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Introduction to the Directional Coupler for RF Applications

AAC - Sat, 01/20/2024 - 02:00
As part of a vector network analyzer (VNA), a directional coupler enables us to characterize a device’s performance by its S-parameters. Read this article to learn more about this important piece of equipment.

Infineon Rolls Out Magnetic Position Sensor Using TMR Technology

AAC - Fri, 01/19/2024 - 20:00
By measuring position with magnetics, the new position sensor frees up system real estate for designers.

Using an inductor to improve an existing design

EDN Network - Fri, 01/19/2024 - 18:38

Here is the circuit in Figure 1 from a previous DI:

Figure 1 Simple local low-noise voltage converter that can be used when a simple negative supply of low voltage is required.

Wow the engineering world with your unique design: Design Ideas Submission Guide

It is simple, and its efficiency can be improved by a very quick change. If you fix both values of R1 and R1′ (making the input power fixed also), the output voltage will have an extremum on the graph Eo=Eo(R2). To facilitate the achievement of this extremum the circuit Figure 1 can be modified as shown in Figure 2; here you can change the value of both R2/R2’ with a single potentiometer (R2).

Figure 2 Added inductance to the output of Figure 1 to improve converter efficiency.

But the main alteration is in adding inductance L to the output. A rather low value of inductance (0.1…1.0 mH) is sufficient. (This low value may be counter-intuitive to the low frequency of the multivibrator, which is less than 1 KHz.)

The negative output voltage slowly increases with an increasing inductance: from -0.36 V @ L=0.1 mH to -0.4 V @ L=1 mH.

The main advantage is in this ~25% increase of the output current (voltage). While the circuit in Figure 1 has its maximum output voltage at -0.31 V, the circuit Figure 2 can provide more than -0.39V with the same load (910 Ω).

This increasing is due to… hmmm…we’ll see the explanation in comments…

The second improvement is in output noise: the same inductance L significantly decreases it—the output capacitor in Figure 2 has half the capacity, nevertheless the amplitude of the output noise here is halved.

The values of components are:  L=0.1…1.0 mH, R1=R1’=5.6 k, R2 =~22 k, C1=C1’=0.1 µF. The output capacitors should be of low impedance.

The circuit consumes less than 1.5 mA from +5 V and produces more than -0.39 V on 910 Ω load. The very first circuit (“Photocell makes true-zero output of the op-amp“) with the same output current consumes about 10 times more power, but its output noise is about 100 times less.

With all these circuits there may be one problem though: they produce a low voltage which is not critical for the host system, but if it somehow drops, the results will be distorted and this can be unnoticed.

To make sure any drop of this voltage will be detected, a circuit in Figure 3 can be used. It can be useful to monitor the coherence of the power in any system with dual power.

Figure 3 Circuit that ensures any drop is voltage is detected that may result in distorted results for converters in Figure 1 and Figure 2.

The green LED indicates “Power Good” and can be used as “Power On” indicator for the whole host system. The resistors R1, R2 should be stable 1% at least. The LED should go on when the output voltage grows to e= -20…-100 mV, depending on your buffer parameters.

For values R1, R2 let:

v1 = Vref + |e|,
v2 = 2.5 + |e|, then
R1 = R2 * ((v1 / v2) – 1)

For the given reference and e = 50 mV:

R1 = 0.63 * R2,

For example, R1=38.8 k, R2=62 k. These values may call for some trim because their total value cannot be too low—the output current should be used sparingly. And the input current of TL431 has far more influence when the current through the voltage divider is very low, so some trim is recommended in this case. Finally, any other reference with output voltage more than 2.5 V can be used, but the values of R1, R2 should be recalculated.

Peter Demchenko studied math at the University of Vilnius and has worked in software development.

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Guerrilla RF’s Q4 revenue almost doubles year-on-year to record $4.7m

Semiconductor today - Fri, 01/19/2024 - 17:46
For fourth-quarter 2023, Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has reported revenue of $4.7m, up 38% on $3.4m in Q32023 and up 95.8% on $2.4m a year ago...

Nichia’s blue and green laser diodes receive Scientific and Technical Award from Academy of Motion Picture

Semiconductor today - Fri, 01/19/2024 - 15:45
Nichia Corp of Tokushima, Japan — the world’s largest gallium nitride (GaN)-based light-emitting diode/laser diode (LED/LD) manufacturer and inventor of high-brightness blue and white LEDs — says that its laser diode technology has been recognized for its contribution to the advancement of the motion picture industry by receiving a Scientific and Technical Awards from the Academy of Motion Picture Arts and Sciences (AMPAS)...

Making the case for a new MEMS fab model

EDN Network - Fri, 01/19/2024 - 12:51

A new Japanese fab service MEMS Infinity, offering 150-mm and 200-mm wafers, aims to facilitate concept design and evaluation all the way through prototyping and mass production. It has joined hands with MEMS development services provider AMFitzgerald to offer a full-service MEMS silicon wafer foundry and expedite the commercialization of thin-film lead zirconate titanate (PZT) MEMS chip technologies.

Sumitomo Precision Products Co. Ltd (SPP)—a manufacturer of high-precision industrial products with three decades of experience in the MEMS industry—has set up MEMS Infinity with a 20,000 square-foot cleanroom in the industrial and technology hub of Amagasaki, Japan.

Figure 1 MEMS Infinity foundry service features PZT-specific patterning equipment and proprietary high-figure-of-merit epitaxial-PZT (epi-PZT) thin film deposition. Source: Sumitomo Precision Products

Sumitomo Precision Products has already been offering MEMS accelerometers and high-precision MEMS gyros under the name of an affiliated company. Now MEMS Infinity is one of the industry’s few foundries providing a portfolio of PZT thin films, piezoelectric materials that transduce electrical energy to mechanical energy and vice-versa.

These thin-film piezoelectric materials enable new architectures for challenging applications such as high-fidelity and low-power audio, low-cost handheld ultrasound imaging, and instant all-in-focus video. PZT is a versatile piezoelectric material that is sought after for MEMS sensors or actuators. It serves high-growth applications—such as true wireless stereo (TWS), automotive LiDAR, medical ultrasound imaging, AR/VR, and haptics—which require precise performance in a robust, ultra-miniaturized form factor.

“As a material that enables many types of emerging, performance-intensive MEMS devices, thin-film PZT is much in demand,” said Alissa Fitzgerald, founder and CEO of AMFitzgerald. “However, PZT requires specific process tools and expertise that are not widespread.” As a result, it’s been difficult to access commercial-quality material during development stages, especially when wafer volumes are low.

Moreover, using poorly controlled research-grade materials during prototyping slows down product development. The strategic alliance between MEMS Infinity and AMFitzgerald aims to address these challenges by integrating design-to-manufacture solutions while using high-quality PZT from day one.

EDN recently spoke with Fitzgerald to find out more details about thin-film piezoelectric materials and how they meet the needs of next-generation MEMS products.

A new generation of commercial MEMS technology

Sensorization is a mega trend continuing across all markets, and it began with our phones being loaded with sensors. At this technological crossroads, we see a new generation of commercial MEMS devices arising amid the manufacturability of thin-film piezoelectric materials, which have been around for decades in bulk format.

“They were used in many industrial and medical applications in solid bulk format, but now we have tools to deposit them on 1-micron or 2-micron thin films on 200 mm wafers,” Fitzgerald said. “These manufacturing tools are available now, so we are finally seeing piezoelectric MEMS products emerge in the market after more than 10 years of development in academia and elsewhere.”

Piezoelectric MEMS now offer performance and manufacturing gains over traditional capacitive MEMS. Some of the early products include speakers inside the earbuds to provide TWS experience and low-cost ultrasound transducers. “While products like ultrasound transducers have been made from bulk PZT for 40 to 50 years, now we can produce them with thin-film materials, enabling much lower cost transducers, leading to lower cost ultrasound diagnostic systems,” she added.

Figure 2 MEMS applications using PZT thin films include inkjets, autofocus, ultrasound, microphones/speakers, micromirrors, pumps, fluidics, and gyroscopes. Source: AMFitzgerald

It’s important to note that all the high-volume MEMS we see today are based on capacitive deep silicon etch architecture. However, with the advent and maturation of thin film piezoelectric, we see many devices redesigned in piezoelectric architecture. “Many companies are now seeking performance and manufacturing gains compared to the 1990s era traditional capacitive MEMS devices,” Fitzgerald said.

It’s also worth mentioning that while PZT is emerging as the most versatile material, aluminum nitride (AlN) was the first piezoelectric thin film to be commercialized in high volume for RF filters. Companies like Broadcom chose AlN because it’s best for MEMS-CMOS monolithic integration. “It enabled CMOS-MEMS integration on the same piece of silicon and the circuitry surrounding it, and that’s essential for RF filters,” she added.

“We are focused on PZT because it’s a more versatile material that can address many more applications and MEMS device types,” Fitzgerald said. “It spans both sensing and actuating functions and also enables wafer-level or chip-level system electronics integration.”

PZT’s technical merits aside, however, the critical issue is where fabless MEMS companies can access thin film PZT production, especially when the large MEMS fabs are very selective of their customers.

A new MEMS fab model

During the 1980s, the CMOS industry created the fabless business model by forming alliances with design partners to bridge the gap between fabless companies and foundries. However, MEMS foundries have yet to embrace the design partner model. Here, Fitzgerald pointed out that North America currently doesn’t have a MEMS fab for thin film PZT.

“We have been seeking PZT source for quite a while as our clients have been approaching us for this material,” she told EDN. “Large MEMS fabs don’t want to participate in the early-stage development because wafer volumes are small.” As a result, access to PZT has been limited, and there has been an unmet need for small- to medium-level production of high-quality thin films.

Efficient PZT MEMS development requires access to stable, high-performing PZT films, and R&D fabs don’t satisfy this need. The alliance will provide AMFitzgerald access to MEMS Infinity’s thin-film PZT. Furthermore, access to proprietary data on thin-film PZT will improve the accuracy of MEMS design and modeling, minimizing the need for design-build-test cycles.

“When you are developing a new MEMS device, you want to work with the exact material you are using in production,” said Fitzgerald. “So, we aim to lower the barrier for access to this material as well as have foundry-specific MEMS design.” That will inevitably speed up time to market and shrink development costs.

AMFitzgerald will get access to MEMS Infinity’s proprietary data, which will significantly enhance the design and modeling phases of MEMS development. “We can engineer the design specifically for their material, and that helps to reduce design and build test cycles,” she added. “MEMS devices take longer to develop because there are a lot of iterations between the design and foundry stages, and we can reduce that now to help unlock the potential of MEMS devices.”

Figure 3 The alliance will lower the barrier to PZT materials while facilitating design-to-production MEMS service. Source: AMFitzgerald

The alliance between AMFitzgerald and MEMS Infinity is based on a tried-and-tested business model that has been very successful in the CMOS industry, where TSMC is most notable for its design partners’ alliance. “CMOS foundries understood a long time ago that you need design partners to bridge the gap between a fabless company and foundry, but for some reason, this hasn’t taken hold in the MEMS industry yet,” Fitzgerald said. “We think we are going to be the first to have this kind of close collaboration with a foundry.”

Collaboration modus operandi

In MEMS design, prototyping is the third vital step after design and feasibility, and it tends to occur at a research facility. Custom chip designs are validated by prototypes built in-house before transfer to the foundry for production. That’s followed by foundry selection, and then the design must be adjusted for the foundry toolsets. Next, you must move on to ramping up production.

This alliance between AMFitzgerald and MEMS Infinity seeks to provide a shortcut for PZT to facilitate design on the foundry’s material properties and qualities. Moreover, prototyping will occur on the production-ready material from day one at the foundry. In other words, the tie-up aims to shorten the commercialization timeline of MEMS devices.

The two MEMS partners aim to provide the complete PZT development solution. AMFitzgerald will offer MEMS design, modeling and product development services, while MEMS Infinity will provide production for thin films and versatile foundry services. MEMS Infinity will provide production proven PZT processes at its fab.

AMFitzgerald will facilitate global access to MEMS Infinity’s thin-film PZT while using its proprietary thin-film PZT data to improve the accuracy of MEMS design and modelling. That, in turn, will minimize the need for design-build-test cycles and accelerate product development. Consequently, it will unlock the commercial potential of performance-intensive piezoelectric MEMS devices such as ultrasound transceivers, micro-speakers, micromirrors, and microfluidics.

“We aim to provide integrated product development experience, which has been missing in the MEMS industry,” Fitzgerald concluded. “We want to facilitate MEMS Infinity’s high-quality material, which we used for 20 years to produce piezoelectric gyroscopes.”

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Groundbreaking AI Innovation Simplifies Robot Integration in Manufacturing

ELE Times - Fri, 01/19/2024 - 11:49

In a pioneering development, researchers at the Department of AI Machinery, part of the Korea Institute of Machinery and Materials (KIMM), have unveiled an artificial intelligence (AI) technology designed to streamline the integration of robots into manufacturing processes. Currently undergoing testing by EV parts manufacturers, this versatile AI solution is poised to revolutionize various sectors, including automobile manufacturing, machine part production, assembly, and other production processes.

The innovative technology, developed for the first time globally, promises to simplify the complex task of integrating robots into manufacturing. Researchers at KIMM have specifically tailored this AI technology for easy integration into various manufacturing processes. Currently, it is in the testing phase with electronic component producers, with plans to expand its application to a broader range of manufacturers in the future.
The AI-driven robot employs the “Large Language Model (LLM)” and operates within a virtual environment. This technology is adept at understanding user commands and automatically generating and executing tasks for the robot. It facilitates the creation of task sequences and movements through voice or text commands. By leveraging pre-learning in a virtual space, the technology selects optimal work points for the site, streamlining the work process with automatic object detection and collision avoidance capabilities.

Traditionally, the integration of robots into manufacturing sites often necessitated modifying the site to accommodate the robot, limiting the range of tasks robots could perform. The newly developed technology addresses this challenge by enabling robots to efficiently handle specific task assignments with minimal on-site modification, thanks to pre-learning in a virtual space. Ongoing on-site demonstration tests indicate that this groundbreaking AI solution is well-equipped to handle various future scenarios at manufacturing sites.

The post Groundbreaking AI Innovation Simplifies Robot Integration in Manufacturing appeared first on ELE Times.

AI Leading the Path to the Future of Communication Technology

ELE Times - Fri, 01/19/2024 - 09:53

In an exciting leap toward the next generation of wireless technology, researchers at UBC Okanagan, led by Dr. Anas Chaaban from the UBCO Communication Theory Lab, are tapping into the power of artificial intelligence (AI) to revolutionize communication architectures. The goal is to achieve faster data transmission, energy efficiency, and more in the evolving landscape of mobile networks beyond 5G.

Dr. Chaaban, an Assistant Professor at UBCO’s School of Engineering, emphasizes that the upcoming wave of communication technology goes beyond mere speed. The research aims to create a theoretical wireless communication architecture that can handle increased data loads and enable instantaneous communication among devices, consumers, and the environment.

The researchers advocate for intelligent architectures to address the demands of massive connectivity, ultra-low latency, high reliability, quality experience, energy efficiency, and reduced deployment costs. Dr Chaaban proposes a departure from traditional communication techniques and advocates for leveraging recent advances in AI to adapt to emerging technology challenges.

Using transformer-masked autoencoders, the team is developing techniques to enhance efficiency, adaptability, and robustness. Dr. Chaaban elaborates on their innovative approach of breaking down content, such as images or videos, into smaller packets for transport. AI is then employed to recover lost packets at the recipient, effectively reconstructing the content.

Integrating virtual reality into everyday communications is a key focus of next-generation technology. Dr Chaaban envisions AI’s role in creating complex architectures that propel communication technologies forward, particularly in adapting to emerging technologies like virtual reality. The collective efforts to address these intricacies are expected to usher in an era of adaptive, efficient, and secure communication networks.

The post AI Leading the Path to the Future of Communication Technology appeared first on ELE Times.

Researchers Create World’s First Graphene Semiconductor

AAC - Fri, 01/19/2024 - 02:00
Georgia Tech research could bring graphene's benefits for semiconductors in microelectronics.

Multichannel digital isolators withstand 8 kV

EDN Network - Thu, 01/18/2024 - 23:03

Novosense has expanded its NSI824x series of digital isolators with quad-channel devices that provide an isolation rating of 8 kV and a creepage distance of 15 mm. The new NSI824xWx ICs perform signal isolation and level shifting in applications ranging from solar inverters and energy storage to industrial automation and electric vehicles.

Qualified to UL 1577 safety standards, the NSI824xWx isolators deliver robust EMC performance with high levels of protection against system-level ESD, EFTs, and voltage surges. In addition to an insulation voltage of up to 8 kVRMS, the parts furnish chip-level ESD HBM protection to ±8 kV and common-mode transient immunity of up to 200 kV/µs.

The digital isolators handle channel speeds of up to 150 Mbps. Configuration options for channel direction include four forward channels, three forward channels and one reverse channel, or two forward and two reverse channels. An input voltage range of 2.5 V to 5.5 V accommodates a wide variety of digital interfaces. Power consumption is 1.5 mA/channel at speeds of 1 Mbps.

Housed in ultra-wide-body SOWW-16 packages, the NSI824xWx digital isolators operate over a temperature range of -55°C to +125°C. A request form for samples can be found on the product page linked below.

NSI824x product page

Novosense Microelectronics

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Power-stingy 64-bit MPU targets IoT edge

EDN Network - Thu, 01/18/2024 - 23:02

The RZ/G3S 64-bit general-purpose microprocessor from Renesas boasts standby power consumption of 10 µW for use in IoT edge and gateway devices. It also provides fast Linux bootup and a PCIe Gen2 interface that enables connectivity with 5G wireless modules.

At the heart of the RZ/G3S is an Arm Cortex-A55 CPU core with a maximum operating frequency of 1.1 GHz. Two Arm Cortex-M33 cores serve as sub-CPUs operating at 250 MHz. MPU workloads can be distributed to the sub-CPUs, allowing the device to efficiently handle tasks, such as receiving data from sensors, controlling system functions, and managing power systems.

The MPU’s power management system reduces power consumption to very low levels by turning off some of the independent power domains. A DDR self-refresh function allows the RZ/G3S to retain DRAM data, while also enabling fast Linux startup. Quick startup permits IoT devices, which frequently operate intermittently, to conserve power and extend battery runtime.

In addition to PCIe, the RZ/G3S furnishes Gigabit Ethernet, CAN, and USB interfaces. Useful for IoT applications, like home gateways, smart meters, and tracking devices, the microprocessor features tamper detection to ensure data security.

The RZ/G3S microprocessor is available now in 14×14-mm and 13×13-mm BGA packages.

RZ/G3S product page

Renesas Electronics

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TDK releases ultrasonic sensor demo kit

EDN Network - Thu, 01/18/2024 - 23:02

An evaluation kit from TDK showcases its USSM1.0 PLUS-FS ultrasonic sensor module for designs requiring obstacle detection and distance measurement. The sensor operates in harsh industrial environments and can be used in autonomous mobile robots and autonomous guided vehicles.

The starter kit comprises a demo board with a USB-A to micro-B cable for connecting to a PC, two ultrasonic sensor modules, two sensor cables, and two gaskets. Also included is software for monitoring the sensor in various operating modes.

The USSM1.0 PLUS-FS time-of-flight sensor detects objects using ultrasonic waves and includes an integrated driver and signal processor. This signal-processing ASIC calculates signal propagation time with a repetition rate of up to 50 samples/s. Along with a field of view up to 90°, the sensor provides a measurement range of 18 cm to 200 cm in single mode and 4 cm to 200 cm in pitch-and-catch mode. Power consumption is typically 5.5 mA when operating with a 12-V supply voltage.

The demo kit (order code: Z25000Z2910Z001Z21) is available for purchase from both DigiKey and Mouser for approximately $300 each. Use the product page link below for more information on both the USSM1.0 PLUS-FS ultrasonic sensor and the demonstration kit.

USSM1.0 PLUS-FS product page

TDK Electronics 

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GaN FETs serve as drop-in SiC replacements

EDN Network - Thu, 01/18/2024 - 23:02

Transphorm announced two SuperGaN FETS in 4-lead TO-247 packages, offering an original design option or alternative to 4-lead silicon or SiC devices. The TP65H035G4YS and TP65H050G4YS are both 650-V FETs with an on-resistance of 35 mΩ and 50-mΩ, respectively. Based on the company’s GaN-on-silicon substrate process, the devices are well-suited for high-volume manufacturing on silicon production lines.

The two SuperGaN FETs support power supplies at 1 kW and higher in such applications as data centers, renewables, and industrial equipment. Their 4-lead configuration provides a Kelvin source terminal to enhance switching efficiency. In a hard-switched synchronous boost converter, the 35-mΩ 4-lead FET reduced losses by 15% at 50 kHz and 27% at 100 kHz compared to a SiC MOSFET with comparable on-resistance.

The TO-247-4L devices offer the following core specifications:

The 50-mΩ TP65H050G4YS is available now. The 35-mΩ TP65H035G4YS is sampling and slated for release in Q1 2024.

TP65H035G4YS datasheet

TP65H050G4YS datasheet

Transphorm

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LED backlight driver offers dual LCD bias

EDN Network - Thu, 01/18/2024 - 23:01

Kinetic Technologies’ KTZ8868 integrates in a single chip an 8-LED backlight driver and 250-mA LCD bias power for up to 12-in. display panels. High switching frequency allows the use of a smaller inductor and capacitor, while an input operating range of 2.7 V to 5.5 V accommodates 1-cell lithium-ion batteries or a 5-V supply.

The LED driver has two step-up converters, and each converter drives four current sinks. Each of the eight current sinks can regulate up to 30 mA. Maximum boost output voltage is 40 V. The LCD bias power section comprises a step-up converter, LDO regulator, and an inverting charge pump to generate dual outputs, whose voltage is programmable via an I2C interface.

Built-in protection features of the KTZ8868 include inductor current limit, output short circuit, output overvoltage, LED fault (open or short), and thermal shutdown. The part is housed in a 5×5-mm, 32-lead WQFN package.

KTZ8868  product page

Kinetic Technologies

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Coherent launches VCSEL-based illumination module platform for short- and mid-range LiDAR in automotive safety and industrial robotic vision

Semiconductor today - Thu, 01/18/2024 - 21:23
Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA has introduced of an illumination module platform for short- and mid-range light detection & ranging (LiDAR) in automotive safety and robotic vision in industrial applications...

Getting To Know the Gerber File Format and File Names

AAC - Thu, 01/18/2024 - 20:00
Learn the details of the Gerber file format for PCB layout, including function, common layers, file names, extensions, and revisions to the Gerber standards.

Digital POT Resistor with Display

Reddit:Electronics - Thu, 01/18/2024 - 19:14

Hello, I bought a digital POT resistor to replace the one installed in my GameCube console. I plan to mount this underneath or on the side of the console to easily adjust it as some reproduction games work at different settings. I want to attach a display to the resistor to display what the ohms are currently at and am wondering if there is an easy way to do this. I searched online, only found components to display voltage. Appreciate the help!

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OIF unveils CEI-112G-XSR+-PAM4 Extended Extra Short Reach IA

Semiconductor today - Thu, 01/18/2024 - 19:13
The Optical Internetworking Forum (OIF) has published a new Implementation Agreement (IA) for Common Electrical I/O (CEI) CEI-112G-XSR+-PAM4 Extended Extra Short Reach...

Transphorm launches two 4-lead TO-247 GaN FETs for high-power server, renewable, industrial power conversion

Semiconductor today - Thu, 01/18/2024 - 16:52
Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and makes JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — has announced the availability of two new 650V SuperGaN devices in a 4-lead TO-247 package (TO-247-4L)...

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