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SweGaN AB of Linköping, Sweden — which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecoms, satcoms, defense and power electronics applications — has appointed Stefan Axelsson as chief financial officer and Anders Lundskog as R&D manager. Axelsson has joined the executive management team, and Lundskog has joined in a new R&D role...

Infineon Technologies AG of Munich, Germany has partnered to combine its gallium nitride (GaN)-based power solutions with the circuit topology and control technology of Tokyo-based OMRON Social Solutions Co Ltd, enabling what is reckoned to be one of Japan’s smallest and lightest vehicle-to-everything (V2X) charging systems. The partnership is expected to further drive innovation towards wide-bandgap materials in power supplies, helping to accelerate the transition to renewable energies, a smarter grid, and the adoption of electric vehicles, while fostering decarbonization and digitalization...

In a groundbreaking announcement, Infineon Technologies AG has joined forces with OMRON Social Solutions Co. Ltd., a trailblazing company in social systems technology. This strategic partnership integrates Infineon’s cutting-edge gallium nitride (GaN) based power solutions with OMRON’s innovative circuit topology and control technology, resulting in the creation of one of Japan’s smallest and lightest vehicle-to-everything (V2X) charging systems.

The collaboration leverages Infineon’s CoolGaN technology within the KPEP-A series, a multi-V2X system by OMRON Social Solutions. This system achieves a 60% reduction in size and weight compared to conventional designs while offering a charging capability of 6 kW. With the integration of Infineon’s CoolGaN solution, the V2X system exhibits increased power efficiency, with improvements exceeding 10% at light load and approximately 4% at rated load.

OMRON Social Solutions has enhanced its EV charger and discharger system, enabling bi-directional charging and discharging paths between renewable energy sources, the grid, and EV batteries. This development aligns with broader efforts to accelerate the transition to renewable energies, promote a smarter grid, and facilitate the widespread adoption of electric vehicles, thereby advancing decarbonization and digitalization initiatives.

Adam White, Division President of Power & Sensor Systems at Infineon, expressed excitement about the collaboration, stating, “Our CoolGaN-based solutions directly contribute to speeding up the transition to renewable energies, reducing CO2 emissions, and driving decarbonization. It will also make charging electric vehicles easier and more convenient for consumers, helping to overcome one of the biggest barriers to EV adoption.”

Atsushi Sasawaki, Managing Executive Officer and Senior General Manager for the Energy Solutions Business of OMRON Social Solutions highlighted the significance of the collaboration, stating, “Having access to a broad portfolio of wide bandgap (WBG) solutions significantly increases the functionality, performance, and quality of our products. We look forward to further developing GaN- and SiC-based power solutions with Infineon to help drive renewable energy and electric vehicles.”

Wide bandgap semiconductors made of silicon carbide and gallium nitride play a pivotal role in this collaboration, offering greater power efficiency, smaller size, lighter weight, and lower overall cost than conventional semiconductors. With over two decades of heritage in SiC and GaN technology development, Infineon is positioned as a leading power supplier, addressing the need for smarter, more efficient energy generation, transmission, and consumption.

The post Infineon and OMRON Social Solutions Collaborate to Revolutionize Electric Vehicle Charging in Japan appeared first on ELE Times.

Author: STMicroelectronics

Update, December 21, 2023

The STM32WBA52xx are now available in a QFN32 package measuring only 5 mm x 5 mm as opposed to the QFN48 package of 7 mm x 7 mm. Integrators will gravitate towards the models with fewer pins for projects that use fewer interfaces and timers, which are often used for wake-up capabilities, among other things. While the first STM32WBA maximized features, we also know that not all developers need 16 wake-up pins and would rather get the benefits of a smaller package. The QFN32 housing can thus help them tailor their systems to save space to create a more compact and cost-effective design.

Original publication, March 10, 2023

The STM32WBA is the first wireless STM32 to open the way for a Bluetooth Low Energy 5.3 and SESIP Level 3 certification. At its heart, the new series uses an architecture inspired by the STM32U5. We find a similar Cortex-M33, but running at 100 MHz, and flash capacities varying from 512 KB to 1 MB. While the STM32WBA has a dedicated firmware package (STM32CubeWBA), it supports current profiles for STM32WB microcontrollers, thus vastly facilitating the transition from the STM32WB to the STM32WBA. ST also improved the radio to reach +10 dBm in output power, making it the first wireless MCU of its kind to provide such a robust link.

A new architectural foundation A Cortex-M33 The STM32WBA

The STM32WBA represents a new approach to our wireless MCUs. The original STM32WB had a Cortex-M0+ running the radio stack and a Cortex-M4 for the application. The STM32WBA uses a single Cortex-M33 with a score of 407 in CoreMark, which is twice the performance of the previous generation. Beyond computational improvements, the new architecture simplifies developments and provides new features. For instance, the STM32WBA offers an interface for touch sensors that could serve industrial applications and one advanced timer for motor control.

Similarly, the new device supports a background autonomous mode (BAM). It enables peripherals to remain functional and use direct memory access (DMA) without waking the CPU. Engineers can perform sensor monitoring operations using BAM through I2C, SPI, or UART, increasing the usefulness while keeping the power consumption low. Additionally, the STM32WBA supports low-power STOP0, STOP1, and standby modes that developers find in the STM32U5, but ST tweaked them to go rapidly from a running mode with connectivity to Standby mode with the radio context written in the memory. Standby mode with RTC only needs 200 nA, and the Stop mode with 64 KB of RAM demands 16.3 µA.

The first STM32WBAs A more robust signal

The radio also received significant optimizations as it’s the first in this kind of product to reach +10 dBm in output power, thus offering a more robust wireless link. The new performance can make a significant difference when connecting to a device despite an obstruction diminishing the signal. The STM32WBA also supports important features like long-range transmissions, a high-speed connection of up to 2 Mbps, and advertising extensions to optimize communication management. Moreover, while the STM32WBA52 relies on LDOs, future models in the series will also feature a switched-mode power supply. Similarly, while the STM32WBA52 only focuses on, future devices will support Matter, OpenThread, and Zigbee.

A new security paradigm

The presence of a Cortex-M33 in STM32WBA devices also means that, for the first time, our wireless microcontrollers can help provide a SESIP Level 3 certification. Developers can use functionalities like TrustZone, Trusted Firmware, Secure Boot, Secure Debug, and more to bolster their security and protect sensitive applications from the radio stack. Thanks to ST software packages and firmware, developers can more easily implement privileged and unprivileged sections to safeguard sensitive information like cloud credentials or user data.

Existing solutions within the STM32Trust initiative will help users implement these safeguards. Furthermore, because the STM32WBA takes cues from the STM32U5, developers can reuse some of the information or documentation. Nevertheless, ST will have specific content on the STM32 Wiki to address issues related to wireless stacks. The new devices will also include mechanisms protecting against physical attacks, such as anti-tamper pins, a unique hardware key, and more.

Getting started NUCLEO-WBA52CG

The best way to start creating a proof-of-concept is to grab the new NUCLEO-WBA52CG, a new type of Nucleo board where the microcontroller sits on a removable daughter card. The solution can help engineers more easily swap between microcontrollers, making the device more portable. By using the board, developers could determine whether their application can use ST’s basic Bluetooth stack, which helps save memory, or if they require the full-featured version. ST will also provide bare metal middleware and firmware using AzureRTOS. A software package using FreeRTOS will also be available on GitHub Hotspot, which already contains a repository for a web interface supporting the new device.

Read the full article at https://blog.st.com/stm32wba/

The post STM32WBA, 1st wireless Cortex-M33 for more powerful and more secure Bluetooth applications #STM32InnovationLive appeared first on ELE Times.

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Epiwafer and substrate maker IQE plc of Cardiff, Wales, UK has appointed Jutta Meier to its board as chief financial officer, effective from 22 January...

Epiwafer and substrate maker IQE plc of Cardiff, Wales, UK has appointed Rina Pal-Goetzen as VP of government affairs...

The bistable load switch is made on two comparators. The load is switched on and off sequentially by applying a voltage of two different levels to the input of the device.

Earlier in [1], a new class of bistable elements was proposed—two-threshold thyristors, which are switched on/off from one state to another when control voltages of two levels (“High” or “Low”) other than zero are applied to the input of the thyristor.

Wow the engineering world with your unique design: Design Ideas Submission Guide

The bistable load switch, Figure 1, is designed for switching the load when an Uon or Uoff voltage is applied to the input of the device. The device contains two comparators U1.1 and U1.2, as well as an output transistor Q1, for example, 2N7000.

Figure 1 A bistable switch controlled by input voltage levels, with separately adjustable load on and off thresholds.

The device works as follows. Its input (inverting inputs of comparators U1.1 and U1.2) is briefly supplied with a voltage of a certain level (Uon or Uoff). The comparators comparison noninverting inputs are supplied with voltages of two levels from the potentiometers R2 and R3. When the switching voltage Uon (Uon<Uoff) is applied to the input of the device, the comparator U1.1 switches. At its output Uout1, the voltage switches from the conditional level of the logical unit to the level of the logical zero. The LED indicates the enabled state of the device. On the drain of the transistor Q1 (Uout2), on the contrary, the voltage changes from the level of logical zero to the level of logical unit. Through the resistor R10, the high-level voltage enters the inverting input of the comparator U1.1, fixing his condition.

To return the device to its initial state (disconnecting the load), a voltage of a higher level (Uoff) is applied to the input, which is able to switch the state of the second comparator U1.2. When switching this comparator, the voltage at the inverting input of the comparator U1.1 drops to zero, the circuit returns to its original state.

Such a device, with some simplification and modification, can be placed in the DIP6 housing, Figure 2. Switching the output signal level from the conditional level 0 to 1 occurs when a low-level voltage Uon is briefly applied to the input of the device, a return to the initial state occurs when a high-level voltage Uoff is applied to the input.

A typical circuit for switching on such a chip is shown in Figure 3. External adjustment elements R1 and R2 are used to adjust the on and off switching thresholds (Uthr1 and Uthr2).

Figure 2 A bistable switch, as well as a possible of integrated circuit based on it.

Figure 3 Variants of a bistable switch chip with external switching thresholds control circuits, or internal unregulated ones, and the possibility of using the circuit in a DIP4 case for an unregulated version with fixed switching thresholds.

If using a resistive divider R1–R3 to set constant on and off levels of Uthr2 and Uthr1, then the bistable switch can be placed in the DIP4 chip housing, Figure 3, which has power terminals as well as input and output. To obtain the switching levels, which do not depend on the supply voltage, you can use a simple voltage regulator (Zener diode) built into the microcircuit to power the resistive divider R1–R3.

Michael A. Shustov is a doctor of technical sciences, candidate of chemical sciences and the author of over 800 printed works in the field of electronics, chemistry, physics, geology, medicine, and history.

 Related Content

• Improved comparators distinguish between A = B = 0 and A = B = 1 states to enable better designs
• The electronic analogue of the push-button switcher
• Rectangle and triangle waveform function generator
• Load switch-timer with multi-point control over two wires

References

1. Shustov M.A. Two-threshold ON/OFF thyristors, switchable by the input signal level // International Journal of Circuits and Electronics. – 2021. – V. 6. – P. 60–63. Pub. Date: 09 December 2021. https://www.iaras.org/iaras/home/computer-science-communications/caijce/two-threshold-on-off-thyristors-switchable-by-the-input-signal-level

The post Bistable switch made on comparators appeared first on EDN.

In a a pre-close trading update for full-year 2023, epiwafer and substrate maker IQE plc of Cardiff, Wales, UK says that it expects revenue to be at least £115m. This is down 31% on 2022’s £167.5m. However, it reflects a more than 20% increase from first-half to second-half 2023, in line with previously issued guidance. IQE expects this to result in an adjusted EBITDA (earnings before interest, tax, depreciation and amortization) of at least £3m and a net debt position of about £3m...

Ideal limit-sensing solution for appliances and automatic testing equipment (ATE) applications

Littelfuse, Inc., an industrial technology manufacturing company empowering a sustainable, connected, and safer world, is excited to announce the availability of the MATE-12B Reed Switch Series. These sub-miniature reed switches provide longer life and higher reliability than currently available in existing 12.7 mm reed switches, achieving millions of cycles. Their extensive longevity exceeds the requirements for automatic test equipment and appliance applications. View the video.

The MATE-12B is a normally open switch with a 12.7 mm x 1.8 mm (0.276” x 0.071”) glass envelope, which can switch up to 200 Vdc 10 W. They provide a high insulation resistance of 1012 ohms (minimum) and a low contact resistance of less than 100 milli-ohms.

The MATE-12B Reed Switch Series is ideally suited for markets that require long-life cycles and high reliability, such as:

• Automatic Test Equipment (ATE) for power semiconductor testing,
• Appliances, and
• Other limit switching applications.

The MATE-12B key benefits and differentiators include:

• High reliability and prolonged lifecycle: Extensively tested and proven to achieve millions of operation cycles, a significant advantage over currently available 7 mm reed switches.
• Design flexibility: The sub-miniature magnet size and hermetically sealed glass envelope enable use in more challenging environments and applications.
• PCB space savings: Extremely compact size and light weight help reduce the end product’s size.
• Suitable for harsh environments: Hermetically sealed and meets cULus requirements.

“The MATE-12B is an extension of our existing product line, which helps our end customers with significantly higher efficiency and longer lifetime,” said Wayne Wang, Global Product Manager at Littelfuse. “The minimal risk of failure is especially critical to limit switching applications such as in appliances and power semiconductor automatic test equipment.”

Availability

The MATE-12B Reed Switch Series is available in bulk quantities of 1000 pieces. Place sample requests through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com.

The post Latest Littelfuse Sub-miniature 12.7 mm Reed Switches Provide High-Reliability, Longer Life Cycles appeared first on ELE Times.

For its fiscal first-quarter 2024 (to end-November 2023), LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has reported revenue of $1.65m, down slightly on $1.695m a year ago but up on $1.453m last quarter...

Brand new (old stock) IC, no signs of marking tampering. https://preview.redd.it/s2uuxyc61scc1.png?width=756&format=png&auto=webp&s=6026bad928eadcc0bebd45e5ba606745e350fb10 submitted by /u/Al3x_Y [link] [comments]

Courtesy: Mouser Electronics

Early-stage Internet of Things (IoT) concepts defined sensors that linked directly to the cloud. However, as vertical industries started seriously evaluating IoT architectures to extract greater business value, it became clear that this one-size-fits-all approach was impractical for various reasons.

Consider just a few of the implications of a cloud-first model in industrial IoT (IIoT) deployments:

• Data and device security: The potential of insecure endpoints communicating directly with the cloud meant hackers could exploit vulnerabilities to access sensitive industrial networks.
• Runaway networking costs: Sensor-to-server data transmissions (especially over public networks) can be so costly they prohibit scaling to the thousands of nodes required by many IIoT deployments. Add large volumes of measurement and status data generated by industrial sensors, and network congestion, packet delays, and inefficient bandwidth usage abound.
• Power consumption of always-on sensor nodes: Remote sensor nodes require continuous connection to the network and an energy source. This is particularly challenging in remote settings like mining and agriculture, where limited access can mean replacing batteries or troubleshooting networks costs thousands of dollars.

New classes of secure hardware, networking, and battery technology emerged from these challenges to redefine how IoT systems were architected and industrial devices were designed. The technology revolution began by combining security and energy efficiency in edge-centric silicon.

The Low-Power Foundations of IoT Processors

Introduced as real-world IoT requirements were being defined in 2009, ArmCortex-M0 CPUs offered the ability to operate solely on 16-bit “thumb” instructions rather than the 32-bit instructions required by its predecessors.

Thumb instructions’ compact encoding method enables code density improvements of roughly 30 percent on processors like the Cortex-M0, which has a cascading effect on memory usage (lower), die sizes (smaller), power consumption (less), and ultimately cost (reduced). Fast-forward to today and devices based on the Arm Cortex-M33 architecture feature thumb instructions and built-in hardware security via features like TrustZone.

TrustZone delivers hardware-based data and device security through a secure root of trust (RoT). When combined with the energy efficiency of Cortex-M33 CPU cores, TrustZone creates secure, battery-powered IoT devices that can operate for extended periods in remote settings. It also doesn’t detract from CPU performance, as Cortex-M33 processors deliver an impressive 1.5 DMIPS/MHz and 4.09 CoreMark/MHz for handling complex tasks at the edge to reduce reliance on centralized cloud processing.

From the beginning of IoT rollouts through today, Cortex-M-class chips continue to deliver possibilities for various IoT use cases.

The Rise of LPWAN

The success of energy-efficient IIoT edge nodes is not only a result of their host processor but also how they connect. In the late 2000s, the advent of 4G technology signaled the decline of earlier networks, highlighting the need for a new low-power, wide-area networking (LPWAN) technology that facilitates long-range communication for IoT devices.

LPWAN technologies such as LoRa have emerged as an appealing method for linking battery-powered IoT devices to networks. Its long-range capabilities and low energy consumption make it an ideal choice for IIoT applications like asset tracking, environmental monitoring, industrial automation, smart agriculture, and smart cities.

Today’s LoRa transceiver modules facilitate LPWAN communications over distances of up to 15km while consuming approximately 40mA of current during transmission. Typically, LoRa modules interface with host processors like Cortex-M-class devices through UART and communicate via ASCII commands, streamlining integration with IoT devices.

These transceivers pair with sub-GHz antennas that meet the frequency requirements of LPWAN networks, many of which are available in compact SMD form factors that fit the space constraints of edge devices. In addition to supporting protocols like LoRaWAN, some of these antennas also support short-range wireless technologies like Wi-Fi, Zigbee, and Bluetooth to enable the creation of backhaul-enabled wireless sensor networks.

Lithium Battery Technology Advances for IoT Edge Nodes

Thanks to the availability of secure, energy-efficient computing technology and LPWAN networking, the idea of battery-powered IIoT sensor nodes became a reality. The IIoT industry embraced the concept of battery-powered sensors, and demand for dependable, high-density power sources increased.

Lithium-ion batteries emerged as the preferred choice for powering these sensors thanks to consistent power density and reliability improvements. These advancements yielded the ability for IoT devices to operate for extended periods on a single battery charge—a critical requirement for many agriculture, mining, and industrial applications. Meanwhile, the improved reliability of lithium-ion battery technology led to reductions in maintenance and operational expenses while ensuring uninterrupted data collection and communication.

A Qoitech study on the compatibility of LoRaWAN technology and coin cell batteries highlighted the pairing’s potential in enduring, low-power wireless IoT sensor nodes. In the study, researchers tested the performance of coin cell batteries using a battery-profiling tool. The tool measured a 40mA (peak current) LoRaWAN power profile with an exit condition that triggered when the voltage dropped below 0.6V or 2V. The study provides insightful results, revealing disparities in coin cell performance among manufacturers that are particularly evident at higher current levels. It also proved that CR2032 and CR2450 are viable options for powering LoRaWAN devices.

This harmony between LPWAN technology and high-density lithium-ion batteries has helped propel the IIoT landscape, enabling new energy-efficient wireless sensor nodes. Lithium coin cell batteries have emerged as the go-to power source for these devices due to their compact size, impressive energy density, and extended lifespan. The availability of diverse lithium coin cell battery options—available in various chemistries and configurations tailored to specific IoT applications—gives developers freedom of choice.

Mouser Electronics offers a comprehensive selection of coin cell batteries, enabling developers to select the most suitable power source for their IoT projects. Additionally, many tools are available to help developers evaluate battery performance under practical conditions. These can ensure IoT sensor nodes operate reliably over long lifecycle deployments and help identify the most efficient and cost-effective power solutions for a given application.

Future of Technology for the Industrial IoT

Recent IIoT technology advancements have not been limited to the edge; they’ve also extended to the control layer. These improvements have led to multicore systems-on-chips (SoCs) featuring multiple CPU or graphics cores, integrated neural network accelerators, and dedicated IP blocks for executing analog, security, and other workloads.

These high-performance chipsets almost always contain multiple high-speed I/O interfaces that streamline system integration in a number of deployment contexts. They are also candidates for embedded virtualization using technologies like hypervisors and single-root I/O virtualization (SR-IOV) that partition on-chip cores, memory, and I/O resources. As a result, multiple mixed-criticality workloads can run and execute simultaneously on a single physical processor, maximizing resource utilization and reducing overall size, weight, power consumption, and cost versus multiprocessor solutions.

Elsewhere, networking standards like Ethernet Time-Sensitive Networking (TSN) are rising. TSN introduces deterministic communication capabilities from the control layer to sensor nodes and enterprise systems for fine-grained timing control, precision device management, and task-oriented workflows like virtual programmable logic controllers (vPLCs). The convergence of these technologies is expanding functionality as IIoT nodes continue to evolve.

The evolution of IIoT technology building blocks started at the far edge and continues today at the control layer. For instance, the emergence of multicore SoCs with integrated accelerators and the adoption of networking standards like Ethernet TSN have paved the way for improved device management and the implementation of containerized enterprise applications.

The post Building Blocks for IIoT Edge Nodes appeared first on ELE Times.

DFI, a global leader in embedded motherboards and industrial computers, has announced their participation in the Embedded Tech India Expo for the first time. In collaboration with distribution partner Dynalog, they will be showcasing their range of rugged industrial-grade products, industrial motherboards, and embedded systems. DFI hopes to assist customers and industries in India in achieving their demands for digital transformation and intelligentization.

This flagship event is co-located with India’s largest tech and infra expo, the Convergence India Expo. Held at Pragati Maidan in New Delhi, India, from January 17th to January 19th, the expo brings together powerful business and technology leaders in the embedded technologies industry to share their knowledge and explore new solutions. DFI’s products will be displayed alongside Dynalog’s networking solutions at their joint exhibition booth. With over 40 years of legacy, Dynalog India Ltd, is a distinguished leader of automation
solutions recognized across India and is one of DFI’s most important distributors and partners.

DFI will present flagship products such as the ECX700-AL rugged embedded system, EP100-AL compact PC, PCSF51 SBC, and the latest SOM modules for applications in factory automation, transportation, and military industries in India. These products are already being implemented and have achieved positive results in India. For example, DFI has initiated production on an SOM module with wide temperature range for an aerospace and defense electronics company. The customer chose DFI after reviewing more than five
industrial PC competitors, because DFI could provide the most comprehensive support and customization services.

With India’s market potential and DFI’s cutting-edge technologies, DFI aspires to become the best partner in India’s industrial transformation. DFI supports government initiatives such as the “Make in India” initiative that promotes entrepreneurship and encourages companies to manufacture products made in India. From government to private sectors, DFI is committed toward contributing its services and enabling companies to realize their goals. DFI will continue to seize opportunities in India by delivering its industrial-grade
embedded solutions for industrial automation, military defense, smart transportation, smart city, and other sectors while enhancing its presence through participation in local events.

– Exhibition Dates: 17th -19th January 2024
– Venue: Pragati Maidan, New Delhi, India
– Booth No.: B158

The post DFI To Present Latest Innovations Alongside Partner Dynalog at Embedded Tech India Expo 2024 appeared first on ELE Times.

Put together my first electronic project. Savaged the fan from an old printer and decided to make something useful. Because the fan is 24V i had to use a step up converter that also tells me the battery voltage. submitted by /u/VerySlowLorris [link] [comments]

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Independent power electronics company Quantum Power Transformation (QPT) of Cambridge, UK — which was founded in 2019 and specializes in developing next-generation gallium nitride (GaN)-based motor drives — has appointed Rupert Baines as its CEO, effective from 1 April. He is a veteran of the semiconductor industry with C-level roles including CEO of UltraSoC (sold to Siemens) and chief marketing officer of Codasip...

Lynred of Grenoble, France, which designs and manufactures infrared (IR) detectors for aerospace, defense and commercial applications, has appointed Hervé Bouaziz as executive president and Xavier Caillouet as CEO...