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For its fiscal second-quarter 2025 (ended 28 September 2024), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has reported revenue of $1046.5m. This is down 5.2% on $1103.5m a year ago due mainly to a hiatus in Android smartphone revenues, following ramps in first-half calendar 2024 for key models including both Samsung’s S24 (involving over $5 of content) and Google’s Pixel ($15 of content). However, revenue has rebounded by 18% from $886.7m last quarter. It also exceeds the $1025m guidance, driven by double-digit sequential growth in all three operating segments...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that the US International Trade Commission (ITC) has affirmed its initial determination that gallium nitride-on-silicon (GaN-on-Si) power solutions firm Innoscience of Suzhou, China infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots and autonomous driving, among others...

During the inaugural ministerial event of the World Fusion Energy Group at the Ministry of Foreign Affairs and International Cooperation in Rome, a memorandum of understanding (MoU) agreement was signed between Ricerca sul Sistema Energetico (RSE S.p.A., a company indirectly controlled by Italy’s Ministry of Economy and Finance through its sole shareholder GSE S.p.A.), and Blue Laser Fusion Inc (BLF) of Santa Barbara, CA, USA (founded in 2022 by CEO professor Shuji Nakamura, winner of the Nobel Prize in Physics in 2014 and member of the RSE Scientific Committee) to initiate joint R&D on what is claimed would be the world’s first commercial-scale inertial fusion energy (IFE) power plant...

Smart home devices are becoming increasingly popular with many households adopting smart thermostats, lighting systems, security systems, and home entertainment systems. These devices provide automation and wireless control of household functions, allowing users to monitor and control their homes from a mobile app or digital interface.

But despite the advantages of smart home devices, users also face an increased risk of electrical malfunctions that may result in electric shock, fire, or direct damage to the device. This article discusses the importance of integrating digital isolators in smart home devices to ensure safety and reliability.

Definition of a digital isolator

A digital isolator is an electronic device that provides electrical isolation between two circuits while allowing digital signals to pass between the circuits. By using electromagnetic or capacitive coupling, the digital isolator transmits data across the isolation barrier without requiring a direct electrical connection.

Digital isolators are often used in applications where electrical isolation is necessary to protect sensitive circuitry from high voltages, noise, or other hazards. They can be used in power supplies, motor control, medical devices, industrial automation, and other applications where safety and reliability are critical. Figure 1 shows a capacitive isolation diagram.

Figure 1 The capacitive isolation diagram includes the top electrode, bottom electrode, and wire bonds. Source: Monolithic Power Systems

Understanding isolation rating

The required isolation voltage is an important consideration when choosing a digital isolator, since it impacts the total solution cost. Isolators generally have one of two isolation classifications: basic isolation or reinforced isolation.

• Basic isolation: This provides sufficient insulation material to protect a person or device from electrical harm; however, the risk of electrical malfunctions is still present if the isolation barrier is broken. Some devices use two layers of basic isolation as a protective measure in the case of the first layer breaking; this is called double isolation.
• Reinforced isolation: This is equivalent to dual basic isolation and is implemented by strengthening the isolation barrier to decrease the chances of the barrier breaking compared to basic isolation.

Figure 2 shows the three types of isolation: basic isolation, double isolation, and reinforced isolation.

Figure 2 The three types of isolation are basic isolation, double isolation, and reinforced isolation. Source: Monolithic Power Systems

Here, creepage distance is the shortest distance between two conductive elements on opposite sides of the isolation barrier and is measured along the isolation surface. Clearance distance is a common parameter that is similar to creepage distance but is measured along a direct path through the air.

As a result, creepage distance is always equal to or greater than the clearance distance, but both are heavily dependent on the IC’s package structure. Parameters such as pin-to-pin distance and body width have a strong correlation with the isolation voltage for isolated components. Wider pin-to-pin spacing and packages have larger isolation voltages, but they also take up more board space and increase the overall system cost.

Depending on the system design and isolation voltage requirements, different isolation ratings are available, typically corresponding to the package type. Small outline integrated circuit (SOIC) packages often have 1.27-mm pin-to-pin spacing and are available in narrow body (3.9-mm package width) or wide body (7.5-mm package width) formats.

The wide-body package is commonly used for meeting reinforced 5-kVRMS requirements, while the narrow-body package is used in applications where the maximum withstand isolation voltage is 3k VRMS. In some cases, extra wide-body packages are used with >14.5-mm creepage for certain 800-V+ systems to meet the creepage and clearance requirements.

Figure 3 shows the clearance and creepage distances in an SOIC package.

Figure 3 Varying clearance and creepage distances are used in SOIC packages to meet design requirements. Source: Monolithic Power Systems

Safety regulations for digital isolators

Safety certifications such as UL 1577, VDE, CSA, and CQC play a pivotal role in ensuring the reliability and safety of digital isolators within various electronic systems. These certifications are described below:

• UL 1577: This certification, established by Underwriters Laboratories, sets stringent standards to evaluate the insulation and isolation performance of digital isolators. Factors including voltage isolation, leakage current, and insulation resistance are examined to ensure compliance with safety requirements.
• VDE: This certification is predominantly recognized in Europe and verifies the quality and safety of electrical products, including digital isolators, through rigorous testing methodologies. VDE certification indicates that the isolators meet the specified safety criteria and conform to European safety standards, ensuring their reliability and functionality in diverse applications.
• Canadian Standards Association (CSA): This certification guarantees that digital isolators adhere to Canadian safety regulations and standards, ensuring their reliability and safety in electronic systems deployed across Canada.
• China Quality Certification (CQC): The China Quality Certification GB 4943.1-2022 emphasizes conformity assessment and quality control in audio/video, information, and communication technology equipment.

These certifications collectively provide manufacturers, engineers, and consumers with the confidence that digital isolators have undergone comprehensive testing and comply with stringent safety measures, contributing to the overall safety and reliability of the electronic devices and systems in which they are utilized across global markets.

Features of digital isolators vs. optocouplers

Traditionally, the isolated transfer of digital signals has been carried out using optocouplers. These devices harness light to transfer signals through the isolation barrier, using an LED and a photosensitive device, typically a phototransistor. The signal on one side of the isolation barrier turns the LED on and off.

When the photons emitted by the LED impact the phototransistor’s base-collector junction, a current is formed in the base and becomes amplified by the transistor’s current gain, transmitting the same digital signal on the opposite side of the isolation barrier.

Digital isolators provide four key features that make them better than optocouplers in smart home devices:

• Low-power consumption: Digital isolators don’t need to supply a light source, and instead use more efficient channels to transfer the signal. This makes digital isolators ideal for battery-powered devices such as smart thermostats and security sensors.
• High-speed data transmission: Phototransistors have long response times, which limits the bandwidth of optical isolators. On the other hand, digital isolators can transfer signals much quicker, enabling fast and reliable communication between smart home devices and control systems.
• Low electromagnetic interference (EMI): EMI can interfere with electronic devices in the home. By adopting capacitive isolation technology, digital isolators are more immune to EMI.
• Wide operating temperature range: This makes digital isolators suitable for a variety of robust environments, including outdoor applications.

Types of digital isolation

There are two types of digital isolation that can be implemented: magnetic isolation and capacitive isolation. Magnetic isolation relies on a transformer to transmit signals, while capacitive isolation uses a capacitor to transmit signals across the isolator, which creates an electrical barrier. This barrier prevents direct current flow and provides isolation between the input and output circuits.

Capacitive isolation is the most commonly used method due to several advantages.

• Higher data rates: Compared to magnetic isolation, the higher data rates of capacitive isolation can be used for applications that require fast and reliable communication.
• Lower power consumption: Compared to magnetic isolation or optical isolation, capacitive isolation typically consumes less power, making it a more energy-efficient choice for battery-powered devices.
• Smaller size: Capacitive isolators are typically smaller than magnetic isolators or optical isolators, which eases their integration into small electronic devices.
• Lower cost: Capacitive isolators are typically less expensive than optical isolators, which rely on expensive optoelectronic components like LEDs and photodiodes.
• Higher immunity to EMI: Compared to magnetic isolation, capacitive isolation is less susceptible to EMI, resulting in capacitive isolation being a more reliable choice in noisy environments.

Figure 4 shows a comparison of traditional optical isolation compared to magnetic and capacitive isolation.

Figure 4 Capacitive isolation offers key advantages over optical isolation and magnetic isolation. Source: Monolithic Power Systems

The type of digital isolation used depends on the application specifications, such as the required data rate, temperature range, or the level of electrical noise in the environment. Figure 5 shows a block diagram of a smart refrigerator, which requires three digital isolators.

Figure 5 The block diagram of a smart refrigerator that requires three digital isolators. Source: Monolithic Power Systems

Applications of digital isolators in smart home devices

Providing electrical isolation between the control system and appliance circuitry is crucial to ensure user safety as well as to protect smart home devices from outside interference or hacking. Some examples of smart home devices that integrate digital isolators include smart lighting systems, smart security systems, smart thermostats and smart home entertainment systems, which are described in further detail below.

Smart lighting systems

In smart lighting systems, digital isolators provide isolation between the control system and the high-voltage lighting circuitry. This prevents the user from coming into contact with high-voltage electrical signals.

Smart security systems

In smart home security systems, digital isolators provide isolation between the control system and the sensors or cameras. Isolating the sensitive control circuitry from the outside world addresses concerns regarding outside interference to the security system.

Smart thermostats

In smart thermostats, digital isolators provide isolation between the control system and the heating or cooling circuits. This minimizes damage to the control system from high-voltage or high-current signals in the heating or cooling circuits.

Smart home entertainment systems

In smart home entertainment systems like smart speakers, digital isolators provide isolation between the control system and the audio or video circuits. This achieves high-quality playback by preventing interference or noise in the audio or video signals.

George Chen is product marketing manager at Monolithic Power Systems (MPS).

Tomas Hudson is applications engineer at Monolithic Power Systems (MPS).

Related Content

• Think Your Home Is Smart? Think Again
• How to design with capacitive digital isolators
• Shocking protection with reinforced digital isolators
• Smart home: 4 things you should know about Matter
• Digital Isolation: What Every Automotive Designer Needs to Know

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I started tinkering with transistors because it’s what I am mostly learning this semester. First I tried to control output using the PWM pin from my RPi. After that I got the idea of building an RC car and doing the input to the motor from scratch. My first working test is an H-bridge using 4 npn and 2 pnp transistors with modulation through the Q2 and Q4 npn. Right now I can generate a rectangular wave. The 2 LEDs are in opposite directions, so a positive voltage turns one and a negative the other. The This week I want to bring it to uni and test the sinusoidal generation and efficiency with the oscilloscope. submitted by /u/InfernityZarroc [link] [comments]

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ST’s web-based tool, AIoT Craft, simplifies the development and provisioning of node-to-cloud AIoT projects that use the machine-learning core (MLC) of ST’s smart MEMS sensors. Intended for both beginners and seasoned developers, AIoT Caft helps program these sensors to run inference operations.

The MLC enables decision-tree learning models to run directly in the sensor. Operating autonomously without host system involvement, the MLC handles tasks that require AI skills, such as classification and pattern detection.

To ease the creation of decision-tree models, AIoT Craft includes AutoML, which automatically selects optimal attributes, filters, and window size for sensor datasets. This framework also trains the decision tree to run on the MLC and generates the configuration file to deploy the trained model. To provision the IoT project, the gateway can be programmed with the Data Sufficiency Module, intelligently filtering data points for transmission to the cloud.

As part of the ST Edge AI Suite, AIoT Craft offers customizable example code for in-sensor AI and sensor-to-cloud solutions. Decision tree algorithms can be tested on a ready-to-use evaluation board connected to the gateway and cloud.

AIoT Craft product page

STMicroelectronics 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Renesas has added new devices to its RA8 series of MCUs, combining the same Arm Cortex-M85 core with a streamlined feature set to reduce costs. The RA8E1 and RA8E2 MCU groups are well suited for high-volume applications, including industrial and home automation, mid-end graphics, and consumer products. Both groups employ Arm’s Helium vector extension to boost ML and AI workloads, as well as Trust Zone for enhanced security.

The RA8E1 group’s Cortex-M85 core runs at 360 MHz. These microcontrollers provide 1 Mbyte of flash, 544 kbytes of SRAM, and 1 kbyte of standby SRAM. Peripherals include Ethernet, octal SPI, I2C, USB FS, CAN FD, 12-bit ADC, and 12-bit DAC. RA8E1 MCUs come in 100-pin and 144-pin LQFPs.

MCUs in the RA8E2 group boost clock speed to 480 MHz and increase SRAM to 672 kbytes. They also add a 16-bit external memory interface. RA8E2 MCUs are offered in BGA-224 packages.

The RA8E1 and RA8E2 MCUs are available now. Samples can be ordered on the Renesas website or through its distributor network.

RA8E1 product page

RA8E2 product page

Renesas Electronics 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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With a breakdown voltage of 1700 V, Power Integrations’ IMX2353F GaN switcher easily supports a nominal input voltage of 1000 VDC in a flyback configuration. It also achieves over 90% efficiency, while supplying up to 70 W from three independently regulated outputs.

The IMX2353F, part of the InnoMux-2 family of power supply ICs, is fabricated using the company’s PowiGaN technology. Its high voltage rating makes it possible for GaN devices to replace costly SiC transistors in applications like automotive chargers, solar inverters, three-phase meters, and other industrial power systems.

Like other InnoMux-2 devices, the IMX2353F provides both primary and secondary-side controllers, zero voltage switching without an active clamp, and FluxLink, a safety-rated feedback mechanism. Each of the switcher IC’s three regulated outputs is accurate to within 1%. By independently regulating and protecting each output, the IMX2353F eliminates multiple downstream conversion stages. The device has a switching frequency of 100 kHz and operates over a temperature range of -40°C to +150°C.

Prices for the IMX2353F start at $4.90 each in lots of 10,000 units. Samples and evaluation boards are available from Power Integrations and its authorized distributors.

IMX2353F product page

Power Integrations 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Navitas has developed a power supply unit (PSU) that is capable of producing 8.5 kW of output power with 98% efficiency. Aimed at AI and hyperscale data centers, the PSU achieves a power density of 84.6 W/in.3 through the use of both GaN and SiC MOSFETs.

The PSU provides a 54-V output and complies with Open Compute Project (OCP) and Open Rack v3 (ORV3) specifications. It employs the company’s 650-V GaNSafe and 650-V Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies.

According to Navitas, the shift to a 3-phase topology for both PFC and LLC enables the industry’s lowest ripple current and EMI. The power supply also reduces the number of GaN and SiC devices by 25% compared to the nearest competing system, reducing overall cost.

Specifications for the PSU include an input voltage range of 180 V to 264 V, a standby output voltage of 12 V, and an operating temperature range of -5°C to +45°C. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.

Navitas will debut the 8.5-kW power supply design at electronica 2024.

Navitas Semiconductor 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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The OV0TA1B CMOS image sensor from Omnivision fits 3-mm-high modules, ultrathin-bezel notebooks, webcams, and IoT devices. This low-power sensor is well-suited for AI-based human presence detection, facial authentication, and always-on devices. Additionally, it comes in monochrome and infrared versions to complement designs that include a separate RGB camera.

Featuring 2-µm pixels based on the company’s PureCel technology, the OV0TA1B sensor offers high sensitivity and modulation transfer function (MTF) for reliable detection and authentication. It delivers 30 frames/s at a resolution of 440×360 pixels in a compact 1/15.8-in. optical format.

In addition to the higher resolution, the sensor can also operate at a lower resolution of 220×180 pixels, consuming just 2.58 mW at 3 frames/s. The lower resolution and frame rate reduce power consumption, allowing it to meet the needs of energy-sensitive applications.

The OV0TA1B provides programmable controls for frame rate, mirroring, flipping, cropping, and windowing. It supports 10-bit RAW output in normal mode and 8-bit RAW output in always-on mode, along with static defect pixel correction and automatic black level calibration. 

Samples of the OV0TA1B image sensor are available now, with mass production to begin in Q1 2025.

OV0TA1B product page 

Omnivision

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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This is about a festive event accessory for lots of happy people with good cheer all around and in my opinion, a public safety hazard.

We were at a gala party one day where there were several hundred people. There were all kinds of food, there was music and there was this rotating orb in the center of the room which emitted decorative beams of light in constantly changing directions (Figure 1).

Figure 1 Party light at several different moments that emitted beams in several different directions.

Those beams of light were generated by moving lasers. They produced tightly confined light in whatever direction they were being aimed, just like the laser pointers you’ve undoubtedly seen being used in lecture settings.

I was not at ease with that (Figure 2).

Figure 2 A google search of the potential dangers of a laser pointer.

I kept wondering if when the decorative light beams would shine directly into someone’s eye, would that someone be in danger of visual injury? Might the same question be raised with respect to laser-based price checking kiosks in the stores (Macy’s or King Kullen for example) or for cashiers at their price scanning check out stations?

Everyone at the party went home happy.

John Dunn is an electronics consultant, and a graduate of The Polytechnic Institute of Brooklyn (BSEE) and of New York University (MSEE).

 Related Content

• Double the protection of a laser driver using a 1V power supply
• Debugging with a LASER
• Finger navigation in HID
• Laser diodes add intensity to narrow-beam lighting

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Taking place from December 10–13, MASTERs offers over 50 technical sessions for embedded control engineers

Microchip Technology has announced that registration is now open for its signature MASTERs Conference, the premier technical training event for embedded control engineers. The 17th Annual India MASTERs Conference returns to an in-person format and will take place at the Sheraton Grand Bangalore Hotel at Brigade Gateway from December 10–13, 2024.

Commonplace in the semiconductor industry is the use of acronyms and “MASTERs” is no exception. It stands for Microchip Annual Strategic Technical Exchange and Review. The conference strives to deliver advanced technical learning sessions that are taught by application and design engineers to foster a synergistic engineer-to-engineer experience.

The sessions at MASTERs are curated for engineers at all levels of experience and specialties and cover an array of embedded control topics including analog, functional safety, IoT, clock and timing, FPGA solutions and much more. The conference will feature 51 technical sessions of which 22 are hands-on workshops as well as technology showcase sessions for attendees to explore Microchip’s development tools. A highlight of this year’s MASTERs Conference is the networking dinner on December 11, which will feature a keynote by Joe Krawczyk, Microchip’s senior corporate vice president of global sales.

“We are delighted for the long-awaited return of MASTERs and look forward to reconnecting with existing clients and meeting new attendees,” said Edward Han, Microchip’s vice president of Asia Pacific sales. “This year marks the 17th annual India conference and we are proud of the legacy we have built over the years. Microchip strives to inspire and shape the engineers of tomorrow and we hope attendees will leave the conference with a rich and rewarding learning experience.”

Throughout the MASTERs Conference, networking sessions will be available with Microchip engineers at the Ask the Experts booths. These networking sessions provide attendees with the opportunity to meet with Microchip experts to learn about available tools and are given mini lessons on how to use them to fast-track the development of their applications.

MASTERs Registration and Pricing Information

Registration pricing is all inclusive at Rs. 12,000 and includes entry to the conference courses, meals and access to all class materials. Deadline to register is November 26, 2024.

For more information and to register, visit the conference web page.

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Contributes to higher efficiency in automotive electric compressors and inverters for industrial equipment

ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading* low loss characteristics with high short-circuit resistance. This makes the devices ideal for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models – RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR – in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants – SG84xxWN – with plans to further expand the lineup in the future.

The increasing use of higher voltages in automotive systems and industrial equipment has led to a growing demand for power devices capable of handling high voltages in applications such as vehicle electric compressors, HV heaters, and inverters for industrial equipment. At the same time, there is a strong push for high efficiency power devices to improve energy conservation, simplified cooling mechanisms, and smaller form factors for a decarbonized society. Automotive electrical components must also comply with automotive reliability standards, while power devices for inverter and heater circuits are required to provide current interruption capabilities during short circuits, necessitating high short-circuit tolerance.

In response, ROHM redesigned the device structure and adopted an appropriate package to develop new 4th Generation IGBTs suitable for high voltage by delivering industry-low loss characteristics with superior short-circuit tolerance. These devices achieve an industry-leading* short-circuit withstand time of 10µs (Tj=25°C) together with low switching and conduction losses while maintaining a high withstand voltage of 1200V and meeting automotive standards by reviewing the device structure, including the peripheral design. At the same time, the new TO-247-4L package products, which feature 4 terminals, can accommodate an effective voltage of 1100V in a ‘Pollution Degree 2 environment’ by ensuring adequate creepage distance between pins. This enables support for higher voltage applications than conventional products.

Implementing creepage distance measures on the device side alleviates the design burden for manufacturers. On top, the TO-247-4L package achieves high-speed switching by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products – contributing to higher efficiency in drive applications.

ROHM will continue to expand its lineup of high-performance IGBTs that contribute to greater miniaturization and high efficiency drive in automotive and industrial equipment applications.

Terminology

AEC-Q101 Automotive Reliability Standard

AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. AEC-Q101 is a standard that specifically applies to discrete semiconductor products (i.e. transistors, diodes).

Short-Circuit Tolerance

The time that a power device can withstand a short-circuit without being destroyed.

IGBT (Insulated Gate Bipolar Transistor)

A power transistor that combines the high-speed switching characteristics of a MOSFET with the low conduction loss of a bipolar transistor.

Creepage Distance

The shortest distance along the surface of an insulator between two conductors. In semiconductor design, insulation measures with such creepage and space distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.

Pollution Degree 2 Environment

Pollution Degree 2 corresponds to typical environments such as homes and offices where only dry, non-conductive contaminants are present. Pollution Degree is the grade of the environment that influences the determination of the spatial and creepage distances of components, classified from 1 to 4 according to the presence, amount, and condition of pollutants.

Kelvin Emitter Terminal

An emitter terminal dedicated to voltage measurement. By separating this from the emitter through which current flows, the effects of voltage drop during current flow can be minimized, allowing for fast, stable switching.

The post ROHM’s New 1200V IGBTs Achieve Industry-Leading Low Loss Characteristics with High Short-Circuit Tolerance appeared first on ELE Times.

• Collaboration aims to significantly enhance cost, energy efficiency, driver experience and vehicle range
• Companies signed supply and capacity reservations for PROFET power switches and silicon carbide (SiC) CoolSiC semiconductors

• Infineon’s scalable production capacity is ready to meet the market demand for automotive semiconductor solutions

Stellantis N.V. and Infineon Technologies AG announced that they will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.

To support this, the companies have signed major supply and capacity agreements that will serve as the foundation for the planned collaboration to develop the next generation of power architecture, including:

• Infineon’s PROFET smart power switches, which will replace traditional fuses, reduce wiring and enable Stellantis to become one of the first automakers to implement intelligent power network management.
• Silicon carbide (SiC) semiconductors, which will support Stellantis in its efforts to standardize its power modules, improve the performance and efficiency of EVs while also reducing costs.
• AURIX microcontrollers, which target the first generation of the STLA Brain zonal architecture.

Stellantis and Infineon are also in the process of extending their cooperation with the implementation of a Joint Power Lab to define the next-generation scalable and intelligent power architecture enabling Stellantis’ software-defined vehicle.

“As outlined in our strategic plan, Dare Forward 2030, we are securing the supply of crucial semiconductor solutions required to continue our transition to an electrified future leveraging innovative E/E architectures for our next-generation platforms,” said Maxime Picat, Stellantis Chief Purchasing and Supplier Quality Officer.

“Infineon is now entering a collaboration and innovation partnership with Stellantis,” said Peter Schiefer, President of Infineon’s Automotive Division. “As the world’s leading automotive semiconductor vendor, we bring our product-to-system expertise and dependable electronics to the table. Our semiconductors drive the decarbonization and digitalization of mobility. They increase the efficiency of cars and enable software-defined architectures that will significantly improve the user experience.”

With the world`s most cost-competitive SiC fab in Kulim, Malaysia, the upcoming 300-millimeter ”Smart Power Fab” in Dresden, Germany, and the joint venture with TSMC and partners (ESMC) as well as accompanying supply agreements with foundry partners, Infineon is ready to fully meet market demand for automotive semiconductor solutions. According to the market research company TechInsights, Infineon is the global number one supplier of automotive microcontrollers with a market share of about 29 percent of the global automotive microcontroller market.

The post Infineon and Stellantis Team Up to Advance Innovation in Power Conversion and Distribution for Next Generation of Vehicle Architectures appeared first on ELE Times.