+ metal-organic chemical vapor deposition (MOCVD) system. Launch services and space systems firm Rocket Lab Corp of Long Beach, CA, USA (the parent company of space power provider SolAero Technologies Corp) has purchased the tools as part of its ongoing project under the Department of Commerce’s CHIPS and Science Act to expand domestic production of compound semiconductor products at its facility in Albuquerque, New Mexico...

Since the early 2000s, ultra-wideband (UWB) technology has gradually found its way into a variety of commercial applications that require secure and fine-ranging capabilities. Well-known examples are handsfree entry solutions for cars and buildings, locating assets in warehouses, hospitals, and factories, and navigation support in large spaces like airports and shopping malls.

A characteristic of UWB wireless signal transmission is the emission of very short pulses in the time domain. In impulse-radio (IR) UWB technology, this is taken to the extreme by transmitting pulses of nanoseconds or even picoseconds. Consequently, in the frequency domain, it occupies a bandwidth that is much wider than wireless ‘narrowband’ communication techniques like Wi-Fi and Bluetooth.

UWB technology operates over a broad frequency range (ranging typically from 6 to 10 GHz) and uses channel bandwidths of around 500 MHz and higher. And because of that, its ranging accuracy is much higher than that of narrowband technologies.

Today, UWB can provide cm- to mm-level location information between a transmitter (TX) and receiver (RX) that are typically 10-15 meters apart. In addition, enhancements to the UWB physical layer—as part of the adoption of the IEEE 802.15.4z amendment to the IEEE standard for low-rate wireless networks—have been instrumental in enabling secure ranging capabilities.

Figure 1 Here is a representation of UWB and narrowband signal transmission, in the (top) frequency and (bottom) time domain. Source: imec

Over the years, imec has contributed significantly to advancing UWB technology and overcoming the challenges that have hindered its widespread adoption. That includes reducing its power consumption, enhancing its bit rate, increasing its ranging precision, making the receiver chip more resilient against interference from other wireless technologies operating in the same frequency band, and enabling cost-effective CMOS silicon chip implementations.

Imec researchers developed multiple generations of UWB radio chips, compliant with the IEEE 802.15.4z standard for ranging and communication. Imec’s transmitter circuits operate through innovative pulse shape and modulation techniques, enabled by advanced polar transmitter, digital phase-locked loop (PLL), and ring oscillator-based architectures—offering mm-scale ranging precision at low power consumption.

At the receiver side, circuit design innovations have contributed to an outstanding interference resilience while minimizing power consumption. The various generations of UWB prototype transmitter and transceiver chips have all been fabricated with cost-effective CMOS-compatible processing techniques and are marked by small silicon areas.

The potential of UWB for radar sensing

Encouraged by the outstanding performance of UWB technology, experts have been claiming for some time that UWB’s potential is much larger than ‘accurate and secure ranging.’ They were seeing opportunities in radar-like applications which, as opposed to ranging, employ a single device that emits UWB pulses and analyzes the reflected signals to detect ‘passive’ objects.

When combined with UWB’s precise ranging capabilities, this could broaden the applications to automotive use cases such as in-cabin presence detection and monitoring the occupants’ gestures and breathing, aimed at increasing their safety.

Or think about smart homes, where UWB radar sensors could be used to adjust the lighting environment based on people’s presence. In nursing homes, the technology could be deployed to initiate an alert based on fall detection without the need for intrusive camera monitoring.

Enabling such UWB use cases will be facilitated by IEEE 802.15.4ab, the next-generation standard for wireless technology, which is expected to be officially released around year-end. 802.15.4ab will offer multiple enhancements, including radar functionality in IR-UWB devices, turning them into sensing-capable devices.

Fourth gen IR-UWB radio compliant with 802.15.4z/ab

At the 2025 Symposium on VLSI Technology and Circuits (VLSI 2025), imec presented its fourth-generation UWB transceiver, compliant with the baseline for radar sensing as defined by preliminary versions of 802.15.4ab. Baseline characteristics include, among others, enhanced modulation supported by high data rates.

Additionally, imec’s UWB radar sensing technology implements unique features offering enhanced radar sensing capabilities (such as extended range) and a record-high data rate of 124.8 Mbps integrated in a system-on-chip (SoC). Being also compliant with the current 802.15.4z standard, the new radio combines its radar sensing capabilities with communication and secure ranging.

Figure 2 The photograph captures fourth-generation IR-UWB radio system. Source: imec

A unique feature of imec’s IR-UWB radar sensing system is the 2×2 MIMO architecture, with two transmitters and two receivers configured in full duplex mode. In this configuration, a duplexer controls whether the transceiver operates in transmit or receive mode. Also, the TXs and RXs are paired together—TX1-RX1, TX1-RX2, and TX2-RX2—connected by the duplexer.

This allows the radar to simultaneously operate in transmit and receive mode without having to use RF switches to toggle from one mode to the other. This way of working enables reducing the nearest distance over which the radar can operate—a metric that is traditionally limited by the time needed to switch between both modes.

Imec’s full-duplex-based radar can operate in the range between 30 cm and 3 m, a breakthrough achievement. In this full-duplex MIMO configuration, the nearest distance is only restricted by the radar’s 500-MHz bandwidth.

The IR-UWB 2TRX radar physically implements two antenna elements, each antenna being shared between one TX and one RX. The 2×2 MIMO full-duplex configuration, however, enables an array with three antennas virtually, which substantially improves the radar’s angular resolution and area consumption.

Compared with state-of-the-art single-input-single-output (SISO) radars, the radar consumes 1.7x smaller area with 2.5 fewer antennas, making it a highly performant, compact, and cost-effective solution. Advanced techniques are used to isolate the TX from the RX signals, resulting in >30dB isolation over a 500-MHz bandwidth.

Figure 3 This architecture of the 2TRX was presented at VLSI 2025. Source: imec

Signal transmission relies on a hybrid analog/digital polar transmitter, introducing filtering effects in the analog domain for signal modulation. This results in a clean transmit signal spectrum, supporting the good performance and low power operation of the UWB radar sensor.

Finally, in addition to the MIMO-based analog/RF part, the UWB radar sensing device features an advanced digital baseband (or modem), responsible for signal processing. This component extracts relevant information such as the distance between the radar and the object, and an estimation of the angle of arrival.

Proof-of-concept: MIMO radar for in-cabin monitoring

The features of IR-UWB MIMO-based radar technology are particularly attractive for automotive use cases, where the UWB radar can be used not only to detect whether someone is present in the car, for example, child presence detection, but also to map the vehicle’s occupancy and monitor vital signs such as breathing. This capability is currently on the roadmap of several automotive OEMs and tier-1 suppliers.

But today, no radar technology can deliver this functionality with the required accuracy. Particularly challenging is achieving the angular resolution needed to detect two targets at the same (short) distance from the radar. In addition, for breathing monitoring, small movements of the target must be discerned within a period of a few seconds.

Figure 4 The in-cabin IR-UWB radar was demonstrated at PIMRC 2025. Source: imec

At the 2025 IEEE International Symposium on Personal, Indoor and Mobile Radio Communications (IEEE PIMRC 2025), imec researchers presented the first proof-of-concept, showing the ability of IR-UWB MIMO radar system to perform two in-cabin sensing tasks: occupancy detection and breathing rate estimation. In-cabin measurements were carried out inside a small car.

The UWB platform was placed in front of an array of two in-house developed antenna elements placed in the center of the car ceiling, close to the rear-view mirror. The distance from the antennas to the center of the driver and front passenger seats was 55 cm.

The experimental results confirm achieving a high precision for estimating the angle-of-arrival and breathing rate. For instance, for a scenario where both passenger and driver seats are occupied, the UWB radar system achieves a standard deviation of less than 1.90 degrees and 2.95 bpm, for angle-of-arrival and breathing rate estimations, respectively.

Figure 5 Extracted breathing signals for driver and passenger were presented at PIMRC 2025. Source: imec

Imec researchers also highlight an additional benefit of using UWB technology for in-cabin monitoring: the TRX architecture, which is already used in some cars for keyless entry, can be re-purposed for the radar applications, cutting the overall costs.

High data rate opens doors to data streaming applications

In addition to radar sensing capabilities, this IR-UWB transceiver offers another feature that sets it apart from existing UWB solutions: it provides a record-high data rate of 124.8 Mbps, the highest data rate that is still compatible with the upcoming 802.15.4ab standard.

This is about a factor of 20 higher than the 6.8 Mbps data rate currently in use in ranging and communication applications; it results from an optimization of both the analog front-end and digital baseband. The high data rate also comes with a low energy per bit—much lower than consumed by Wi-Fi—especially at the transmit side.

These features will unlock new applications in both audio and video data streaming. Possible use cases are next-generation smart glasses or VR/AR devices, for which the UWB TRX’s small form factor is an added advantage.

Adding advanced ranging to UWB portfolio

In the last two decades, IEEE 802.15.4z-compliant UWB technology has proven its ability to support mass-market secure-ranging and localization deployments, enabling use cases across the automotive, smart industry, smart home, and smart building markets. Supported by the upcoming IEEE 802.15.4ab standard, emerging UWB devices can now also be equipped with radar functionality.

Imec’s fourth generation of IR-UWB technology is the first (publicly reported) 802.15.4ab compliant radar-sensing device, showing robust radar-sensing capabilities; it’s suitable for automotive as well as smart home use cases. The record high data rate also shows UWB’s potential to tap new markets: low-power data streaming for smart glasses or AR/VR devices.

The IEEE 802.15.4ab standard supports yet another feature: advanced ranging. This will enhance the link budget for signal transmission, translating into a fourfold increase in the ranging distance—up to 100 m in the case of a free line of sight. This feature is expected to significantly enhance the user experience for keyless entry solutions for cars and smart buildings.

Not only can it improve the operating distance, but it can also better address challenging environments such as when the signal is blocked by another object, for example, body blocking. Ongoing developments will enable this advanced ranging capability as a new feature in imec’s fifth generation of UWB technology.

The future looks bright for UWB technology. Not only do technological advances follow each other at a rapid pace, but ongoing standardization efforts help shape current and future UWB applications.

Christian Bachmann is the portfolio director of wireless and edge technologies at imec. He oversees UWB and Bluetooth programs enabling next-generation low-power connectivity for automotive, medical, consumer, and IoT applications. He joined imec in 2011 after working with Infineon Technologies and the Graz University of Technology.

Related Content

• Ultra-wideband tech gets a boost in capabilities
• The transformative force of ultra-wideband (UWB) radar
• All Ultra-Wideband (UWB) systems are not created equal
• A short primer on ultra-wideband (UWB) radar technology
• A look at the many lives of ultra-wideband (UWB) standard

The post Next-gen UWB radio to enable radar sensing and data streaming applications appeared first on EDN.

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