Новини світу мікро- та наноелектроніки

I disassembled this "recalibrateable" Caliper and I was wondering why the LCD came off like this with no clear way for the signals to travel to it, I can only assume this is a very interesting way for them to recalibrate it without having to add more pins/pads. submitted by /u/holllow_world [link] [comments]

submitted by /u/liamkinne [link] [comments]

Soldering cobot I've made few months ago. It's based on UR5-e cobot with a JBC soldering tip. All is automated. submitted by /u/Open_Translator_7237 [link] [comments]

submitted by /u/Mindless-Topic-5108 [link] [comments]

Navitas Semiconductor Corp of Torrance, CA, USA says that both its GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductor technologies have been adopted into Dell’s family of notebook adapters, from 60W to 360W...

MACOM Technology Solutions Inc of Lowell, MA, USA (which designs and makes RF, microwave, analog and mixed-signal and optical semiconductor technologies) says that its France-based European Semiconductor Center (MESC) has been awarded a multi-year contract from French Government agency Banque Publique d’Investissement (BPI) to lead the development and manufacturing of advanced semiconductor products, in collaboration with public and private sector partners...

Teledyne HiRel Semiconductors of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) has announced the availability of its latest rad-tolerant wideband 50GHz RF switch...

I cool find on some decommissioned equipment. submitted by /u/Miserable-Mode-1261 [link] [comments]

We had a requirement to measure the RMS value of a unipolar square wave being fed to a resistive load. Our resistive loads were light bulb filaments (Numitrons) so the degree of brightness was dependent on the applied RMS.

Our digital multimeters did not have an RMS measurement capability, but they could measure the average value of the waveform at hand.

Conversion of a measured average value to the RMS value was accomplished by taking the average value and dividing that by the square root of the waveform’s duty cycle.

The applicable equations are shown in Figure 1.

Figure 1 Equations used to convert a measured average value to RMS value by taking the average value and dividing that by the square root of the waveform’s duty cycle.

John Dunn is an electronics consultant, and a graduate of The Polytechnic Institute of Brooklyn (BSEE) and of New York University (MSEE).

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The post Converting from average to RMS values appeared first on EDN.

Toggle, slide, push-pull, push-push, tactile, rotary, etc. The list of available switch styles goes on and on (and off?). Naturally, as mechanical complexity goes up, so (generally) does price. Hence simpler generally translates to cheaper. Figure 1 goes for economy by adding a D-type flip-flop and a few discretes to a minimal SPST momentary pushbutton to implement a classic push-on, push-off switch.

Figure 1 F1a regeneratively debounces S1 so F1b can flip ON and flop OFF reliably.

Wow the engineering world with your unique design: Design Ideas Submission Guide

An (almost) universal truth about mechanical switches, unless they’re the (rare) mercury-wetted type, is contact bounce. When actuated, instead of just one circuit closure, you can expect several, usually separated by a millisecond or two. This is the reason for the RC network and other curious connections surrounding the F1a flip/flop.

When S1 is pushed and the circuit closed, a 10 ms charging cycle of C1 begins and continues until the 0/1 switching threshold of pin 4 is reached. When that happens, poor F1a is simultaneously set to 1 and reset to 0. This contradictory combination is a situation no “bistable” logic element should ever (theoretically) have to tolerate. So, does it self-destruct like standard sci-fi plots always paradoxically predict? 

Actually, the 4013-datasheet truth table tells us that nothing so dramatic (and unproductive) is to be expected. According to that, when connected this way, F1a simply acts as a non-inverting buffer with pin 2 following the state of pin 4, snapping high when pin 4 rises above its threshold, and popping low when it descends below. Positive feedback through C1 sharpens the transition while ensuring that F1a will ignore the inevitable S1 bounce. Meanwhile the resulting clean transition delivered to F1b’s pin 11 clock pin causes it to reliably toggle, flipping ON if it was OFF and flopping OFF if it was ON where it remains until S1 is next released and then pushed again.

Thus, the promised push-ON/push-OFF functionality is delivered!

The impedance of F1b’s pin 13 is supply-voltage dependent, ranging from 500 Ω at 5 V to 200 Ω at 15 V. If the current demand of the connected load is low enough, then power can be taken directly from F1b pin 13 and the Q1 MOSFET is unnecessary. Otherwise, it is, and a suitably capable transistor should be chosen. For example, the DMP3099L shown has an Ron less than 0.1 Ω and can pass 3 A.

But what about that “no switch at all” thing?

The 4013 input current is typically only 10 pA. Therefore, as illustrated in Figure 2, a simple DC touchplate comprising a small circuit board meander can provide adequate drive and allow S1 to be dispensed with altogether. It’s hard to get much cheaper than that.

Figure 2 An increase in RC network resistances allows substitution for S1 with a simple touchplate.

 Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

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The post Flip ON flop OFF appeared first on EDN.

Design engineers aiming to protect the input and output of op amps have several options. They can use an electrostatic discharge (ESD) diode or input current-limiting resistor alongside a transient voltage suppressor (TVS) diode. However, both design approaches have limitations. Here is why an op amp with integrated JFET input protection has better design merits.

Read the full article at EDN’s sister publication, Planet Analog.

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The post Build ESD protection using JFETs in op amps appeared first on EDN.

submitted by /u/Exploring-new [link] [comments]

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA says that the Science Based Targets initiative (SBTi) has approved its near-term science-based emissions reduction targets. Validation of these targets attests that the planned decrease of onsemi’s greenhouse gas (GHG) emissions is aligned to the ambition of limiting global temperature rise to 1.5°C...

APC Electronics (APC-E) of Bend, OR, USA — which researches, develops and manufactures wide-bandgap power semiconductor products — has announced Luminus Devices Inc of Sunnyvale, CA, USA — which designs and makes LEDs and solid-state technology (SST) light sources for illumination markets — as its exclusive worldwide sales channel and go-to-market partner...

Peltz oscillator with injection locking

Oscillator injection locking is an interesting subject; however, it seems to be a forgotten circuit concept that can be beneficial in some applications.

Wow the engineering world with your unique design: Design Ideas Submission Guide

This design idea shows an application of the built-in Bode capability within many modern low-cost DSOs such as the Siglent SDS814X HD using the Peltz oscillator as a candidate for investigating injection locking [1], [2], [3].

Figure 1 illustrates the instrument setup and device under test (DUT) oscillator schematic with Q1 and Q2 as 2N3904s, L ~ 470 µH, C ~ 10 nF, Rb = 10K, Ri = 100K and Vbias = -1 VDC. This arrangement and component values produce a free running oscillator frequency of ~75.5 kHz

Figure 1 Mike Wyatt’s notes on producing a Peltz oscillator and injector locking setup where the arrangement and component values produce a free running oscillator frequency of ~75.5 kHz.

Analysis and measurements

As shown in Figure 2, the analysis from Razavi [2] shows the injection locking range (± Δfo) around the free running oscillator frequency fo. Note the locking range is proportional to the injected current Ii. The component values shown reflect actual measurements from an LCR meter.

Figure 2 Mike Wyatt’s notes on the injection-locked Peltz oscillator showing the injection locking range around the free running oscillator frequency fo.

This analysis predicts a total injecting locking range of 2*Δfo, or 2.7 kHz, which agrees well with the measured response as shown in Figure 3.

Figure 3 The measured response of the circuit shown in Figure 1 showing an injection locking range of roughly 2.7 kHz.

Increasing the injection signal increases the locking range to 3.7 kHz as predicted, and measurement shows 3.6 kHz as shown in the second plot in Figure 4.

Figure 4 The measured response of the circuit shown in Figure 1 where increasing the injection signal increases the locking range to 3.7 kHz.

Note the measured results show a phase reversal as compared to the illustration notes (Figure 2) and the Razavi [2] article. This was due to the author not defining the initial phase setup (180o reversed) in agreement with the article and completing the measurements before realizing such!!

Injection locking use case

Injection locking is an interesting subject with some uses even in today’s modern circuitry. For example, I recall an inexpensive arbitrary waveform generator (AWG) which had a relatively large frequency error due to the cheap internal crystal oscillator utilized and wanted the ability to use a 10 MHz GPS-disciplined signal source to improve the AWG waveform frequency accuracy. Instead of having to reconfigure the internal oscillator and butcher up the PCB, a simple series RC from a repurposed rear AWG BNC connector to the right circuit location solved the problem without a single cut to the PCB! The AWG would operate normally with the internal crystal oscillator reference unless an external reference signal was applied, then the oscillator would injection lock to the external reference. This was automatic without need for a switch or setting a firmware parameter, simple “old school” technique solving a present-day problem!

 Michael A Wyatt is a life member with IEEE and has continued to enjoy electronics ever since his childhood. Mike has a long career spanning Honeywell, Northrop Grumman, Insyte/ITT/Exelis/Harris, ViaSat and retiring (semi) with Wyatt Labs. During his career he accumulated 32 US Patents and in the past published a few EDN Articles including Best Idea of the Year in 1989.

References

1. “EEVblog Electronics Community Forum.” Injection Locked Peltz Oscillator with Bode Analysis, www.eevblog.com/forum/projects/injection-locked-peltz-oscillator-with-bode-analysis. 
2. B. Razavi, “A study of injection locking and pulling in oscillators,” in IEEE Journal of Solid-State Circuits, vol. 39, no. 9, pp. 1415-1424, Sept. 2004, doi: 10.1109/JSSC.2004.831608. 
3. Wyatt, Mike. “Simple 5-Component Oscillator Works below 0.8V.” EDN, 3 Feb. 2025, www.edn.com/simple-5-component-oscillator-works-below-0-8v/.

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The post Investigating injection locking with DSO Bode function appeared first on EDN.

AlixLabs AB of Lund, Sweden — which was spun off from Lund University in 2019 and has developed the Atomic Layer Etching (ALE) Pitch Splitting technology (APS) — has entered into a research collaboration with Linköping University on gallium nitride (GaN) and indium nitride (InN) deposition and etch, strengthening not only their own respective expertise in RF and power electronics but also aligning with the Swedish semiconductor sector...

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