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Advanced Energy unveils dual-output 400W module for NeoPower configurable power supplies

Semiconductor today - Птн, 12/12/2025 - 10:43
Advanced Energy Inc of Denver, CO, USA (which designs and manufactures precision power conversion, measurement and control solutions) has introduced a new dual-output 24V/24V module for its NeoPower family of configurable power supplies, delivering up to 400W (200W per output) in a compact 2.5-inch form factor...

Navitas expands global distribution network with Avnet

Semiconductor today - Птн, 12/12/2025 - 10:13
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced an expansion of its distribution agreement with Avnet, making Avnet a globally franchised strategic distribution partner...

Nissan Powering EV Component Plant with Repurposed Batteries

ELE Times - Птн, 12/12/2025 - 10:06

Nissan Australia has launched the Nissan Node project, a circular economy initiative which will repurpose end-of-life Nissan Leaf batteries to power a section of its Dandenong production facility.

This initiative is part of Nissan’s sustainability strategy. The project involves the installation of a new solar array along with a battery-energy storage system, made from repurposed first-generation Leaf batteries at the Nissan Casting Australia Plant (NCAP).

EV manufacturing is said to have a 50-100% higher production emission as compared to ICE vehicles due to battery manufacturing.

Nissan expects its new system to cut NCAP’s annual CO2 emissions by nearly 259 tonnes while saving approximately 128 megawatt-hours of energy annually.

“This isn’t just a hugely exciting project, but an important step into the future for end-of-life EV batteries,” Nissan Oceania managing director Andrew Humberstone says.

“As an early pioneer of the electric vehicle both globally and locally, we can also demonstrate leadership in second-life battery initiatives. I’m proud that this solution is every bit as innovative as the launch of not only the Leaf but the recently introduced ARIYA.”

The initiative was delivered in partnership with Melbourne-based technology firm Relectrify, which developed the battery-management and inverter technology enabling second-life Leaf batteries to be repurposed effectively. Its ReVolve energy-storage system installed at NCAP is the first commercial product built entirely from retired Leaf batteries.

The post Nissan Powering EV Component Plant with Repurposed Batteries appeared first on ELE Times.

KEC, Powernet & Wise Integration Co-Develop AI Server SMPS Power Solutions

ELE Times - Птн, 12/12/2025 - 08:48

Wise Integration (France), Powernet (Korea) and KEC (Korea) will co-develop next-generation switched-mode power supply (SMPS) solutions designed specifically for AI server applications in South Korea. The partnership aligns with the country’s push to expand AI infrastructure and build out the next generation of high-density data centers.

Under the agreement, Wise Integration will supply its GaN (gallium-nitride) power devices, digital-control expertise and technical support. Powernet Technologies Corporation will lead development of new SMPS designs using Wise’s WiseGan and WiseWare technologies. KEC Corporation  will manage backend manufacturing, including module integration and system-in-package production tailored to the thermal and reliability demands of AI-server racks.

In addition to accelerating the design and development of competitive AI-server power supply solutions and creating business opportunities in Korea’s AI server market, the project aims to shorten the solutions’ time-to-market using WiseGan and WiseWare technologies. The collaboration builds on an earlier partnership between Wise Integration and Powernet, launched to serve OEMs that require compact, digitally controlled power-supply systems for faster, smaller and more energy-efficient electronic equipment.

AI servers draw extensive power, generate intense heat, and depend on SMPS designs capable of converting high-voltage input (e.g., 400 V) to stable 48 V rails with minimal loss. GaN devices with digital control are uniquely suited for that task: they enable higher switching frequencies, greater efficiency, and more precise management of fast, high-current load transients.

Supporting South Korea’s National Ambition

The South Korean government’s investments in AI-dedicated data centers includes high-performance GPU clusters and digital infrastructure that supports demand for more efficient, compact, and scalable power-conversion systems.

“Korea is moving quickly to build the next generation of AI data centers, and power architecture is a critical piece of that effort. Working with Powernet and KEC lets us bring GaN-based digital control into server-grade designs at scale—delivering the efficiency, thermal performance, and responsiveness that modern AI hardware depends on,” said Ghislain Kaiser, CEO of Wise Integration.

Technology Momentum: A Logical Extension of Wise Integration’s Roadmap

Beyond the MoU, Wise Integration has been widening the foundation that supports strategic partnerships. As Korea accelerates AI-ready data-center development, the demands on power-conversion systems intensify—higher switching frequencies, tighter thermal budgets and more aggressive efficiency targets. Wise has been expanding its GaN + digital-control portfolio to meet those constraints, ensuring the technologies Korea aims to deploy at scale already have a maturing, production-validated base behind them.

For example, the company recently launched WiseWare 1.0 for totem-pole PFC and LLC topologies, its newest fully digital controller. While aimed today at gaming, displays and industrial systems, it shares the same architecture—high-frequency GaN operation, compact form factor, digitally managed efficiency—that naturally scales into the server-class designs targeted under the Korea-focused collaboration.

The post KEC, Powernet & Wise Integration Co-Develop AI Server SMPS Power Solutions appeared first on ELE Times.

FAMES Pilot Line R&D Advances: 400°C CMOS Enables 3D Integration Goals

ELE Times - Птн, 12/12/2025 - 08:21

CEA-Leti, the coordinator of the FAMES Pilot line, has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400°C. The devices match electrical performance of devices fabricated at standard thermal budget (>1000 °C), removing one of the last barriers to large-scale 3D sequential integration (3DSI) —a core objective of FAMES.

Enabled by advanced CEA-Leti expertise in low-temperature processes (nanosecond laser annealing (NLA) and solid-phase epitaxy regrowth (SPER))this work offers true three-dimensional device stacking from the lab to fab. 3D sequential-integration interconnection density between tiers is the highest among 3D technologies, such as TSV and hybrid bonding. In this project, CEA-Leti demonstrated that Si CMOS is BEOL compatible, and thus can be stacked safely above BEOL, while transistor performance and maturity overtake largely the other technological options from the state-of-the-art, low-temperature solutions.

The achievement, presented today in a paper at IEDM 2025, titled, “High Performance 2.5 V n&p 400 °C SOI MOSFETs: A Breakthrough for Versatile 3D Sequential Integration, is a key breakthrough for the FAMES Pilot Line, a European Union initiative launched in 2023 in response to the EU Chips Act strategy to strengthen sovereignty and competitiveness in semiconductor technologies. By combining 3D heterogeneous and sequential integration on FD-SOI platforms, the consortium aims to enable a new generation of More-Than-Moore devices and applications.

Enabling New Chip Architectures

“This breakthrough is a major milestone of the FAMES project as it enables innovative new chip architectures,” said Dominique Noguet, CEA-Leti vice president and coordinator of the FAMES Pilot Line. “Our low-temperature process could accelerate real-world demonstrations of multi-tier stacks combining advanced CMOS logic, with smart pixel or RF layers, to create new high-performance 3D chips.”

Concept of 3-tier µLED GaN pixel allowing an emissive array with strong pitch reduction thanks to 3DSI in combination with 3D hybrid bonding technology. CEA-Leti’s 400 °C CMOS process enables such top-tier integration without exceeding the thermal limits of the active circuitry below.

The team showed that SOI devices processed at 400 °C instead of the high temperature (>1000 °C) industry standard and high-temperature industrial reference, performed equivalent to high-temperature devices.

“The 400 °C process enables 3D sequential stacking on any bottom tier,” Noguet said. “It’s a huge step forward because it’s far more mature—reliable and scalable—than current low-temperature solutions, such as polycrystalline films, oxide semiconductors or carbon nanotubes.”

Protecting Circuitry on Bottom-Tier Layers

CEA-Leti’s team demonstrated n- and p-type transistors matching the characteristics of conventional high-temperature CMOS devices, while staying within the ≤400 °C thermal budget required to preserve active circuitry in lower layers.

The process relies on an optimized 400 °C LPCVD deposition for amorphous silicon followed by NLA in the melt regime for dopant activation and diffusion—producing polycrystalline, low-resistance gates with excellent interface quality. In additionNLA-SPER mastering enables dopant activation without diffusion leading to access resistance within specifications.

“Our strength lies in mastering the cold process—especially nanosecond laser annealing—to achieve high-mobility, high-reliability CMOS at low temperature,” said Daphnée Bosch, lead author of the paper. “This laser expertise makes our approach unique.”

The post FAMES Pilot Line R&D Advances: 400°C CMOS Enables 3D Integration Goals appeared first on ELE Times.

Keysight & KT SAT Nail Industry First GEO-to-LEO Multi-Orbit NTN Handover!

ELE Times - Птн, 12/12/2025 - 07:54

Keysight Technologies, Inc., in collaboration with KT SAT, has demonstrated a successful non-terrestrial network (NTN) handover using the KOREASAT-6A satellite at KT SAT’s Kumsan Satellite Network Operation Center in Korea. In a controlled clinical environment, the companies established the industry’s first NR-NTN multi-orbit handover between a commercial GEO satellite and an emulated LEO link. The demonstration was performed over a live Ku‑band GEO connection (DL ~12.3 GHz / UL ~14.4 GHz), marking a major milestone toward testing the newly standardized 3GPP Rel‑19 Ku‑band NTN spectrum. By incorporating Ku‑band operation into this multi-orbit mobility scenario, Keysight and KT SAT have validated NTN behaviors in a frequency range now central to emerging global standards and operator deployment strategies.

As the industry moves toward 6G, integrating satellite and terrestrial networks is essential to deliver continuous coverage and resilient service in remote or disaster-affected areas. Satellite links, however, introduce longer delays, Doppler effects, and dynamic link conditions that complicate mobility and handover across space and ground domains.

By moving beyond earlier demonstrations focused on single-orbit GEO connectivity, KT SAT and Keysight have shown how operators can evolve from point-to-point satellite links to continuous multi-orbit mobility, expanding KT SAT’s service capabilities toward resilient, always-on coverage across space and ground domains. This achievement also establishes an important technical milestone for KT SAT and Keysight in advancing Ku-band NTN mobility.

Using Keysight’s Network Emulator Solutions and UeSIM RAN Testing Toolset, the teams emulated the base station and user equipment, established a two-way link through KOREASAT-6A, and maintained service continuity during a handover from GEO to an emulated LEO connection. Operating the GEO link in Ku‑band ensures that these mobility insights directly map to the Rel‑19 NTN frequency bands now entering commercial planning, giving operators and device vendors earlier visibility into real‑world propagation, timing, and interoperability behaviors. As a result, KT SAT can now explore and validate advanced NTN mobility scenarios in the lab, before satellites or user devices are widely deployed, accelerating its roadmap and reducing the time and cost of bringing new multi-orbit services to market.

This collaboration shows how operators can extend coverage and resilience, while device and chipset vendors gain a lab-based path to validate NTN mobility without relying solely on expensive field trials. Insights from this work are intended to inform standards discussions and operator evaluations, helping the ecosystem shorten time-to-trial and de-risk commercialization.

Seo Young-soo, CEO of KT SAT, said: “As the only satellite communications service provider in Korea, KT SAT is progressively validating the applicability of NTN gNB and UE using our five operational GEO satellites. Building on the results of this trial, we will actively explore strengthening the competitiveness of our next-generation GEO satellite for the global market and delivering integrated multi-orbit communication services based on NTN systems, including traffic handover across our own GEO and future LEO/MEO constellations.”

Peng Cao, Vice President and General Manager of Keysight’s Wireless Test Group, Keysight, said: “This demonstration shows how emulation can bring future multi-orbit networks into the lab today. By combining a live GEO connection with emulated LEO conditions using NR-NTN parameters in Ku-band, Keysight gives operators and vendors a practical way to study NTN handover behavior, optimize mobility strategies, and reduce the cost and risk of early deployments.”

The post Keysight & KT SAT Nail Industry First GEO-to-LEO Multi-Orbit NTN Handover! appeared first on ELE Times.

This A very powerful Amplifier module runs at 12v Dc

Reddit:Electronics - Птн, 12/12/2025 - 06:14
This A very powerful Amplifier module runs at 12v Dc

It can deliver upto 12.5 watts (across both the channels) when it is powered with 16v Dc.Means it can run two speaker on 6.25watts (6.25 × 2).


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