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Securing EMI Resilience with Software-Driven Smart Electronic Fuses

Пн, 12/09/2024 - 09:05

By: Giusy Gambino, Sebastiano Grasso, and Filippo Scrimizzi STMicroelectronics

Integrated smart power devices are becoming increasingly crucial in automotive systems due to their ability to combine power management with advanced diagnostic and protection features. When a fault occurs, these features enable the connected control unit to react promptly and effectively, protecting both the vehicle and its occupants. Smart power devices are often responsible for critical tasks within a vehicle and are gradually replacing conventional components such as fuses and relays, and switches.

Electronic fuses, a prominent type of smart power device, are particularly remarkable for their reliability under harsh environmental conditions, including high operating temperatures and mechanical stress. Additionally, they have to withstand various forms of electromagnetic interference (EMI) that can affect their normal functionality. This is especially crucial in safety-critical applications like airbag control modules or Anti-lock Braking Systems (ABS), where precise operation is vital to avoid hazardous conditions and ensure functional safety.

Testing Procedure for EMI

To ensure the correct operation of electronic products, they need to be tested for electromagnetic emissions that may negatively affect nearby equipment. These emissions fall into two categories:

  • Conducted noise, which travels through supply or data/control cables.
  • Radiated noise, which propagates through free space.

CISPR 25 is the standard developed for vehicles and boats to protect on-board receivers from such emissions. It outlines both limits and methods of measurement for equipment on board.

Conducted emission limits typically cover a frequency range of 150 kHz to 200 MHz, although this range may extend down to 9 kHz. The limits are defined in terms of average, quasi-peak and peak values.

Peak detection retains the peak value of each harmonic in an emitted signal, indicating the worst-case scenario. Average detection provides the average amplitude of each signal component across its period. Quasi-peak detection weighs each component based on its repetition rate: the faster the repetition rate, the higher the weight given to that component.

The output response of the three detectors to two similar pulsed signals is shown in with the top one having a higher repetition rate.

Output response of average, peak and quasi-peak detectors.Output response of average, peak and quasi-peak detectors.

The above picture shows that the quasi-peak detector has a higher voltage output when the event occurs more frequently.

To determine the conformance of the Equipment Under Test (EUT) with the specified CISPR 25 limits, the following guidelines should be followed (Fig. 2).

Guidelines for conformance to CISPR 25 limits.Guidelines for conformance to CISPR 25 limits.

In all cases, the EUT should conform to the average limit. For frequencies where both peak and quasi-peak limits are defined, the EUT should conform to either the peak or the quasi-peak limits, as specified in the test plan. For frequencies where only peak limits are defined, the EUT must conform to the peak limit.

For CISPR 25, emission limits are divided into Class 1, 2, 3, 4, and 5 products, specifying how to measure the noise using peak, quasi-peak, and average detection methods (Tabs. 1 and 2).

Service/Band Frequency MHz Levels in dB (µV)
Class 1 Class 2 Class 3 Class 4 Class 5
Peak Peak Peak Peak Peak
BROADCAST
LW 0.15 – 0.30 110 100 90 80 70
MW 0.53 – 1.8 86 78 70 62 54
SW 5.9 – 6.2 77 71 65 59 53
FM 76 – 108 62 56 50 44 38
TV Band I 41 – 88 58 52 46 40 34
MOBILE SERVICES
CB 26 – 28 68 62 56 50 44
VHF 30 – 54 68 62 56 50 44
VHF 68 – 87 62 56 50 44 38
Tab. 1 Emission limits for the different classes with peak noise detection.
Service/Band Frequency MHz Levels in dB (µV)
Class 1 Class 2 Class 3 Class 4 Class 5
Average Average Average Average Average
BROADCAST
LW 0.15 – 0.30 90 80 70 60 50
MW 0.53 – 1.8 66 58 50 42 34
SW 5.9 – 6.2 57 51 45 39 33
FM 76 – 108 42 36 30 24 18
TV Band I 41 – 88 48 42 36 30 24
MOBILE SERVICES
CB 26 – 28 48 42 36 30 24
VHF 30 – 54 48 42 36 30 24
VHF 68 – 87 42 36 30 24 18
Tab. 2 Emission limits for the different classes with average noise detection.

LW stands for Long Waves

MW for Medium Waves

SW for Short Waves

TV Band I for TeleVision broadcast Band 1

CB for Citizens Band

VHF for Very High Frequencies.

The testing procedure ensures that both peak and average measurements are checked for compliance with Class 5 standards. If any measurements fail, the EUT is evaluated against a lower class.

Conducted Electromagnetic Emission

The conducted Electro-Magnetic Emission (EME) is the noise current generated by the EUT that propagates through the harness to other components/systems or power grid. This noise current can be measured using either the voltage method or the current method.

The voltage method is carried out with the measurement setup displayed in Fig. 3.

Fig. 3 Measurement setup for voltage method conducted EMEFig. 3 Measurement setup for voltage method conducted EME

where:

LISN stands for Line Impedance Stabilization Network.

Experimental Results

The experimental data have been collected for the STi2Fuse product VNF9Q20F, which is a 4-channel monolithic electronic fuse fully programmable through serial peripheral interface (SPI). This device embeds sophisticated digital protection and diagnostic mechanisms, which include a unique i2t feature for harness protection.

The following testing conditions have been considered:

  • VBAT = 13 V
  • TAMB = Room temperature
  • All channel in Fail Safe mode (off)
  • Channel 2 driven by direct input with DC (5 V) and PWM (100 Hz, 50% duty cycle) loaded with 27 W + 5 W bulbs.

When channel 2 is turned on and it is driven by direct input with 5 V DC voltage and a PWM signal with 100 Hz frequency and 50% duty cycle, the noise detector measurements for peak and average methods are shown in Fig. 5 and compared with CISPR 25 limit relevant to class 5.

Fig. 5 Comparison between noise measurement with channel 2 turned-on and CISPR25 limit for peak detection (on the left side) and average detection (on the right side).Fig. 5 Comparison between noise measurement with channel 2 turned-on and CISPR25 limit for peak detection (on the left side) and average detection (on the right side).

The electronic fuse VNF9Q20F is able to pass all the limits imposed by CISPR 25 for both peak and average limits in class 5.

Conclusions

The EMI behavior of a smart electronic STi2Fuse device has been investigated, demonstrating compliance with the CISPR 25 standard under class 5 specifications.

The STi2Fuse products are critical components in modern vehicles, providing overcurrent protection and ensuring the safe operation of electrical circuits. Compliance with the CISPR 25 standard, particularly under class 5 specifications, is essential for these devices to ensure they do not interfere with other components and equipment within the vehicle.

References

[1]   VNF9Q20F, 4 channel high-side driver with STi2Fuse protection for automotive power distribution applications.

[2] CISPR 25:2021 International Standard, Vehicles, boats and internal combustion engines – Radio disturbance characteristics – Limits and methods of measurement for the protection of on-board receivers, Edition 5.0, Dec. 2021.

[3] R. Letor, R. Crisafulli, Smart Power devices and new electronic fuses compliant with new E/E architecture for autonomous driving, AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 02-04 July 2019

The post Securing EMI Resilience with Software-Driven Smart Electronic Fuses appeared first on ELE Times.

Securing AI Models: Safeguarding the Future of Innovation

Птн, 12/06/2024 - 13:16

As artificial intelligence (AI) adoption accelerates, the urgency to protect AI ecosystems grows proportionally. In 2025, the world will witness a concentrated push to address critical concerns surrounding the security of Large Language Models (LLMs) and other advanced AI systems. These efforts will focus on safeguarding data confidentiality, ensuring integrity, and upholding privacy, which are essential to sustaining innovation and trust in AI technologies.

The Rise of AI and Its Risks

AI technologies, particularly LLMs, have revolutionized industries with their ability to process vast amounts of data, generate human-like text, and make intelligent predictions. However, their immense potential also introduces vulnerabilities. Cyber threats targeting AI systems are becoming more sophisticated, with adversaries exploiting weaknesses to steal intellectual property, manipulate outputs, or compromise sensitive data. For instance, adversarial attacks can subtly manipulate input data to mislead AI models, while data poisoning can corrupt training datasets, leading to flawed or biased predictions.

Additionally, as LLMs like ChatGPT or GPT-4 are deployed widely, the potential for misuse grows. These models, if not adequately safeguarded, could be manipulated to generate harmful content, leak proprietary information, or amplify misinformation. Thus, securing AI systems is no longer an afterthought; it is a fundamental requirement for ethical and reliable AI deployment.

Data Confidentiality and Privacy

Data confidentiality is at the heart of AI security. Training LLMs often requires enormous datasets, some of which may include sensitive or proprietary information. Ensuring that this data remains secure and private is a complex but crucial challenge. Robust encryption protocols, federated learning, and differential privacy techniques are emerging as key solutions. These methods enable AI systems to learn from data without exposing individual records, thereby reducing the risk of data breaches.

Federated learning, for example, allows models to train across decentralized devices without transferring data to a central repository. This approach not only enhances privacy but also minimizes attack vectors, as no single point of failure exists. Meanwhile, differential privacy adds statistical noise to datasets, protecting individual data points while preserving the overall utility of the model.

Ensuring Model Integrity

Model integrity is another critical focus area. Attackers may attempt to tamper with the parameters of an AI model to alter its behavior or introduce biases. To counteract this, organizations are turning to techniques like robust model architectures, regular audits, and tamper-evident mechanisms. Blockchain technology, for instance, is being explored to maintain immutable records of model versions, ensuring any unauthorized modifications are detectable.

Furthermore, explainable AI (XAI) is gaining traction as a means to enhance model transparency and trust. By making AI decision-making processes interpretable, XAI can help identify anomalies or unexpected behavior that might indicate tampering or misuse.

A Multi-Stakeholder Approach

Securing AI models requires collaboration across industries, governments, and academia. Policymakers must establish clear guidelines for AI governance and data protection, while researchers and developers work on advancing technical safeguards. Companies deploying AI systems must prioritize regular security assessments and adopt best practices for risk management.

Public awareness also plays a vital role in fostering responsible AI use. Educating users about potential threats and mitigation strategies can help minimize risks associated with AI adoption.

Conclusion

As we move into 2025, securing AI ecosystems will be a defining challenge for the tech industry. By addressing issues of confidentiality, integrity, and privacy, stakeholders can build robust AI systems that not only drive innovation but also inspire trust. The future of AI depends not only on its capabilities but also on the strength of the safeguards we put in place today.

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Delta to Provide Made-in-India High-efficiency Rectifiers to ThunderPlus for its Fast Chargers for Low Voltage 2W and 3W EVs

Птн, 12/06/2024 - 08:13

Delta Electronics India has announced the signing of an MOU with ThunderPlus, a leading two-wheeler (2W) and three-wheeler (3W) electric vehicle (EV) charging solutions provider. Under the aforementioned agreement, Delta will provide advanced high-efficiency 4kW rectifier modules, made at its new large manufacturing site in Krishnagiri, Tamil Nadu, to support ThunderPlus’ fast chargers for the low voltage market, specifically designed for 2W and 3W EVs.

Mr. Niranjan Nayak, Managing Director, Delta Electronics India, said, “Delta’s corporate mission is ‘To provide innovative, clean, and energy-efficient solutions for a better tomorrow’. Hence, our collaboration with Thunder Plus underscores Delta’s goal to contribute to India’s EV transition by delivering cutting-edge, locally manufactured solutions. Our fast-growing R&D capabilities in Bengaluru and manufacturing in Krishnagiri have been instrumental to this milestone.”

Ms. Manjula Girish, Business Head – EV Charging Infrastructure, Delta Electronics India, “Our 4kW rectifiers are a testament to Delta’s commitment to innovation and sustainability. Engineered with high energy efficiency of up to 93% and manufactured at our state-of-the-art Krishnagiri facility, these rectifiers exemplify the synergy between cutting-edge technology and localized manufacturing. ThunderPlus’ decision to integrate our rectifiers into their EV chargers highlights the trust in Delta’s capability to deliver superior performance and value. This partnership is a significant step toward enabling robust and energy-efficient charging solutions for India’s growing EV ecosystem.”

Mr. Rajeev YSR, CEO – Thunder Plus, highlighted, “This collaboration with Delta Electronics brings world-class technology to India’s low-voltage EV charging market. Our customizable chargers cater to the unique requirements of OEMs and end-users, ensuring efficient and seamless integration with their operations. Together, we are building the foundation for a robust and sustainable EV charging infrastructure in India.”

This endeavor brings together Delta’s technological expertise in power solutions and ThunderPlus’ market leadership in EV charging systems. The chargers, developed with Delta’s advanced 4kW rectifier modules featuring energy efficiency up to 93%, are customizable and designed to meet India’s diverse requirements, making them a game-changer for the local EV market.

India’s EV sector is witnessing unprecedented growth, with the adoption of 2W and 3W EVs driving much of the demand.  This Make in India chargers are tailored to the low-voltage segment under this partnership we aim to reduce charging downtime, alleviate range anxiety, and boost the productivity of EV users.

Thunder Plus, a leading provider of EV charging solutions in India, has already on-boarded OEMs in the 2W and 3W segments. These chargers are equipped with advanced co-branding opportunities, reflecting the synergy between both organizations. The partnership ensures that the chargers are developed to meet global standards while being tailored to the Indian market.

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Quantum sensors used to move prosthetics

Птн, 12/06/2024 - 07:41

Digitizers by Spectrum Instrumentation used to detect extremely small and fast nerve signals

For controlling prosthetics, the body’s signals must be detected to move the artificial limb. At the moment, implanting electrodes is the most common technique but this is invasive and electrodes can deteriorate or move position. A completely different approach is now developed by the multidisciplinary consortium QHMI in Stuttgart, Germany, using quantum sensors to detect the incredibly small and fast nerve signals. The ultrasensitive quantum magnetometers will be carried outside the body measuring the neural signals through the skin. At this stage, the scientists are using Spectrum Instrumentation’s ultrafast digitizers (M5i.3357) and Arbitrary Waveform Generators (M4x.6631) to characterize the signals and to finally design the required Application Specific Integrated Circuits (ASICs) and Photonic Integrated Circuits (PICs).

Pic 2: A test PCB with custom integrated circuits and the quantum sensors

Prof. Dr. Jens Anders of the University of Stuttgart, who is in charge of the project ‘Cluster4Future QSens’ and a leading scientist of the QHMI consortium, explained, “This is one of the first real-world applications for quantum sensor probes as there is no other way to non-invasively detect such tiny magnetic changes that are in the order of 10 to 100 picoTeslas for muscles: that is six orders of magnitude smaller than the Earth’s magnetic field. Our tests show that our sensors are sensitive enough that they can detect neural signals to muscles through the skin. Even a small amount of remaining, say, lower arm muscle can in principle be used for this. We are working on even greater sensitivity for the femtoTesla magnetic changes we need to measure to detect signals within the brain without breaking the skin.”

At the heart of this technology is an optically detected, magnetic resonance (ODMR) device made of a tiny slice of diamond. The diamond is doped with so-called nitrogen-vacancy centers (NV centers), which have a net electron spin and, therefore, behave like tiny bar magnets. When green laser light is shone on them, they produce a red fluorescence signal. By applying a suitable microwave magnetic field, this fluorescence signal is very sensitive to external magnetic fields, which can be used to measure neural signals with utmost precision.

Pic 3: Checking the ASICs on the test PCB with a microscope

The microwave magnetic fields required to control the NV center spins are generated using suitable coils driven by a microwave transmitter. The baseband signals for this transmitter are generated using an Arbitrary Waveform Generator (AWG) to provide the required phase and amplitude modulation of the carrier signal that make the excitation signal more robust against experimental nonidealities. The resulting fluorescence signals, which carry the information of the neural magnetic fields, is then captured by a photodiode, amplified, filtered and digitized for advanced signal processing.

Spectrum’s cards were chosen by the team for several reasons. First, they have an extremely high dynamic range and good noise performance which is vital for such tiny signals. Second, they are very fast, so they can capture the fast signals associated with advanced pulsed excitation schemes, which can require bandwidth beyond 100 MHz. Third, they offered a great value in terms of performance / price. And lastly, the five-year warranty provides peace of mind that a critical component of the research is good for five years as it is almost impossible to obtain funding to replace a failed piece of equipment.

The digitizer flagship M5i.3357 with 10 GS/s sampling rate and 12 bit resolution and the bestseller AWG M4x.6631 with 1.25 GS/s output rate and 16 bit resolution.

The quantum sensor probes are currently matchbox-sized and, in the future, will be around one cubic centimeter and go to a control box that is roughly the size of a large matchbox that houses the processing electronics and the battery. The aim is to use microelectronic and photonic integration to shrink the control box further and extend the battery life to give a day of use before recharging. It is hoped that prosthetics will start becoming available in three to four years.

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Ampere and STMicroelectronics collaborate on powerbox with long term supply for silicon carbide

Птн, 12/06/2024 - 07:07
  • Multi-year agreement between STMicroelectronics and Renault Group secures Ampere’s supply of Silicon Carbide power modules
  • Collaboration on powerbox and cooling systems for the inverter to get the best efficiency for Ampere’s new generation electric motors
  • Agreement aligned with Ampere’s strategy of working upstream with its partners to design the best solutions for each one of its EV technologies

Ampere, the intelligent electric EV pure player born from Renault Group and STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group on the supply of Silicon Carbide (SiC) power modules, as part of their collaboration on a powerbox for the inverter for Ampere’s ultra-efficient electric powertrain.  Ampere and STMicroelectronics worked together on the optimization of the power module, the key element in the powerbox, to get the highest performance and best competitiveness in the e-powertrain, leveraging Ampere’s expertise in EV technology and STMicroelectronics’ expertise in advanced power electronics.

“This agreement is the result of the intensive work carried out with STMicroelectronics. By working upstream together, we were able to optimize and secure the supply of key components for our electric powertrains, to offer high-performance EVs with increased range and optimized charging time. It perfectly aligns with Ampere’s strategy to master the entire value chain of power electronics for its e-powertrain, leveraging STMicroelectronics’ expertise in power modules,” said Philippe Brunet, SVP Powertrain & EV engineering, Ampere.

“ST is at the cutting edge of the development of advanced power electronics enabling the mobility industry to improve the performance of electrified platforms. With the optimization of these higher-efficient products and solutions to meet Ampere’s performance requirements, and our vertically integrated silicon carbide supply chain, we are supporting Ampere’s strategy for its next generation of electric powertrain,” said Michael Anfang, Executive Vice President Sales & Marketing, Europe, Middle East and Africa Region, STMicroelectronics. “ST and Ampere share a common vision for more sustainable mobility and this agreement marks another step forward in improved power performance to further contribute to concrete improvements to carbon emissions reduction by the mobility industry and its supply chain.”

Power modules, composed of numerous silicon carbide chips, manage and convert electrical power from the battery to drive the electric motor. They play a crucial role in the efficiency of the electric powertrain and battery range, as well as energy regeneration features, making them a key element of the efficiency of an electric car. They also contribute to the smoothness and responsiveness of driving.

STMicroelectronics and Ampere have collaborated on a powerbox for the supply of energy to Ampere’s new generation of electric motors. The powerbox is designed for optimum performance-size ratio across Ampere’s line-up, on 400 Volt battery EV vehicles, and for Segment C-EVs with 800 Volt batteries, enabling greater autonomy and faster charging. 800 Volts is one of the key levers to achieve the 10%-80% quick charge in 15 minutes or less. This agreement is fully aligned with Ampere’s strategy to master the entire value chain of the electric vehicle, particularly by working further upstream with its partners and ensuring the best efficiency at each step.

As an integrated device manufacturer (IDM), STMicroelectronics ensures quality and security of supply to serve carmakers’ strategies for electrification. The collaboration with Ampere on the silicon carbide power modules and powerbox demonstrates STMicroelectronics’ leadership and system-level experience of advanced power electronics, including its packaging expertise.

Additional Technical Information
The powerbox combines three SiC-based power modules, an excitation module, which provides the necessary electrical excitation to the motor or generator for controlling the magnetic field within the motor, and a cooling baseplate designed to dissipate heat from the back side of the power module, simplifying the thermal management and cooling process.

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Littelfuse Expands NanoT IP67-Rated Tactile Switch Series with New Top- and Side-Actuated Options

Чтв, 12/05/2024 - 14:13

Designed for next-gen smart wearables, wireless headsets, medical devices, and IoT applications

Littelfuse, Inc., a global leader in industrial technology solutions for a sustainable, connected, and safer world, has announced the expansion of its NanoT tactile switch product line. The series, featuring miniature, surface-mounted, waterproof tactile switches, now includes new operational force options and top- and side-actuated models, further enhancing its application in next-generation smart wearables, wireless headsets, portable medical devices, and IoT systems.

Design engineers require ever-smaller switch interfaces as the market demand for smaller, high-performance electronics grows—driven by innovations in healthcare, wearables, and battery-powered IoT devices. The expanded NanoT series is the smallest tactile switch solution on the market, providing design flexibility for engineers to integrate additional functionality or reduce printed circuit board (PCB) size. View the video.

Ideal applications Include:

  • Smart wearables
  • Health monitoring devices
  • Hearing aids
  • Wireless headsets
  • Portable IoT devices

“The NanoT switch combines space efficiency with high reliability, featuring short actuation travel, IP67-rated durability, and a wide operating temperature range from -40°C to 85°C,” said Junbao Chen, Design Centre Manager, Electronics Business Unit at Littelfuse. “Its ultra-compact size and ease of PCB/FPC integration make it ideal for confined spaces, while the haptic feedback ensures a satisfying user experience, optimizing designs and improving product quality.”

Key Benefits of the NanoT Series:

  • Space-saving design: Ultra-compact size allows designers to incorporate more functionality or reduce PCB size.
    • Side-actuated model (2.2 x 1.70 x 1.65 mm) saves 35% space.
    • Top-actuated model (2.1 x 1.65 x 0.55 mm) saves 20% space.
  • Customizable actuation forces: Available in 100, 160, and 240 gf options, catering to different application needs.
    • 100 gf: Ideal for high-frequency use, reducing user fatigue.
    • 160 gf: Balanced tactile feedback for general applications.
    • 240 gf: Firm activation
  • Mounting options: PIP or SMT edge-mount versions offer superior resistance to shock and shear, extending equipment life and reducing the need for extra protective layers.
  • Durability: Life cycles ranging from 200K to 300K ensure long-term reliability and reduce maintenance costs.
  • IP67 rating: Dust-tight and waterproof, ensuring reliability in challenging environments.

The expanded NanoT switch series delivers the performance, durability, and compact design required for today’s cutting-edge electronics.

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IO-Link actuator board from STMicroelectronics delivers turnkey reference design for industrial monitoring and appliances

Пн, 12/02/2024 - 11:02

ST has introduced an IO-Link reference design for industrial beacons and home-appliance alarms, delivered ready-to-use as a fully built board complete with protocol stack and application software.

The EVLIOL4LSV1 board leverages ST’s L6364Q dual-channel IO-Link transceiver to handle communications and the IPS4260L intelligent low-side power switch for driving the indicator lights. The board can be directly connected to signaling systems such as smart tower lights used in factory automation, funnel material alarms for quantity-remaining or urgency-level awareness, and other system warnings. It also provides a fast way to test the IPS4260L and L6364Q ICs and has a 4-pin M12 connector for an IO-LINK master and a 5-pin SWD connector for programming.

An STM32G071CB microcontroller, which hosts the ST proprietary IO-Link demo stack and the application software, handles system control and diagnostics, communicating with the transceiver and low-side switch.

The L6364Q transceiver is fully protected and supports standardized IO-Link communication speeds including 38.4kbit/s COM2 and 230.4kbit/s COM3. The transceiver can operate in single or multibyte mode, as well as in transparent mode delegating control of IO-Link communications to the microcontroller by a simple URT interface. The in-built protection ensures EMC immunity up to 2.5kVpk surge pulse/500Ω coupling without additional protection elements.

The IPS4260L low-side driver has four outputs for driving loads with one side connected to supply voltage, each individually controlled by a signal such as a digital microcontroller output. It has a wide operating-voltage range, from 8V to 50V, and the current for each output can be independently programmed from 0.5A to 3.0A. The IC integrates overload and overtemperature protection for each channel and provides open-load, overload, and overtemperature diagnostic signals to aid system management and enhance reliability. The reference design also features ST’s SMBJ30CA TVS (transient-voltage suppression) diode to withstand surge pulses with 2Ω coupling on the supply rail.

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New Motion Controller available for four different motor technologies.

Птн, 11/22/2024 - 11:23

A motion controller with even more possibilities: With the new MC 3602 B and MC 3606 B motion controllers, the selection and commissioning of drive systems is now even simpler. With the compact MC 3602/06 B, DC-motors, brushless DC-motors and linear motors can be operated with the typical position encoders as servo drive in accordance with CiA 402. Also new is the support of stepper motors with encoder as servo or without encoder in open-loop operation. The products “speak” EtherCAT, CANopen, RS232 and USB.

The new MC 3602 B variant is equipped with up to 2 A continuous output current for smaller motors and the MC 3606 B variant has up to 6 A continuous output current for medium-sized motors which simplifies work for engineers. For applications in which more than one motor technology is used, just one motor controller and a GUI are needed. The free FAULHABER “Motion Manager 7” software is available for installation and commissioning. With this, the drive is running in just a few steps. All main operating modes of the CiA 402 servo drive are offered. Integration is performed via CANopen or RS232, and for commissioning, primarily the USB interface is used. Additionally, an optional EtherCAT module enables cycle times as short as 1 ms. In conclusion, the motion controllers can also be operated without central control in stand-alone mode.

Everything from a single source

In combination with FAULHABER motors, the MC 3602 B and MC 3606 B deliver a sophisticated drive system with extensive protective functions. The products were developed for the operation of motors with ironless winding and offer high dynamics here. Standard motors – such as NEMA stepper motors – can likewise easily be operated with the MC 3602/06 B. They thereby represent a solid basis for a range of applications. Regardless of whether the application uses a stepper motor in open-loop or closed-loop operation, or in combination with brushless, linear or DC servomotors, the MC 3602/06 B provides a solution for nearly every requirement – in industrial automation or in laboratory automation, robotics, semiconductor processing or in use with measurement systems.

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NEOTech Significantly Improves Wire Bond Pull Test Process

Птн, 11/22/2024 - 11:09

NEOTech, a leading provider of electronic manufacturing services (EMS), design engineering, and supply chain solutions in the high-tech industrial, medical device, and aerospace/defense markets, proudly announces a major advancement in its wire bond pull testing process, reducing manufacturing cycle time by more than 60% while maintaining industry-leading production yields of over 99.99%. This improvement reflects NEOTech’s commitment to continuous process enhancement and operational excellence.

The wire bond pull test is a critical method used to assess the quality and integrity of wire bonds in microelectronics. Leveraging extensive historical data and its exceptional process yield rate, NEOTech’s manufacturing engineers developed a robust random sampling methodology that ensures testing efficiency without compromising quality. The new sampling plan has dramatically reduced average testing time from 2.5 hours per assembly to approximately 1 hour per assembly.

This innovative process is fully compliant with the stringent requirements of MIL-PRF-38534 and MIL-STD-883, ensuring that NEOTech meets the highest quality and reliability standards. The process has been implemented on mission-critical, high-frequency RF assemblies — products recognized in the industry as highly complex and challenging to manufacture. NEOTech’s success in achieving these advancements demonstrates its expertise in addressing the rigorous demands of such sophisticated microelectronics applications.

“Achieving greater than 99.99% production yields is a remarkable milestone,” said Daniel De Haro, General Manager of the NEOTech Chatsworth site. “But our team didn’t stop there. They went above and beyond to implement innovative sampling techniques and streamline testing processes to significantly improve production cycle times. I’m incredibly proud of our engineers, technicians, and manufacturing teams for their dedication to excellence and their commitment to setting new benchmarks in microelectronics manufacturing.”

The transition to a sample-based testing methodology was supported by enhanced data collection and analysis, as well as the development of comprehensive training procedures. These efforts ensured that the NEOTech team could maintain its exceptional yield rates while increasing throughput and efficiency for its customers’ microelectronics circuit assemblies.

At the core of NEOTech’s success is its customer-centric approach. Offering a comprehensive suite of services — from design and prototyping to full-scale production and post-production support — NEOTech tailors its solutions to meet each customer’s specific needs. The company’s ability to provide personalized solutions, while also reducing time-to-market and optimizing costs, has earned it a strong reputation for delivering exceptional value.

With more than 40 years of heritage in electronics manufacturing, NEOTech specializes in high-reliability programs in the aerospace/defense industry, medical products, and high-tech industrial markets. NEOTech is well recognized as a premier EMS provider with in-depth experience manufacturing high-tech products and managing stringent US government requirements. For more information about NEOTech’s Microelectronics manufacturing capabilities, please visit www.NEOTech.com/microelectronics.

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Dependable power distribution with eFuses: Infineon launches PROFET Wire Guard with integrated I²t wire protection

Чтв, 11/21/2024 - 13:06

Modern, decentralized, and zonal power distribution architectures require dependable solutions. With PROFET Wire Guard, Infineon Technologies AG provides developers with advanced wire protection for modern power distribution. Compared to conventional fuses, the product family can emulate the stress characteristics of the wires much more accurately with an integrated and precise I²t wire protection curve, which can be selected from six implemented curves depending on the application requirements. Combined with other features, the integrated I²t wire protection accuracy enables wire harness optimization when replacing mechanical relays and fuses.

The five PROFET Wire Guard devices come in the proven TSDSO-14 and TSDSO-24 packages. They offer full pin-to-pin compatibility within the family and high compatibility with PROFET +2 12V devices and are targeting currents of up to 27 A. To expand the current capabilities up to 36A, the product line-up will be further extended with an additional device coming in Q4 2025. The devices have a capacitive load switching (CLS) mode implemented to charge capacitive loads. An adjustable overcurrent detection threshold supports fast fault isolation from the power supply. The integrated automatic idle mode reduces current consumption during parking to typically 50 µA, while the output stage remains fully switched on. Built-in sequential diagnosis provides accurate application data across five addresses on a single pin, enabling application integrity testing for functional safety requirements and further wire harness optimization during facelifts based on the analysis of the wire protection status during vehicle operation. The devices have been developed and are released as ISO 26262:2018 Safety Element out of context for safety requirements up to ASIL D.

To support the design-in process, the product family is integrated into the Infineon Automotive Power Explorer, which is available in the Infineon Developer Center. This simulation tool supports, for example, the evaluation of the system protection capability of PROFET Wire Guard devices with a given wire and load profile. It also calculates the correct resistance values for the adjustable overcurrent detection threshold as well as the selection of the integrated I²t wire protection curves. The tool is also capable to calculate parameters like kILIS accuracy or power dissipation for the whole product family.

The post Dependable power distribution with eFuses: Infineon launches PROFET Wire Guard with integrated I²t wire protection appeared first on ELE Times.

Enhanced performance: Panasonic Industry releases advanced OS-CON high-voltage capacitor line extension

Чтв, 11/21/2024 - 08:48

New SXV, SXE, and SVPG series deliver superior durability, low ESR, high ripple current, and increased capacitance, setting a new standard for industrial power supply applications.

Panasonic Industry Europe announces the expansion of its renowned OS-CON aluminum polymer solid capacitors, introducing the latest members of the product lineup: the SXV, SXE, and SVPG series. These new capacitor families are designed for surface mount and radial lead applications, offering remarkable performance improvements that meet the evolving needs of industrial applications.

SXV and SXE Series: Enhanced Performance for High-Density Mounting

The OS-CON SXV (surface mount type) and SXE (radial lead type) series capacitors are engineered to deliver superior durability and efficiency, featuring remarkable equivalent series resistance (ESR) even at low temperatures. Both series boast a high-temperature endurance of 1,000 hours at 125°C and operate within a wide voltage range of 63V to 100V. With enhancements to the aluminum foil, these capacitors offer a capacitance increase of up to 20% compared to competitors in the conductive polymer aluminum solid capacitor category. This advancement enables improved functionality and miniaturization, making them ideal for high-density mounting in power supplies, solar inverters, measuring machines, servers, and base stations.

SVPG Series: Reliability and Low ESR for High Ripple Current Applications

Complementing the SXV and SXE series, the OS-CON SVPG series introduces a line extension available in 20V and 25V ratings, designed for long life with an endurance of 5,000 hours at 105°C. With the extended voltage range, it is an ideal capacitor for smoothing 12-15V power lines that require high ripple current. The SVPG series is specifically formulated to provide low ESR and high ripple current handling, achieving an average ripple current increase of 1.37 times compared to competitors. This makes the SVPG series an excellent choice for power supply circuits that require reliability under high ripple conditions.

The SVPG series is suitable for a variety of demanding applications, including industrial power supplies, AI accelerators, industrial automation, and data centers.

All new capacitors in the OS-CON lineup are halogen-free and RoHS compliant, ensuring they meet the highest standards for safety and environmental responsibility.

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Infineon and Quantinuum announce partnership to accelerate quantum computing towards meaningful real-world applications

Чтв, 11/21/2024 - 08:29
  • Companies aim at developing powerful ion traps for Quantinuum’s future generations of quantum computers.
  • Infineon provides expertise in process development, fabrication, and quantum processing unit (QPU) technology
  • Partnership to drive progress in fields such as generative chemistry, material science, and artificial intelligence.

Infineon Technologies AG, a global leader in semiconductor solutions, and Quantinuum, a global leader in integrated, full-stack quantum computing, have announced a strategic partnership to develop the future generation of ion traps. This partnership will drive the acceleration of quantum computing and enable progress in fields such as generative chemistry, material science, and artificial intelligence.

“We are thrilled to partner with Quantinuum, a leader in quantum computing, to push the boundaries of quantum computing and generate larger, more powerful machines that solve meaningful real-life problems,” said Richard Kuncic, Senior Vice President and General Manager Power Systems at Infineon Technologies. “This collaboration brings together Infineon’s state-of-the-art knowledge in process development, fabrication, and quantum processing unit (QPU) technology with Quantinuum’s cutting-edge ion-trap design expertise and experience with operating high-performance commercial quantum computers.”

Infineon innovates with a dedicated team to make their trapped-ion quantum processing units (QPUs) the heart of the leading quantum computers. The company has invested in this field since 2017, applying its expertise in high-volume processing technologies and developing technologies, like integrated photonics and control electronics, to enable their partners to scale the qubit count of their machines.

In Quantinuum’s hardware approach, charged atoms are trapped with electromagnetic fields so they can be manipulated and encoded with information using microwave signals and lasers. This design has distinct advantages over other quantum hardware, including higher fidelities and longer coherence times.

This collaboration builds on today’s leading performance of Quantinuum’s trapped-ion quantum computers, which currently hold the world records in key performance benchmarks such as 2-qubit gate fidelity, quantum volume and cross-entropy benchmark fidelity. To deliver even better fidelity at greater scale and achieve commercial advantage, larger and more sophisticated ion traps are needed. Engineers from the two companies have been working together for more than a year and will intensify their efforts under the current partnership to develop powerful ion traps for Quantinuum’s next-generation quantum computers.

“At Quantinuum, our mission is to accelerate useful quantum computing. We have announced a roadmap to reach universal fault-tolerance in 2029. Our partnership with Infineon is key to our delivering on this commitment,“ said Dr. Rajeeb Hazra, President and CEO of Quantinuum.

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Texas Instruments presents automotive technology expertise and innovations at India Automotive Seminar 2024

Чтв, 11/21/2024 - 08:22

Texas Instruments (TI) has announced its India Automotive Seminar 2024, where automotive designers will learn about the latest innovations and emerging automotive trends. At the seminar, taking place on November 19 in Pune and November 22 in Bangalore, attendees will meet with TI experts in sessions on how to use TI’s innovative technology to address critical areas in automotive applications, such as battery management system (BMS), car access and infotainment.

“To address ever-evolving challenges, automakers are looking to semiconductor advancements from reliable suppliers,” said Elizabeth Jansen, sales director, Texas Instruments India. “In areas such as intelligent EV powertrains and software-defined vehicles, the insights and technologies at TI’s India Automotive Seminar will help drive automotive forward alongside automakers. We’re building reliable, cost-efficient, and intelligent technologies that are at the core of safer and smarter vehicles.”

In addition to educational sessions, attendees will see live demonstrations of TI’s analog and embedded processing portfolio and design resources enabling hybrid and electric powertrain systems, body electronics and lighting solutions, and infotainment and cluster solutions.

Demonstrations at India Automotive Seminar 2024

  • Vehicle electrification: For manufacturers who are developing smarter, safer electric vehicle (EV) systems, TI will showcase devices that help meet functional safety standards in BMS and smarter EV powertrains.

o   48V BMS reference design: Advanced BMS helps overcome some of the most critical barriers to widespread adoption: driving range, safety, performance, reliability, and cost.

o   Traction inverter 5KW: Advances in traction inverters, enabled by TI’s microcontrollers with real-time control capabilities and isolated gate drivers, are pushing expectations of EV performance even further. Better switching speeds lead directly to improvements in reliability, performance, weight, and power density.

o   New TI programmable logic device portfolio: Programmable logic devices can integrate up to 40 combinational and sequential logic and analog functions into one chip, reducing board size as much as 94% — and lowering system costs — compared to discrete logic implementations.

  • Body electronics and lighting: TI’s products address common challenges such as load driving, condition diagnostics, and fault detection and optimize automotive light-emitting diode (LED) lighting systems. Designers can use TI reference designs to quickly develop door locks; window lifts; seat heaters; heating, ventilation and air conditioning lamps; and more.

o   Radar kick-to-open demo: Demonstration of TI mmWave radar sensors which enable automakers to integrate more sensing into any level of vehicle, helping to make automobiles safer.

o   OPT4001-Q1 light-to-digital sensor: Designed for systems that require light-level detection to enhance user experience, this sensor often can be used to replace low-accuracy photodiodes, photoresistors and other ambient light sensors to improve human eye matching and near-infrared rejection.

  • Infotainment and cluster: TI’s broad analog and embedded processing portfolio enables applications such as car audio, navigation systems, power supplies, as well as in-car and personal entertainment.

o   Bulk acoustic wave (BAW) oscillators: The industry’s first BAW-based fixed-frequency oscillator offers jitter performance lower than 100fs, stability across 10 years of aging and vibration, and low current consumption in industry-standard packages.

o   Dynamic ground projection with DLP® technology: Enable dynamic content to be displayed anywhere around the vehicle with DLP3021-Q1 and DLP2021-Q1 digital micromirror devices. These DLP products are automotive-qualified, compact and reprogrammable, enabling a system that can display an infinite number of full-color images and videos for vehicle personalization, customization and styling.

o   Ultrasonic lens cleaning: TI’s ultrasonic lens cleaning chipset automatically detects when there is an obstruction on the lens and activates a cleaning cycle to remove contaminants — reducing the need for human intervention and maintenance, even in complex integrated systems.

o   Digital cluster: The entry-level automotive-grade AM62 Arm®-based processors address automotive applications like driver monitoring systems and entry-level digital clusters.

o   Front Camera: AM62 processors are built for a set of cost-sensitive automotive applications including driver and in-cabin monitoring systems, and the next generation of eMirror systems.

The post Texas Instruments presents automotive technology expertise and innovations at India Automotive Seminar 2024 appeared first on ELE Times.

Keysight Introduces Electronic Design Automation Software Suite Amplifying Designer Productivity with AI

Чтв, 11/21/2024 - 08:17
  • Reduces Radio Frequency (RF) device modeling time from days to hours
  • Automated Python workflows streamline design processes
  • Accelerates predictive design of chiplet interconnects

Keysight Technologies, Inc. has introduced its new Electronic Design Automation (EDA) software portfolio to transform how engineers address the demands of next-generation technologies. As the electronics industry races to develop advanced solutions for 5G/6G and data center applications, Keysight’s suite of EDA tools leverages AI, machine learning (ML), and Python integrations to dramatically reduce design time for complex RF and chiplet products.

Keysight’s EDA 2025 software addresses critical challenges in the development lifecycle by enhancing data manipulation, integration, and control of best-in-class simulators, allowing engineers to build efficient workflows seamlessly across multiple tools. AI-enhanced workflows and high-performance computing further reduce the time-to-insight, enabling engineers to move from simulation to verification and compliance with greater confidence. For simulating fast digital interconnects, the software is equipped with end-to-end component models and measurements that conform to digital standards, providing an efficient and high-accuracy digital twin for complex digital electronic design challenges.

Core benefits of the EDA 2025 software portfolio include: 

  • RF Circuit Design: Accelerate RF design cycles through open, automatable workflows featuring Python integration and multi-domain simulation. Additionally, the Python toolkit enables engineers to quickly consolidate measured load pull data from various files and formats into a single, cohesive dataset to train fast AI/ML models.
  • High-speed Digital Design: Create precise digital twins for complex standard-specific SerDes designs, including Universal Chiplet Interconnect Express  (UCIe) chiplets, memory, USB, and PCIe, with the Advanced Design System (ADS) 2025 release.
  • Device Modeling and Characterization: Reduce model re-centring time by 10X through AI/ML capabilities in the IC-CAP 2025 release, while Python integrations streamline and automate the modelling process.

Nilesh Kamdar, EDA Design & Verification General Manager at Keysight, said, “AI is transforming how engineers approach complex design challenges. Automating traditionally time-intensive tasks enables engineers to focus on innovation rather than repetitive refinements, resulting in real productivity gains. The foundation for the practical application of AI and ML is first having an open, interoperable workflow and then providing turn-key solutions tuned for specific applications. It’s a fascinating time, and AI and ML will undoubtedly be a huge driver of design innovation in the future.”

Stephen Slater, Director of Product Management at Keysight, said, “With this release, engineers can easily import data from measurements or swept simulations to train neural network models, which then execute very quickly in subsequent simulations. This unlocks new possibilities for abstracting and co-optimizing large parts of the RF design together, dramatically accelerating the development process.”

The post Keysight Introduces Electronic Design Automation Software Suite Amplifying Designer Productivity with AI appeared first on ELE Times.

Renesas Introduces Industry’s First Complete Memory Interface Chipset Solutions for Second-Generation DDR5 Server MRDIMMs

Чтв, 11/21/2024 - 08:07

New Multiplexed Registered Clock Driver, Multiplexed Data Buffer and PMIC Enable Next-Generation MRDIMM Speeds up to 12,800 Mega Transfers per Second for AI and High-Performance Compute Applications

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, has announced that it has delivered the industry’s first complete memory interface chipset solutions for the second-generation DDR5 Multi-Capacity Rank Dual In-Line Memory Modules (MRDIMMs).
The new DDR5 MRDIMMs are needed to keep pace with the ever-increasing memory bandwidth demands of Artificial Intelligence (AI), High-Performance Compute (HPC) and other data center applications. They deliver operating speeds up to 12,800 Mega Transfers Per Second (MT/s), a 1.35x improvement in memory bandwidth over first-generation solutions. Renesas has been instrumental in the design, development and deployment of the new MRDIMMs, collaborating with industry leaders including CPU and memory providers, along with end customers.
Renesas has designed and executed three new critical components: the RRG50120 second-generation Multiplexed Registered Clock Driver (MRCD), the RRG51020 second-generation Multiplexed Data Buffer (MDB), and the RRG53220 second-generation Power Management Integrated Circuit (PMIC). Renesas also offers temperature sensor (TS), and serial presence detect (SPD) hub solutions in mass production, making it the only memory interface company that offers the complete chipset solutions for industry standard next-generation MRDIMMs as well as all other server and client DIMMs.
“The demand for higher performance systems driven by AI and HPC applications is relentless,” said Davin Lee, Senior Vice President and General Manager of Analog & Connectivity and Embedded Processing. “Renesas is at the forefront of this trend, working with industry leaders to develop next-generation technology and specifications. These companies depend on Renesas to deliver the technical know-how and the production capabilities they require to meet unprecedented demand. Our latest chipset solutions for second-generation DDR5 MRDIMMs showcase our leadership in this market.”
Renesas’ RRG50120 second-generation MRCD is used on the MRDIMMs to buffer the Command/Address (CA) bus, chip selects and the clocks between the host controller and DRAMs. It consumes 45% less power compared to the first-generation device, a critical specification for heat management in very high-speed systems. The RRG51020 Gen2 MDB is the other key device used in the MRDIMMs to buffer data from the host CPU to DRAMs. Both the new Renesas MRCD and MDB support speeds up to 12.8 Gigabytes per Second (GB/s). Additionally, Renesas’ RRG53220 next-generation PMIC offers best-in-class electrical-over-stress protection and superior power efficiency and is optimized for high-current and low-voltage operation.

The post Renesas Introduces Industry’s First Complete Memory Interface Chipset Solutions for Second-Generation DDR5 Server MRDIMMs appeared first on ELE Times.

Driving the Future of Electric Mobility and Industrial Efficiency: Insights into STMicroelectronics’ 4th Generation SiC MOSFET Technology

Чтв, 11/21/2024 - 07:50

STMicroelectronics has introduced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, delivering breakthroughs in power efficiency, density, and robustness for automotive and industrial applications. Designed to optimize EV traction inverters, the technology enhances energy efficiency and performance in both 400V and 800V platforms, driving the adoption of more affordable and sustainable electric vehicles. Additionally, it addresses critical needs in renewable energy, industrial motor drives, and data centers, reflecting ST’s commitment to advancing electric mobility and industrial efficiency through innovation and a vertically integrated manufacturing strategy.

Gianfranco Dimarco, Chief of Staff and Marketing Communication Manager Power & Discrete at STMicroelectronics

 

Rashi Bajpai, Sub-Editor at ELE Times, engaged with Gianfranco Dimarco, Chief of Staff and Marketing Communication Manager Power & Discrete at STMicroelectronics, to explore emerging SiC MOSFET technology.

 

 

 

 

ELE Times: What are the key advantages of the new 750V and 1200V SiC MOSFET devices for mid-size and compact EVs, and how will they contribute to making electric vehicles more affordable and accessible?

Gianfranco Dimarco:  STMicroelectronics’ new 750V and 1200V SiC MOSFET devices offer significant advancements for mid-size and compact electric vehicles, enhancing efficiency, reducing size and weight, increasing range, and enabling faster charging. The improved efficiency stems from SiC MOSFETs’ ability to minimize switching losses, significantly reducing energy waste during driving. Additionally, the compact and lightweight design of these components optimizes space utilization, boosting vehicle performance and extending the distance covered on a single charge. Their higher power capacity also facilitates faster charging, making electric vehicles more practical for daily use. Together, these innovations lower production costs, accelerating the adoption of green technologies in the automotive industry.

ELE Times: Beyond EV traction inverters, how does the Generation 4 SiC technology enhance the performance of high-power industrial applications, such as solar inverters, energy storage systems, and data center power supply units?

Gianfranco Dimarco: STMicroelectronics’ Generation 4 SiC technology not only advances EV traction inverters but also plays a crucial role in enhancing high-power industrial applications like solar inverters, energy storage systems, and data center power supply units. Solar inverters benefit from increased efficiency and higher power density, resulting in better energy conversion and more reliable solar power systems.

Energy storage systems also leverage SiC devices for greater durability and efficiency, making them ideal for long-term use, particularly in grid balancing and hybrid power systems with renewables. In data centers, SiC technology ensures stable, efficient power delivery, preventing disruptions in critical operations. These advancements underscore the growing importance of SiC technology in modern high-power industrial applications, significantly improving both efficiency and reliability across various sectors.

ELE Times: With STMicroelectronics’ vertically integrated manufacturing strategy, how does the company plan to ensure a resilient supply chain for SiC components to meet growing global demand, especially for automotive and industrial markets?

Gianfranco Dimarco:  STMicroelectronics ensures a resilient supply chain for SiC components through its vertically integrated manufacturing strategy. The company is investing in facilities like the Silicon Carbide Campus in Catania, a fully vertically integrated SiC substrate manufacturing facility, which is expected to start production in 2026. This approach allows STMicroelectronics to control the entire production process, from raw materials to finished components, ensuring consistent quality and supply. Additionally, strategic investments to start the migration from 150mm to 200mm for SiC, further enhance manufacturing efficiencies and scalability. By vertically integrating and expanding its manufacturing footprint, STMicroelectronics is well-positioned to meet the growing global demand for SiC components, especially in the automotive and industrial markets.

ELE Times: Can you provide specific performance metrics or benchmarks that demonstrate the improvements in efficiency, power density, and robustness of the Generation 4 SiC MOSFETs compared to previous generations or silicon-based alternatives?

Gianfranco Dimarco: The 4th generation SiC MOSFETs feature several key advancements over the previous generation:

  • Faster Switching Speeds: this results in lower switching losses, which is crucial for high-frequency applications, enabling more compact and efficient power converters.
  • Lower On-Resistance (RDS(on)): significantly reduced on-resistance minimizes conduction losses and enhances overall system efficiency.
  • Enhanced Robustness: improved performance in Dynamic Reverse Bias (DRB) conditions, exceeding the AQG324 automotive standard, ensuring reliable operation under harsh conditions.
  • Smaller Die Size: the average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an RDS(on) at 25 degrees Celsius. This allows for more compact power converter designs, saving valuable space and reducing system costs.

ELE Times: How does STMicroelectronics’ vertically integrated manufacturing strategy contribute to its sustainability goals, and what specific initiatives are in place to ensure environmentally friendly production processes for these new SiC devices?

Gianfranco Dimarco:  Through our vertically integrated manufacturing strategy we maintain full control over the entire production chain, from raw materials to finished products, and all initiatives are aligned with our sustainability strategy and our sustainable manufacturing commitment, in terms of energy consumption and greenhouse gas emissions, air, and water quality.

All these initiatives. ST Sustainability Report 2024

ELE Times: What can you share about the timeline and expected features of the forthcoming fifth-generation SiC power devices? How does the planned radical innovation differ from current technologies in terms of performance and application?

Gianfranco Dimarco:  The main goals for the 5th generation of SiC MOSFET include achieving higher power density, further reducing on-resistance (RDS(on)), and improving thermal performance. These advancements aim to meet the increasing demands of high-power applications in automotive, industrial, and renewable energy sectors. We will share more details on Gen5 and the planned radical new technology at the appropriate time.

ELE Times: Which leading EV manufacturers are currently collaborating with STMicroelectronics to implement the Generation 4 SiC technology into their vehicles, and what feedback have they provided regarding the anticipated performance improvements?

Gianfranco Dimarco:  Leading EV manufacturers and Tier 1s are engaged with ST to integrate Generation 4 SiC technology into their vehicles and powertrain solutions. We will share more details on our customers at the appropriate time.

The post Driving the Future of Electric Mobility and Industrial Efficiency: Insights into STMicroelectronics’ 4th Generation SiC MOSFET Technology appeared first on ELE Times.

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